For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
General Description
Features
Functional Diagram
The HMC1054 is a four stage GaAs pHEMT MMIC
1 Watt Power Amplier which operates between 35
and 45 GHz. The HMC1054 provides 19.5 dB of gain,
+32.5 dBm of saturated output power, and 13% PAE
from a +6V power supply. The HMC1054 exhibits
excellent linearity and is optimized for high capacity
point-to-point and point-to-multi-point radio systems.
The amplier conguration and high gain make it an
excellent candidate for last stage signal amplication
before the antenna. All data is taken with the chip in a
50 Ohm test xture connected via (2) 0.025 mm (1 mil)
diameter wire bonds of 0.31 mm (12 mil) length.
Saturated Output Power: +32.5 dBm
High Output IP3: +40.5 dBm
High Gain: 19.5 dB
DC Supply: +6V @ 1200 mA
No External Matching Required
Die Size: 2.97 x 2.36 x 0.1 mm
Electrical Specications, TA = +25° C
Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5, Vdd6, Vdd7, Vdd8 = +6V, Idd = 1200 mA [1]
Typical Applications
The HMC1054 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Min. Ty p. Max. Units
Frequency Range 35 - 39 39 - 42 42 - 45 GHz
Gain 17 20 16 19 16.5 19.5 dB
Gain Variation Over Temperature 0.023 0.027 0.033 dB/ °C
Input Return Loss 11 11 15 dB
Output Return Loss 15 18 11 dB
Output Power for 1 dB Compression (P1dB) 26 28.5 25 27. 5 24 26 dBm
Saturated Output Power (Psat) 32.5 31.5 30 dBm
Output Third Order Intercept (IP3)[2] 40.5 38 37 dBm
Total Supply Current (Idd) 1200 1200 1200 mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +6V @ 1200 mA, Pout / Tone = +17 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain &
Return Loss vs. Frequency Gain vs. Temperature
P1dB vs. Temperature P1dB vs. Supply Voltage
-30
-20
-10
0
10
20
30
30 32 34 36 38 40 42 44 46
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
12
14
16
18
20
22
24
26
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
22
24
26
28
30
32
35 36 37 38 39 40 41 42 43 44 45
+25C
+85C
-55C
FREQUENCY (GHz)
P1dB (dBm)
22
24
26
28
30
32
35 36 37 38 39 40 41 42 43 44 45
5V
5.5V
6V
FREQUENCY (GHz)
P1dB (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Output IP3 vs.
Supply Current, Pout/Tone = +17 dBm
Output IP3 vs.
Temperature, Pout/Tone = +17 dBm
Psat vs. Supply Current (Idd)P1dB vs. Supply Current (Idd)
Psat vs. Temperature Psat vs. Supply Voltage
26
28
30
32
34
36
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
FREQUENCY (GHz)
Psat (dBm)
26
28
30
32
34
36
35 36 37 38 39 40 41 42 43 44 45
5V
5.5V
6V
FREQUENCY (GHz)
Psat (dBm)
22
24
26
28
30
32
35 36 37 38 39 40 41 42 43 44 45
1000 mA
1200 mA
1400 mA
FREQUENCY (GHz)
P1dB (dBm)
26
28
30
32
34
36
35 36 37 38 39 40 41 42 43 44 45
1000 mA
1200 mA
1400 mA
FREQUENCY (GHz)
Psat (dBm)
26
31
36
41
46
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
FREQUENCY (GHz)
IP3 (dBm)
26
31
36
41
46
35 36 37 38 39 40 41 42 43 44 45
1000 mA
1200 mA
1400 mA
FREQUENCY (GHz)
IP3 (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Power Compression @ 40 GHz Reverse Isolation vs. Temperature
Output IP3 vs.
Supply Voltage, Pout/Tone = +17 dBm
Output IM3 @ Vdd = +5.5V Output IM3 @ Vdd = +6V
Output IM3 @ Vdd = +5V
26
31
36
41
46
35 36 37 38 39 40 41 42 43 44 45
5V
5.5V
6V
FREQUENCY (GHz)
IP3 (dBm)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
36 GHz
38 GHz
39 GHz
40 GHz
41 GHz
42 GHz
44 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
36 GHz
38 GHz
39 GHz
40 GHz
41 GHz
42 GHz
44 GHz
Pout/TONE (dBm)
IM3 (dBc)
0
10
20
30
40
50
60
70
10 12 14 16 18 20 22 24
36 GHz
38 GHz
39 GHz
40 GHz
41 GHz
42 GHz
44 GHz
Pout/TONE (dBm)
IM3 (dBc)
-80
-70
-60
-50
-40
-30
-20
-10
0
35 36 37 38 39 40 41 42 43 44 45
+25 C
+85 C
-55 C
FREQUENCY (GHz)
ISOLATION (dB)
0
5
10
15
20
25
30
35
40
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Pout
Gain
PAE
INPUT POWER (dBm)
Pout (dBm), Gain (dB), PAE (%)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
5
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +7V
RF Input Power (RFIN) +20 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 135 mW/°C above 85 °C) 8.8 W
Thermal Resistance
(channel to die bottom) 7.3 9 °C / W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (V) Idd (mA)
+5.0 1200
+5.5 1200
+6.0 1200
Note: Amplier will operate over full voltage ranges shown
above, Vgg adjusted to achieve Idd = 1200 mA at +6V
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Power Dissipation
Gain & Power vs.
Supply Voltage @ 40 GHz
Gain & Power vs.
Supply Current @ 40 GHz
15
20
25
30
35
40
1000 1100 1200 1300 1400
GAIN
P1dB
Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
15
20
25
30
35
40
5 5.2 5.5 5.7 6
GAIN
P1dB
Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
4
5
6
7
8
9
10
-8 -4 0 4 8 12 16
36 GHz
38 GHz
39 GHz
40 GHz
41 GHz
42 GHz
44 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
7
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Application Circuit
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN RF signal input. This pad is AC coupled and matched to 50
Ohms over the operating frequency range.
2, 12 Vgg1, Vgg2
Gate control for amplier. Amplier can be biased by either
Vgg1 or Vgg2. External bypass capacitors of 100pF, 0.01uF,
and 4.7uF are required
3, 4, 5, 6 Vdd1-4
Drain bias voltage for the top half of the amplier. External
bypass capacitors of 100pF are required for each pad, fol-
lowed by common 0.01uF and 4.7uF capacitors.
7RFOUT RF signal output. This pad is AC coupled and matched to 50
Ohms over the operating frequency range.
8, 9, 10, 11 Vdd5-8
Drain bias voltage for the bottom half of the amplier. Exter-
nal bypass capacitors of 100pF are required for each pad,
followed by 0.01uF and 4.7uF capacitors.
Die Bottom GND Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
8
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC1054
v00.0612
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER
35 - 45 GHz
Notes: