2N5884 (PNP) & 2N5886 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
TO−3 Type Package
Description:
The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general
purpose power amplifier and switching applications.
Features:
DLow Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A
DExcellent DC Current Gain: hFE = 20 − 100 @ IC = 10A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 80V......................................................
Collector−Base Voltage, VCBO 80V.......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous 25A..................................................................
Peak 50A.......................................................................
Base Current, IB7.5A..................................................................
Total Device Dissipation (TC = +25C), PD200W...........................................
Derate Above 25C 1.15W/C......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.875C/W...................................
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 80 − − V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 − − 2.0 mA
ICBO VCB = 80V, IE = 0 − − 1.0 mA
ICBX VCE = 100V, VBE(off) = 1.5V − − 1.0 mA
VCE = 100V, VBE(off) = 1.5V, TC = +150C− − 10 mA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 1.0 mA
Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 3A, VCE = 4V 35 − −
IC = 10A, VCE = 4V 20 −100
IC = 25A, VCE = 4V 4.0 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 15A, IB = 1.5A − − 1.0 V
IC = 25A, IB = 6.25A − − 4.0 V
Base−Emitter ON Voltage VBE(on) IC = 10A, VCE = 4V − − 1.5 V
Base−Emitter Saturation Voltage VBE(sat) IC = 25A, IB = 6.25A − − 2.5 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTIC = 1A, VCE = 10V, f = 1MHz, Note 2 4.0 − − MHz
Small−Signal Current Gain hfe IC = 3A, VCE = 4V, f = 1kHz 20 − −
Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
Note 2. fT = |hfe| S ftest.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
