The mark shows major revised points.
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC2766GR/GS
WIDE BAND IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER
Document No. P10193EJ4V0DS00 (4th edition)
Date Published October 1999 N CP(K)
Printed in Japan
DESCRIPTION
The
µ
PC2766GR/GS is a Silicon monolithic IC designed for use as IQ demodulator in wide dynamic range
compressed video or spread spectrum receivers. This IC consists of a wide band RF amplifier, gain control amplifier,
dual balanced mixers (DBM), Lo buffers, and I & Q output buffer amplifiers.
The package is 20 pin SSOP (shrink small outline package:
µ
PC2766GR) or 20 pin SOP (
µ
PC2766GS) suitable
for high-density surface mount.
FEATURES
• Broadband operation RF & LO up to 1 000 MHz
IF (IQ) up to 200 MHz
• Wideband IQ phase and amplitude balance Amplitude balance ±0.3 dB (TYP.)
Phase balance ±0.3 degree (TYP.)
• AGC dynamic range 45 dB
• Low distortion; IM330 dBc
• Supply Voltage 5 V
• Packaged in 20 pin SSOP or 20 pin SOP suitable for high-density surface mount
ORDERING INFORMATION
PART NUMBER PACKAGE PACKAGE STYLE
µ
PC2766GR-E1 20 pin plastic SSOP (225 mil) Embossed tape 12 mm wide. 2.5 k/REEL
Pin 1 indicates pull-out direction of tape
µ
PC2766GS-E1 20 pin plastic SOP (300 mil) Embossed tape 24 mm wide. 2.5 k/REEL
Pin 1 indicates pull-out direction of tape
Caution electro-static sensitive device
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
©
1995, 1999
DATA SHEET
µ
PC2766GR/GS
2Data Sheet P10193EJ4V0DS00
INTERNAL BLOCK DIAGRAM
20 19 18 17 16 15 14 13 12 11
I-IF Amp.
I-MIX.
I-Lo.Buff.Amp I-Lo.Buff.Amp
I-IF Amp.
Q-MIX.
RF AGC
RF Pre.Amp AGC cont.
12345678910
I trim Vcc
IF. I Vcc
RF GND
RF RF in RF in GND
RF Vagc Vcc
IF. Q Q trim
I out I out GND
IF. I Lo I Lo I Lo Q Lo Q GND
IF. Q Q out Q out
3
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
PIN FUNCTIONS
PIN No. PIN NAME
PIN VOLTAGE
FUNCTION AND EXPLANATION EQUIVALENT CIRCUIT
TYP. (V)
1 I Trim 4.2 Trimming pin for I-IF output.
2VCCIF I 5.0 Power supply pin for I-MIXER.
3VCCRF 5.0 Power supply pin for RF and AGC
block.
4 GND RF 0.0 Ground pin of RF and AGC block.
5 RFin 2.6 RF input pin. In case of single input,
6 pin should be grounded through
capacitor.
6 RFin 2.6
7 GND RF 0.0 Ground pin of RF and AGC block.
8VAGC 0 to 5 Gain control pin.
• VAGC = 0 V: Full gain
• VAGC = 5 V: Maximum reduction
9VCCIF Q 5.0 Power supply pin for Q-MIXER.
10 Q Trim 4.2 Trimming pin for Q-IF output.
1
VCC
56
To next
block
8
V
CC
V
CC
10
µ
PC2766GR/GS
4Data Sheet P10193EJ4V0DS00
PIN No. PIN NAME
PIN VOLTAGE
FUNCTION AND EXPLANATION EQUIVALENT CIRCUIT
TYP. (V)
11 Qout 3.3 Q-IF output pin. 11 pin and 12 pin
are balance outputs.
12 Qout 3.3
13 GNDIF Q 0.0 Ground pin of Q-IF block.
14 Lo Q 2.2 Oscillator signal input pin of
Q-MIXER. In case of single input,
15 pin should be grounded through
capacitor.
15 Lo Q 2.2
16 Lo I 2.2 Oscillator signal input pin of
I-MIXER. In case of single input,
16 pin should be grounded through
capacitor.
17 Lo I 2.2
18 GNDIF I 0.0 Ground pin of I-IF block.
19 Iout 3.3 I-IF output pin. 19 pin and 20 pin
are balance outputs.
