SMD General Purpose Transistor (PNP) MMBT3906 SMD General Purpose Transistor (PNP) Features * PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description MMBT3906 Unit Conditions VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -200 mA PD 225 mW TA=25 C Total Device Power Dissipation(Note 1) 1.8 mW/C Derate above 25 C Thermal Resistance, Junction to Ambient 556 C /W Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 C 2.4 mW/C Derate above 25 C Thermal Resistance, Junction to Ambient 417 C /W Junction Temperature -55 to +150 C Storage Temperature Range -55 to +150 C RJA PD RJA TJ TSTG Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/CZ Page 1 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Electrical Characteristics (T Ambient=25C unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions V(BR)CEO Collector-Emitter Breakdown Voltage (Pulse width 300s, Duty Cycle 2.0%) -40 - V IC=-1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-10A, IE=0 V(BR)EBO Emitter-Base Breakdown Voltage -5.0 - V IE=-10A, IC=0 Base Cut-off Current - -50 nA VEB=-3V, VCE=-30V Collector Cut-off Current - -50 nA VEB=-3V, VCE=-30V Min. Max. Unit Conditions 60 - VCE=-1V, IC=-0.1mA 80 - VCE=-1V, IC=-1mA 100 300 VCE=-1V, IC=-10mA 60 - VCE=-1V, IC=-50mA 30 - VCE=-1V, IC=-100mA - -0.25 - -0.4 -0.65 -0.85 - -0.95 Description Min. Max. Unit Current Gain-Bandwidth Product 250 - MHz IBL ICEX On Characteristics Symbol hFE Description D.C. Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Small-signal Characteristics Symbol fT COBO Output Capacitance - 4.5 pF CIBO Input Capacitance - 10 pF hie Input Impedance 2.0 12 kohms hre Voltage Feedback Ratio 0.1 10 x 10-4 hfe Small-Signal Current Gain 100 400 - hoe Output Admittance 3.0 60 UMHOS NF Noise Figure - 4.0 dB Conditions VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, f=1.0MHz, IE=0 VEB=-0.5V, f=1.0MHz, IC=0 VCE=-10V, IC=-1mA, f=1kHz VCE=-10V, IC=-1mA, f=1kHz VCE=10V, IC=-1mA, f=1kHz VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-100A, Rs=1.0kohms, f=1kHz Rev. B/CZ www.taitroncomponents.com Page 2 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Switching Characteristics Symbol Min. Max. Delay Time - 35 tr Rise Time - 35 ts Storage Time - 225 tf Fall Time - 75 td Description Unit Conditions VCC=-3V, VBE=0.5V IC=-10mA, IB1=-1mA ns VCC=-3V, IC=-10mA, IB1= IB2=-1mA Equivalent Test Circuit Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time Total Shunt Capacitance of test jig and connectors Rev. B/CZ www.taitroncomponents.com Page 3 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Typical Characteristics Curves ( TJ =25C --- TJ =125C ) Fig.4- Charge Data Charge Q (pC) Capacitance (pF) Fig.3- Capacitance Collector Current IC (mA) Reverse Bias Voltage (V) Fig.6- Fall Time Time (ns) Fall Time tf (nS) Fig.5- Turn-On Time Collector Current IC (mA) Collector Current IC (mA) Rev. B/CZ www.taitroncomponents.com Page 4 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Typical Audio Small-Signal Characteristics Noise Figure Variations (VCE=-5.0 V. TA=25C, Bandwidth=1.0Hz) Fig.8- Noise Figure Noise Figure NF (dB) Noise Figure NF (dB) Fig.7- Noise Figure Frequency f (kHz) Source Resistance RS (k) Rev. B/CZ www.taitroncomponents.com Page 5 of 9 SMD General Purpose Transistor (PNP) MMBT3906 h Parameters (VCE=-10V, f=1.0kHz, TA=25C) Fig.9- Current Gain Current Gain hfe Output Admittance hoe ( mhos) Fig.10- Output Admittance Collector Current IC (mA) Collector Current IC (mA) Fig.12- Voltage Feedback Ratio Input Impedance hie (K) Voltage Feedback Ratio hfe (x10-4) Fig.11- Input Impedance Collector Current IC (mA) Collector Current IC (mA) Rev. B/CZ www.taitroncomponents.com Page 6 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Typical Static Characteristics DC Current Gain hFE (Normalized) Fig.13- DC Current Gain Collector Current IC (mA) Collector-Emitter Voltage VCE (V) Fig.14- Collector Saturation Region Base Current IB (mA) Rev. B/CZ www.taitroncomponents.com Page 7 of 9 SMD General Purpose Transistor (PNP) MMBT3906 Fig.16- Temperature Coefficients Voltage (V) Temperature Coefficient (mV/C) Fig.15- "On" Voltage Collector Current IC (mA) Collector Current IC (mA) Device Marking: MMBT3906=2A Dimensions in mm SOT-23 Rev. B/CZ www.taitroncomponents.com Page 8 of 9 SMD General Purpose Transistor (PNP) MMBT3906 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/CZ www.taitroncomponents.com Page 9 of 9