FDN360P FDN360P Single P-Channel, PowerTrench MOSFET Features General Description * -2 A, -30 V. This P-Channel Logic Level MOSFET is produced using ON Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. RDS(ON) = 80 m @ VGS = -10 V RDS(ON) = 125 m @ VGS = -4.5 V * Low gate charge (6.2 nC typical) * High performance trench technology for extremely low RDS(ON) . These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. * These Devices are Pb-Free and are RoHS Compliant D D S G TM SuperSOT -3 Absolute Maximum Ratings Symbol S G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -30 V VGSS Gate-Source Voltage 20 V ID Drain Current -2 A PD Power Dissipation for Single Operation - Continuous (Note 1a) - Pulsed TJ, TSTG -10 (Note 1a) 0.5 (Note 1b) 0.46 W -55 to +150 C (Note 1a) 250 C/W (Note 1) 75 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 360 FDN360P 7'' 8mm 3000 units 2003 Semiconductor Components Industries, LLC. November-2018, Rev. 7 Publication Order Number: FDN360P /D Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = -250 A BVDSS BVDSS TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA -3 V On Characteristics -30 ID = -250 A, Referenced to 25C VDS = -24V, V -22 VGS = 0 V mV/C -1 A -10 VDS = -24V, VGS = 0 V, TJ=55C (Note 2) VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -2 A 5 S VDS = -15 V, f = 1.0 MHz V GS = 0 V, 298 pF 83 pF 39 pF -1 -1.9 4 VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125C VGS= -4.5 V, ID = -1.5A 63 90 100 mV/C 80 136 125 -10 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge (Note 2) 6 12 ns 13 23 ns Turn-Off Delay Time 11 20 ns Turn-Off Fall Time 6 12 ns 6.2 9 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, VGS = -10 V, VDS = -15V, VGS = -10 V ID = -1 A, RGEN = 6 ID = -3.6 A, 1 nC 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -0.42 A Voltage (Note 2) -0.8 -0.42 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2 FDN360P Electrical Characteristics FDN360P Typical Characteristics 15 2 -6.0V -5.0V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V -4.5V 12 9 -4.0V 6 -3.5V 3 -3.0V 1.8 VGS = -3.5V 1.6 1.4 -4.0V 1.2 -4.5V 1 -5.0V -6.0V 0.8 -7.0V -10V 0.6 0 0 1 2 3 4 0.4 5 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.3 ID = -2A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 ID = -1A 0.25 0.2 TA = 125oC 0.15 0.1 TA = 25oC 0.05 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 -IS, REVERSE DRAIN CURRENT (A) 25oC TA = -55oC VDS = -5.0V -ID, DRAIN CURRENT (A) 6 -VGS, GATE TO SOURCE VOLTAGE (V) 8 125oC 6 4 2 0 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 1 2 3 4 5 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDN360P Typical Characteristics 400 VDS = -5V ID = -3.6A f = 1 MHz VGS = 0 V -10V CISS 8 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 300 200 COSS 100 CRSS 0 0 0 1 2 3 4 5 6 7 0 6 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 24 20 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10s 10 100s 1ms 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA =270oC/W 0.1 DC TA = 25oC 0.1 1 30 10 SINGLE PULSE RJA = 270C/W TA = 25C 15 10 5 0 0.001 0.01 100 0.01 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 18 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 270 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23, 3 Lead CASE 527AG-01 ISSUE O D DATE 19 DEC 2008 SYMBOL MIN A 0.89 1.12 A1 0.013 0.10 b 0.37 0.50 c 0.085 0.18 D 2.80 3.04 E 2.10 2.64 E1 1.20 3 E1 E NOM MAX 1.40 e 0.95 BSC e1 1.90 BSC L 0.40 REF e1 L1 0.54 REF TOP VIEW 1 2 e A 0 8 q b L1 A1 SIDE VIEW L c END VIEW Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC TO-236. DOCUMENT NUMBER: STATUS: 98AON34319E ON SEMICONDUCTOR STANDARD REFERENCE: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 SOT-23, 3 LEAD http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON34319E PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM POD #SOT233-007-01 TO ON SEMICONDUCTOR. REQ. BY B. BERGMAN. DATE 19 DEC 2008 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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