CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications Central Semiconductor Corp. wr DPAK THYRISTOR CASE MAXIMUM RATINGS: (Tc=25C unless otherwise noted) csD csD SYMBOL -8M -8N Peak Repetitive Off-State Voltage VprRM, VRRM 600 800 RMS On-State Current (Tc =90C) (RMS) 8.0 Peak One Cycle Surge (t=10ms) ltTsm 70 |2t Value for Fusing (t=10ms) [t 24 Peak Gate Power (tp=10us) Pom 40 Average Gate Power Dissipation Pe (AV) 1.0 Peak Forward Gate Current (tp=10us) lEFGM 4.0 Peak Forward Gate Voltage (tp=10us) VEGM 16 Peak Reverse Gate Voltage (tp=10us) VRGM 5.0 Critical Rate of Rise of On-State Current di/dt 50 Storage Temperature Tstg -40 to +150 Junction Temperature Wy -40 to +125 ELECTRICAL CHARACTERISTICS: (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IpRM, RRM Rated Voru, YRRM 10 IDRM, RRM Rated Vprmu: VRRM, To=125C 2.0 lot Vp=12V, R, =102 3.0 15 ly I7=100mA 3 20 Vet Vp=12V, R_=102 0.9 1.5 VIM I7)=16A, tp=380ps 3 1.8 dv/dt Vp=2/3 Vpro, Te=125C 200 124 and control systems. MARKING CODE: FULL PART NUMBER R1 (24-September 2004) NIT: <b eB ee A/us cc UNITS A mA mA mA ViusCentral CSD-8M Semiconductor Corp. CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE an ee es a ee es ee port cccc mos See oe Tb LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER DPAK THYRISTOR (REV: RO) R1 (24-September 2004) 125