20 Iout 3.3
12
+_
From
before
block
11
V
CC
1514
VCC
17 16
V
CC
19 20
+_
From
before
block
V
CC
5
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
µ
PC2766GR
PARAMETER SYMBOL RATING UNIT TEST CONDITIONS
Supply voltage VCC 6.0 V
Power dissipation PD430 mW TA = 85 °CNote 1
Operating temperature range TA–40 to +85 °C
Storage temperature range Tstg –55 to +150 °C
µ
PC2766GS
PARAMETER SYMBOL RATING UNIT TEST CONDITIONS
Supply voltage VCC 6.0 V
Power dissipation PD650 mW TA = 85 °CNote 1
Operating temperature range TA–40 to +85 °C
Storage temperature range Tstg –55 to +150 °C
Note 1 Mounted on 50 × 50 × 1.6 mm double epoxy glass board.
RECOMMENDED OPERATING RANGE
µ
PC2766GR/GS
PARAMETER SYMBOL MAX. TYP. MIN. UNIT
Supply voltage VCC 4.5 5.0 5.5 V
Operating temperature range TA–40 +25 +85 °C
µ
PC2766GR/GS
6Data Sheet P10193EJ4V0DS00
ELECTRICAL CHARACTERISTICS (VCC = 5 V, TA = 25 °C,ZL = 250 Ω)
µ
PC2766GR/GS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Supply current ICC – 60 78 mA no input signal
RF input bandwidth RF BW DC - DC - – MHz fIF = 40 MHz, fRF > fLO
750 1000 IQ phase balance ≤ ±1.5°
IF output bandwidth IF BW DC 200 – MHz fRF = 480 MHz, PLO = –10 dBm
fRF > fLO, –3 dB down, Vagc = 0 V
Gain control range GGC 40 45 – dB fRF = 480 MHz, fIF = 40 MHz
P
RF
= –30 dBm,
PLO = –10 dBm
Vagc = 0 – 5 V
IQ phase balance
∆φ
–±0.3 ±1.5 deg fRF = 480 MHz, fIF = 40 MHz
PRF = –30 dBm, PLO = –10 dBm
IQ amplitude balance
∆
G–±0.3 ±0.5 dB fRF = 480 MHz, fIF = 40 MHz
PRF = –30 dBm, PLO = –10 dBm
Vagc = 0 V
Output voltage VO1.2 1.5 – VP-P fRF = 480 MHz, fIF = 40 MHz
P
LO
= –10 dBm, Z
L
= 250 Ω
Conversion gain CG 15 20 25 dB fRF = 480 MHz, fIF = 40 MHz
Vagc = 0 V
STANDARD CHARACTERISTICS (REFERENCE VALUES) (VCC = 5 V, TA = 25 °C,ZL = 250 Ω)
µ
PC2766GR/GS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Noise figure NF – 21 – dB fRF = 480 MHz, fIF = 40 MHz
PLO = –10 dBm, Vagc = 0 V
LO to RF isolation LO-RFisol –55–dBfLO = 440 MHz, PLO = –10 dBm
Vagc = 0 V
LO to IF isolation LO-IFisol –10–dBfLO = 440 MHz, PLO = –10 dBm
Vagc = 0 V
3rd order intermodulation IM3– 30 – dBc fRF1 = 480 MHz, fRF2 = 490 MHz
distortion fLO = 440 MHz, Pin = –20 dBm
PLO = –10 dBm, Vagc = 1 V
Saturated output level PO(SAT) – +2 – dBm fRF = 480 MHz, fIF = 40 MHz
PRF = –10 dBm
7
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
35
30
25
20
15
10
5
35
30
25
20
15
10
5
0.1 0.5 1 5 0.1 0.5 1 50.05
CG _ Conversion Gain _ dB
CG _ Conversion Gain _ dB
f
RF
_ RF Frequency _ GHz f
RF
_ RF Frequency _ GHz
CG vs. f
RF
(Iout) CG vs. f
RF
(Qout)
f
IF
= 40 MHz
P
LO
= _10 dBm
Vagc = 0 V
Note 2
f
IF
= 40 MHz
P
LO
= _10 dBm
Vagc = 0 V
Note 2 T
A
= _40 ˚C
T
A
= 25 ˚CT
A
= 85 ˚C
T
A
= _40 ˚C
T
A
= 25 ˚CT
A
= 85 ˚C
T
A
= _40 ˚C
T
A
= 25 ˚C
T
A
= 85 ˚C
_5
30
25
20
15
10
0
_5
30
25
20
15
10
0
40 100
CG _ Conversion Gain _ dB
CG _ Conversion Gain _ dB
f
IF
_ IF Frequency _ MHz f
IF
_ IF Frequency _ MHz
CG vs. f
IF
(Iout) CG vs. f
IF
(Qout)
f
RF
= 480 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
Vagc = 0 V
Note 2
55
60 80 200 300 40 10060 80 200 300
T
A
= _40 ˚C
T
A
= 25 ˚C
T
A
= 85 ˚C
f
RF
= 480 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
Vagc = 0 V
Note 2
5
_10
_20
Pout _ Output Power Level _ dBm
Pin vs. Pout (Iout)
0
V
CC
= 5.0 V
f
RF
= 480 MHz
f
IF
= 40 MHz
P
LO
= _10 dBm
Vagc = 0 V
Note 2
_40 _30 _20 _10
V
CC
= 5.5 V
V
CC
= 4.5 V
Pout _ Output Power Level _ dBm
Pin _ Input Power Level _ dBm
Pin vs. Pout (Qout)
0
V
CC
= 5.0 V
f
RF
= 480 MHz
f
IF
= 40 MHz
P
LO
= _10 dBm
Vagc = 0 V
Note 2
_40 _30 _20 _10
V
CC
= 5.5 V
V
CC
= 4.5 V
Pin _ Input Power Level _ dBm
0
_15
_25
_5
5
_10
_20
0
_15
_25
_5
TYPICAL CHARACTERISTICS
– on Measurement Circuit – (Note 2 Lower local)
µ
PC2766GR/GS
8Data Sheet P10193EJ4V0DS00
I-Q Amplitude Balance [ ] (dB)
I
Q
IQ AMPLITUDE BALANCE vs. f
RF
2
1.5
1
0.5
0
_0.5
_1
_1.5
_20.50.10.05 1 5
T
A
= _40 ˚C
T
A
= 85 ˚C
T
A
= 25 ˚C
f
RF
_ RF Frequency _ GHz
I-Q Phase Balance ( )˚
I
Q
IQ PHASE BALANCE vs. f
RF
0
_5
_10
_15
_20 0.50.10.05 1 5
T
A
= _40 ßC
T
A
= 85 ˚CT
A
= 25 ˚C
f
RF
_ RF Frequency _ GHz
f
IF
= 40 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
Note 2
f
IF
= 40 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
Note 2
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. Pin (Qout)
10
0
Pin _ Input Power Level _ (dBm)
f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
P
LO
= _10 dBm
Pin = _20 dBm
each
Vagc = 1.0 V
_10
_20
_30
_40
_50
_60 _40 _30 _20 _10 0
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. Pin (Iout)
10
0
Pin _ Input Power Level _ (dBm)
_10
_20
_30
_40
_50
_60 _40 _30 _20 _10 0
f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
P
LO
= _10 dBm
Pin = _20 dBm
each
Vagc = 1.0 V
Pout _ Output Power Level _ dBm
Pout _ Output Power Level _ dBm
V
CC
= 5.5 V
V
CC
= 5.0 V
V
CC
= 4.5 V V
CC
= 5.5 V
V
CC
= 5.0 V
V
CC
= 4.5 V
Vagc _ AGC Voltage _ V
CG _ Conversion Gain _dB
CG vs. Vagc (Qout)
20 f
RF
= 480 MHz
f
IF
= 40 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
V
CC
= 5.0 V
Note 2
10
0
_10
_20
103
_
30 245
Vagc _ AGC Voltage _ V
CG _ Conversion Gain _dB
CG vs. Vagc (Iout)
20 f
RF
= 480 MHz
f
IF
= 40 MHz
P
RF
= _30 dBm
P
LO
= _10 dBm
V
CC
= 5.0 V
Note 2
10
0
_10
_20
103
_
30 245
9
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
Vagc _ AGC Voltage _ V
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. CG (Qout)
0
CG _ Conversion Gain _ dB
f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
Pin = _20 dBm each
P
LO
= _10 dBm
Vagc = 0 to 5 V
_10
_20
_30
_40
_50 _30 _20 _10 10020
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. CG (Iout)
0
CG _ Conversion Gain _ dB
f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
Pin = _20 dBm each
P
LO
= _10 dBm
Vagc = 0 to 5 V
_10
_20
_30
_40
_50 _30 _20 _10 10020
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. Vagc (Iout)
0f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
Pin = _20 dBm each
P
LO
= _10 dBm
_10
_20
_30
_40
_50012 435
IM
3
_ Third Intermodulation Distortion _ dBc
IM
3
vs. Vagc (Qout)
0
Vagc _ AGC Voltage _ V
f
RF1
= 480 MHz
f
RF2
= 490 MHz
f
LO
= 440 MHz
Pin = _20 dBm each
P
LO
= _10 dBm
_10
_20
_30
_40
_50012 435
µ
PC2766GR/GS
10 Data Sheet P10193EJ4V0DS00
MEASUREMENT CIRCUIT
(@ ZL = 250 Ω)
Note 3 is Low pass filter in order to eliminate local leak.
