2003 Semiconductor Components Industries, LLC.
November-2018, Rev. 7
Publication Order Number:
FDN360P /D
FDN360P
Single P-Channel, PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is
produced using ON Semiconductor advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•–2 A, –30 V. RDS(ON) = 80 mΩ @ VGS = –10 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
•High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
G
D
S
SuperSOT -3
TM
D
SG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –30V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –2 A
–Pulsed –10
Power Dissipation for Single Operation (Note 1a) 0.5
PD
(Note 1b) 0.46 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
360 FDN360P 7’’ 8mm 3000 units
FDN360P
•Low gate charge (6.2 nC typical)
•High performance trench technology for extremely
low RDS(ON) .
•These Devices are Pb-Free and are RoHS Compliant
www.onsemi.com
2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min Typ
Max
Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –22 mV/°C
VDS = –24V, VGS = 0 V –1 µA
IDSS Zero Gate Voltage Drain Current VDS = –24V, VGS = 0 V, TJ=55°C –10
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.9 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C 4 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –2 A
VGS = –10 V, ID = –2 A, TJ=125°C
VGS= –4.5 V, ID = –1.5A
63
90
100
80
136
125
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –10 A
gFS Forward Transconductance VDS = –5 V, ID = –2 A 5 S
Dynamic Characteristics
Ciss Input Capacitance 298 pF
Coss Output Capacitance 83 pF
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz 39 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 13 23 ns
td(off) Turn–Off Delay Time 11 20 ns
tf Turn–Off Fall Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
6 12 ns
Qg Total Gate Charge 6.2 9 nC
Qgs Gate–Source Charge 1 nC
Qgd Gate–Drain Charge
VDS = –15V, ID = –3.6 A,
VGS = –10 V
1.2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –0.42 A (Note 2) –0.8 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN360P
Typical Characteristics
0
3
6
9
12
15
0 1 2 3 4 5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
VGS = -10V
-3.5V
-3.0V
-4.5V
-4.0V
-5.0V
-6.0V
V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 3 6 9 12 15
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
-6.0V
-5.0V
-4.0V
-10V
-4.5V
-7.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -2A
VGS = -10V
0.05
0.1
0.15
0.2
0.25
0.3
2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -1A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -5.0V
0.0001
0.001
0.01
0.1
1
10
00.2 0.4 0.6 0.8 11.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN360P
www.onsemi.com
3
Typical Characteristics
0
2
4
6
8
10
01234567
Qg, GATE CHARGE (nC)
-VGS
, GATE-SOURCE VOLTAGE (V)
ID = -3.6A VDS = -5V -10V
-15V
0
100
200
300
400
0 6 12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID
, DRAIN CURRENT (A)
DC1s
100ms
µ
s
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA =270oC/W
TA = 25oC
10ms1ms
10
µ
s
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 270 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN360P
www.onsemi.com
4
SOT−23, 3 Lead
CASE 527AG−01
ISSUE O
DATE 19 DEC 2008
E1 E
A1
e
e1
b
D
3
12
c
A
TOP VIEW
SIDE VIEW END VIEW
L1 L
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC TO-236.
SYMBOL MIN NOM MAX
q
θ
A
A1
b
c
D
E
E1
e
e1
L1
0º 8º
L
0.013
0.37
0.085
2.80
2.10
1.20
1.90 BSC
0.40 REF
1.12
0.10
0.50
0.18
3.04
2.64
1.40
0.54 REF
0.95 BSC
0.89
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
http://onsemi.com
1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0
Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
REFERENCE:
DESCRIPTION:
98AON34319E
ON SEMICONDUCTOR STANDARD
SOT−23, 3 LEAD
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON34319E
PAGE 2 OF 2
ISSUE REVISION DATE
ORELEASED FOR PRODUCTION FROM POD #SOT233−007−01 TO ON
SEMICONDUCTOR. REQ. BY B. BERGMAN.
19 DEC 2008
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 01O
Case Outline Number:
527AG
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer ’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body . Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
◊