2N4402
PNP General Purpose Amplifier
2N4402
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 40 V
VCBO Collector-Base Voltage 40 V
VEBOEmitter-Base Voltage5.0V
ICCollector Current - Continuous600mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4402
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
2001 Fairchild Semiconductor Corporation 2N4402, Rev A
2N4402
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Sy mb ol Pa rameter Test Condition s Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1 00 µA, I E = 0 40 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltag e IE = 100 µA, IC = 0 5.0 V
ICEX Collector Cutoff Current VCE = 3 5 V, V EB = 0.4 V 0.1 µA
IBL Ba se Cutoff Curre nt VCE = 3 5 V, V EB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Cu rr en t G ain VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 1 0 mA
VCE = 2.0 V, IC = 1 50 m A
VCE = 2.0 V, IC = 5 00 m A
30
50
50
20 150
VCE(sat)Co ll ecto r-Emitter Sa t uratio n Voltag e IC = 1 50 m A, IB = 1 5 mA
IC = 5 00 m A, IB = 5 0 mA 0.40
0.75 V
V
VBE(sat)B ase-Em itt er S aturat ion Voltage IC = 1 50 m A, IB = 1 5 mA
IC = 5 00 m A, IB = 5 0 mA 0.75 0.95
1.30 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacita nce VCB = 1 0 V, f = 140 kHz 8.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
hfe Small-Signal Current Gain IC = 20 mA, VCE = 1 0 V,
f = 100 MHz 1.5
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 1 0 V, 30 250
hie Input Impedance f = 1.0 kHz 0.75 7.5 kΩ
hre Voltage Feedback Ratio 0.10 8.0 x10-4
hoe Ou tput Adm i ttance 1. 0 100 µmhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
tdDelay Time VCC = 30 V, IC = 150 m A, 15 ns
trRise Time IB1 = 15 mA, VBE ( o ff ) = 2.0 V 20 ns
tsStor age T i m e VCC = 30 V, IC = 150 m A, 225 ns
tfFall Time IB1 = IB2 = 1 5 m A 30 ns
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 4 0 °C
V = 5V
CE
Input and Output Capacitance
vs Reverse Bias V oltage
0.1 1 10 50
0
4
8
12
16
20
REV ERSE BIAS VOLTAGE (V)
CAPACIT ANCE (p F)
Cob
C
ib
C o llector -C u toff Cu r rent
vs A mb ient Temp eratu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TEMP ERATURE ( C)
I - C OLLECTOR CU RREN T (nA)
A
CBO
°
V = 3 5V
CB
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C ollector Cu rrent
110100500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR C UR RENT (mA)
V - COLLEC TOR EMITTER VOLTA GE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
B ase-Emitter Satur atio n
Vo ltag e vs C ollector Cu rrent
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CUR RE NT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
Base Emitter ON Vol tage vs
C o ll ector Cur rent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTA GE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125°C
PNP General Purpose Amplifier
(continued)
2N4402
Typical Characteristics (continued)
S witching Tim es
vs Collector Current
10 100 1000
0
50
100
150
200
250
I - CO LL ECTOR CU RRENT ( mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Tu r n On and Turn O f f Tim es
vs Col lecto r C urre n t
10 100 1000
0
100
200
300
400
500
I - COLLECTO R CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
Po we r Dis si pat i o n vs
Am bient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMP ERATUR E ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Ri se Time vs Coll ect or
and Turn On Base Currents
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (m A)
I - TU RN 0N BAS E CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
PNP General Purpose Amplifier
(continued)
2N4402
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitte r Characteri st ics
12 51020 50
0.1
0.2
0.5
1
2
5
I - CO LLE C TOR CURR EN T (mA )
CHAR. RE LATIVE TO VALUES AT I = -10 m A
V = -10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
_ _ _ _ _ _
Commo n Emitte r Charact eri s t ics
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - CO LLECTOR VOLT AGE (V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -1 0 m A
C
CE
CE
T = 25 C
A o
hoe
h an d h
re
hfe
hie
oe hfe
hie
h re
Commo n Emitter Characte ri st ics
-40-200 20406080100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMP ERATU RE ( C)
CHAR. RE LATIVE TO VA LUES AT T = 25 C
V = -10 V
CE
A
A
hoe
h re
hfe
hie
o
o
I = -10mA
C hfe
hie
h re
hoe
PNP General Purpose Amplifier
(continued)
2N4402
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KΩΩ
ΩΩ
Ω
- 6.0 V
1.5 V
1.0 KΩΩ
ΩΩ
Ω
- 30 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
- 16 V
0
50 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
1 KΩΩ
ΩΩ
Ω37 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
- 30 V
NOTE: BVEBO = 5.0 V
PNP General Purpose Amplifier
(continued)
2N4402
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information tabl e
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing Sty le Quan tity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit weigh t = 0.22 g m
Reel weight with compon e nts = 1 .04 kg
Ammo wei g ht with compo n ents = 1.02 kg
Max quan tity per interme d iate b ox = 10,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F6 3TNR) 3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine O ption “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead C linch H eight
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/bac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole Cente r to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0 .0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0 .0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0 .0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0 .0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0 .0 07 )
0. 00 4 (m ax )
Note : All dim ensions are in inches.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13. 9 75 14. 02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1.16 0 1.2 00
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner W i dth W2 1.630 1.69 0
Hub to Hub Center Width W3 2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuratio n: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSITIVE DEVICES
ELECTROSTATIC
D1
D3
Cust omized Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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