I out OSC IN
Power
Divider
300 nH
250 Ω
1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF 1 000 pF
250 Ω
1 000 pF
1 000 pF
20 19 18 17 16 15 14 13 12 11
I-IF Amp.
I-MIX.
I-Lo.Buff.Amp Q-Lo.Buff.Amp
Q-IF Amp.
Q-MIX.
RF AGC
RF Pre.Amp. AGC cont.
123456789
1 000 pF
1 000 pF 1 000 pF 1 000 pF 1 000 pF1 000 pF 1 000 pF
RF IN Vagc Vcc
10
200 Ω200 Ω
8 pF
Note 3
8 pF
Note 3
Q out
1 000 pF
SG
300 nH
Spectrum
Analyzer
50 Ω50 Ω
11
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
APPLICATION CIRCUIT EXAMPLE
1 000 pF 1 000 pF 1 000 pF 1 000 pF
20 19 18 16 15 14 13 12 11
I-IF Amp.
I-MIX.
I-Lo.Buff.Amp. Q-Lo.Buff.Amp.
Q-IF Amp.
Q-MIX.
RF AGC
RF Pre.Amp. AGC cont.
12345678910
1 000 pF 1 000 pF 1 000 pF
RF IN Vagc Vcc
I out Q out
I Bias Trim
17
1 000 pF 1 000 pF
1 000 pF1 000 pF
LPF
Q out
LPF
I out
LPFLPF
90˚0˚
1 000 pF
5 kΩ
1 000 pF
Q Bias Trim
1 000 pF
5 kΩ
OSC IN
90˚ PHASE SHIFTER
µ
PC2766GR/GS
12 Data Sheet P10193EJ4V0DS00
PACKAGE DIMENSIONS
20 PIN PLASTIC SSOP (225 mil) (UNIT: mm)
NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition.
20
detail of lead end
1.8 MAX.
3˚
+7˚
–3˚
0.65
0.10
M
0.15
0.5 ± 0.2
11
110
6.7 ± 0.3
1.5 ± 0.1
0.1 ± 0.1
0.22
+0.10
–0.05
0.575 MAX.
0.15
+0.10
–0.05
6.4 ± 0.2
4.4 ± 0.1 1.0 ± 0.2
13
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
20 PIN PLASTIC SOP (300 mil) (UNIT: mm)
NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition.
12.7±0.3
1.27
0.4±0.1
detail of lead end
7.7±0.3
5.6±0.2
0.6±0.2
0.12
1.1
0.10
M
110
1120
0.20
+0.10
–0.05
3°
+7°
–3°
1.55±0.1
0.78 MAX.
0.1±0.1
1.8 MAX.
µ
PC2766GR/GS
14 Data Sheet P10193EJ4V0DS00
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used or in case soldering is done under
different conditions.
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
µ
PC2766GR
Soldering process Soldering conditions Symbol
Infrared ray reflow Peak package’s surface temperature: 235 °C or below, IR35-00-3
Reflow time: 30 seconds or below (210 °C or higher),
Number of reflow process: 3, Exposure limit Note: None
VPS Peak package’s surface temperature: 215 °C or below, VP15-00-3
Reflow time: 40 seconds or below (200 °C or higher),
Number of reflow process: 3, Exposure limit Note: None
Wave soldering Solder temperature: 260 °C or below, WS60-00-1
Flow time: 10 seconds or below,
Number of flow process: 1, Exposure limitNote: None
Partial heating method Terminal temperature: 300 °C or below,
Flow time: 3 seconds or below,
Exposure limitNote: None
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 °C and relative humidity at 65 % or less.
Caution Do not apply more than single process at once, except for “Partial heating method”.
15
µ
PC2766GR/GS
Data Sheet P10193EJ4V0DS00
[MEMO]
µ
PC2766GR/GS
•The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
•No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
•NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
•Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
•While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
•NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated “quality assurance program“ for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98.8
