TSD1664
Low Vcesat NPN Transistor
1/4 Version: B07
SOT-89
PRODUCT SUMMARY
BVCEO
32V
BVCBO
40V
IC
1A
VCE(SAT)
0.15V @ IC / IB = 500mA / 50mA
Features
● Low VCE(SAT) 0.15V @ IC / IB = 500mA / 50mA (Typ.)
● Complementary part with TSB1132
Structure
● Epitaxial Planar Type
● NPN Silicon Transistor
Part No.
Package
Packing
TSD1664CY RM
SOT-89
1Kpcs / 7” Reel
TSD1664CY RMG
SOT-89
1Kpcs / 7” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
32
V
Emitter-Base Voltage
VEBO
5
V
DC
1
Collector Current
Pulse
IC
2 (note1)
A
0.5
Collector Power Dissipation
PD
2 (note 2)
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw=20ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = 50uA, IE = 0
BVCBO
40
--
--
V
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
BVCEO
32
--
--
V
Emitter-Base Breakdown Voltage
IE = 50uA, IC = 0
BVEBO
5
--
--
V
Collector Cutoff Current
VCB = 20V, IE = 0
ICBO
--
--
0.5
uA
Emitter Cutoff Current
VEB = 4V, IC = 0
IEBO
--
--
0.5
uA
Collector-Emitter Saturation Voltage
IC / IB = 500mA / 50mA
VCE(SAT)
--
0.15
0.4
V
DC Current Transfer Ratio
VCE = 3V, IC = 100mA
hFE
120
--
390
Transition Frequency
VCE =5V, IC=-50mA,
f=100MHz
fT
50
150
--
MHz
Output Capacitance
VCB = 10V, IE = 0, f=1MHz
Cob
--
10
20
pF
hFE values are classified as follows:
Rank
Q
R
hFE
120~270
180~390
Pin Definition:
1. Base
2. Collector
3. Emitter
TSD1664
Low Vcesat NPN Transistor
2/4 Version: B07
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. Transition Frequency v.s. IE
Figure 4. Collector Output Capacitance vs. Vcb
TSD1664
Low Vcesat NPN Transistor
3/4 Version: B07
SOT-89 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
X
= hFE rank code
SOT-89 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
4.40
4.60
0.173
0.181
B
1.50
1.7
0.059
0.070
C
2.30
2.60
0.090
0.102
D
0.40
0.52
0.016
0.020
E
1.50
1.50
0.059
0.059
F
3.00
3.00
0.118
0.118
G
0.89
1.20
0.035
0.047
H
4.05
4.25
0.159
0.167
I
1.4
1.6
0.055
0.068
J
0.35
0.44
0.014
0.017
TSD1664
Low Vcesat NPN Transistor
4/4 Version: B07
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