AP2608GY RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic S D Lower Gate Charge D Small Footprint & Low Profile Package G BVDSS 150V RDS(ON) 2.6 ID 0.57A D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The S0T-26 package is widely used for commercial-industrial surface mount applications. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 150 V +20 V 3 0.57 A 3 0.45 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 2 A PD@TA=25 Total Power Dissipation 2 W Linear Derating Factor 0.016 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 /W 1 201005033 AP2608GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 150 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=0.5A - - 2.6 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=0.6A - 0.6 - S IDSS Drain-Source Leakage Current VDS=150V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=70 C) VDS=120V ,VGS=0V - - 100 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=0.5A - 3 4.8 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=120V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.7 - nC VDS=75V - 7.4 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=0.5A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 58 - ns tf Fall Time RD=150 - 26 - ns Ciss Input Capacitance VGS=0V - 80 130 pF Coss Output Capacitance VDS=25V - 17 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3.7 - pF Min. Typ. IS=1.3A, VGS=0V - - 1.5 V IS=1A, VGS=0V, - 57 - ns dI/dt=100A/s - 120 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board t 10S ; 156/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2608GY 1.6 2.4 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 2 1.6 1.2 V G =3.0V 0.8 10V 7.0V 5.0V 4.5V o T A =150 C ID , Drain Current (A) T A =25 o C 1.2 V G =3.0V 0.8 0.4 0.4 0 0 0 4 8 12 0 16 4 8 12 16 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 1.2 I D =0.5A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 2.0 1.1 1 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 150 -50 T j , Junction Temperature ( o C) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 3 1.6 Normalized VGS(th)(V) 2.5 IS(A) 2 T j =150 o C 1.5 T j =25 o C 1 1.2 0.8 0.5 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Normalized Gate Threshold Voltage v.s. Junction Temperature 3 AP2608GY f=1.0MHz 12 100 8 I D =0.5A V DS =120V C (pF) VGS , Gate to Source Voltage (V) C iss 10 6 C oss 10 4 C rss 2 1 0 0 1 2 3 1 4 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 10 Normalized Thermal Response (Rthja) 1 100us Operation in this area limited by RDS(ON) 1 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1ms 0.1 10ms 100ms 1s DC 0.01 o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 156/W 0.001 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4