Rev. B
/
CZ
MMBT3906
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 9
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SMD General Purpose
Transistor (PNP)
SMD General Purpose Transistor (PNP)
Features
• PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 20 8
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT3906 Unit Conditions
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
IC Collector Current -200 mA
225 mW TA=25 ˚C
PD Total Device Power Dissipation(Note 1) 1.8 mW/°C Derate above 25 ˚C
RθJA Thermal Resistance, Junction to Ambient 556 °C /W
300 mW TA=25 ˚C
PD Total Device Power Dissipation, Alumina Substrate
(Note 2) 2.4 mW/°C Derate above 25 ˚C
RθJA Thermal Resistance, Junction to Ambient 417 °C /W
TJ Junction Temperature -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
SOT-23
Rev. B
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SMD General Purpose Transistor (PNP)
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Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Max. Unit Conditions
V(BR)CEO Collector-Emitter Breakdown Voltage
(Pulse width ≤300µs, Duty Cycle ≤2.0%) -40 - V IC=-1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-10µA, IE=0
V(BR)EBO Emitter-Base Breakdo wn Voltage -5.0 - V IE=-10µA, IC=0
IBL Base Cut-off Current - -50 nA VEB=-3V, VCE=-30V
ICEX Collector Cut-off Current - -50 nA VEB=-3V, VCE=-30V
On Characteristics
Symbol Description Min. Max. Unit Conditions
60 - VCE=-1V, IC=-0.1mA
80 - VCE=-1V, IC=-1mA
100 300 VCE=-1V, IC=-10mA
60 - VCE=-1V, IC=-50mA
hFE D.C. Current Gain
30 -
VCE=-1V, IC=-100mA
- -0.25 IC=-10mA, IB=-1mA
VCE(sat) Collector-Emitter Saturation Voltage - -0.4 V IC=-50mA, IB=-5mA
-0.65 -0.85 IC=-10mA, IB=-1mA
VBE(sat) Base-Emitter Saturation Voltage - -0.95 V IC=-50mA, IB=-5mA
Small-signal Characteristics
Symbol Description Min. Max. Unit Conditions
fT Current Gain-Bandwidth Product 250 - MHz VCE=-20V, IC=-10mA,
f=100MHz
COBO Output Capacitance - 4.5 pF VCB=-5V, f=1.0MHz,
IE=0
CIBO Input Capacitance - 10 pF
VEB=-0.5V, f=1.0MHz,
IC=0
hie Input Impedance 2.0 12 kohms VCE=-10V, IC=-1mA,
f=1kHz
hre Voltage Feedback Ratio 0.1 10 x 10-4 VCE=-10V, IC=-1mA,
f=1kHz
hfe Small-Signal Current Gain 100 400 - VCE=10V, IC=-1mA,
f=1kHz
hoe Output Admittance 3.0 60 UMHOS VCE=-10V, IC=-1mA,
f=1kHz
NF Noise Figure - 4.0 dB VCE=-5V, IC=-100µA,
Rs=1.0kohms, f=1kHz
Rev. B
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SMD General Purpose Transistor (PNP)
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Fig.1- Delay and Rise Time Fig.2- Storage and Fall Time
Switching Characteristics
Symbol Description Min. Max. Unit Conditions
td Delay Time - 35
tr Rise Time - 35 VCC=-3V, VBE=0.5V
IC=-10mA, IB1=-1mA
ts Storage Time - 225
tf Fall Time - 75
ns VCC=-3V, IC=-10mA,
IB1= IB2=-1mA
Equivalent Test Circuit
Total Shunt Capacitance of test jig and connectors
Rev. B
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SMD General Purpose Transistor (PNP)
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Fig.3- Capacitance
Reverse Bias Voltage (V)
Fig.4- Charge Data
Collector Current IC (mA)
Fig.5- Turn-On Time
Collector Current IC (mA)
Fig.6- Fall Time
Collector Current IC (mA)
Typical Characteristics Curves ( TJ =25°C --- TJ =125°C )
Capacitance (pF)
Charge Q (pC)
Time (ns)
Fall Time tf (nS)
Rev. B
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Fig.7- Noise Figure
Frequency f (kHz)
Fig.8- Noise Figure
Source Resistance RS (kΩ)
Typical Audio Small-Signal Characteristics Noise Figure Variations
(VCE=-5.0 V. TA=25°C, Bandwidth=1.0Hz)
Noise Figure NF (dB)
Noise Figure NF (dB)
Rev. B
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SMD General Purpose Transistor (PNP)
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Fig.9- Current Gain
Collector Current IC (mA)
Fig.10- Output Admittance
Collector Current IC (mA)
Fig.11- Input Impedance
Collector Current IC (mA)
Fig.12- Voltage Feedback Ratio
Collector Current IC (mA)
h Parameters (VCE=-10V, f=1.0kHz, TA=25°C)
Current Gain hfe
Output Admittance hoe (μ mhos)
Input Impedance hie (KΩ)
Voltage Feedback Ratio hfe (x10-4)
Rev. B
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SMD General Purpose Transistor (PNP)
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Fig.13- DC Current Gain
Collector Current IC (mA)
Fig.14- Collector Saturation Region
Base Current IB (mA)
Typical Static Characteristics
DC Current Gain hFE (Normalized) Collector-Emitter Voltage VCE (V)
Rev. B
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SMD General Purpose Transistor (PNP)
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Fig.15- “On” Voltage
Collector Current IC (mA)
Fig.16- Temperature Coefficients
Collector Current IC (mA)
Device Marking: MMBT3906=2A
Dimensions in mm
SOT-23
Voltage (V)
Temperature Coefficient (mV/°C)
Rev. B
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