Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Fast Switching Characteristic BVDSS 150V
▼ Lower Gate Charge RDS(ON) 2.6Ω
▼ Small Footprint & Low Profile Package ID0.57A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃ W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient362.5 ℃/W
Data and specifications subject to change without notice
201005033
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 2
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.016
Continuous Drain Current3, VGS @ 10V 0.45
Pulsed Drain Current12
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 0.57
Parameter Rating
Drain-Source Voltage 150
1
AP2608GY
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
DD
DDG
S
SOT-26
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 150 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=0.5A - - 2.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=0.6A - 0.6 - S
IDSS Drain-Source Leakage Current VDS=150V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=70oC) VDS=120V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=0.5A - 3 4.8 nC
Qgs Gate-Source Charge VDS=120V - 0.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.7 - nC
td(on) Turn-on Delay Time2VDS=75V - 7.4 - ns
trRise Time ID=0.5A - 6.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 58 - ns
tfFall Time RD=150Ω-26-ns
Ciss Input Capacitance VGS=0V - 80 130 pF
Coss Output Capacitance VDS=25V - 17 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 3.7 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.3A, VGS=0V - - 1.5 V
trr Reverse Recovery Time2IS=1A, VGS=0V, - 57 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 120 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board t ≦ 10S ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2608GY
AP2608GY
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Normalized Gate Threshold
Reverse Diode Voltage v.s. Junction Temperature
3
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized VGS(th)(V)
0
0.4
0.8
1.2
1.6
2
2.4
0481216
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
5.0V
4.5V
VG=3.0V
TA=25oC
0
0.4
0.8
1.2
1.6
0 4 8 12 16
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=0.5A
VG=10V
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
AP2608GY
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS QGD
QG
Charge
1
10
100
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃/W
tT
0
2
4
6
8
10
12
01234
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =120V
ID=0.5A
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
1s
DC
TA=25oC
Single Pulse
td(on) trtd(off)tf
VDS
VGS
10%
90%
0.02
Operation in this
area limited by
RDS(ON)
