2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications * Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = -1 V, IC = -0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = -1 V, IC = -4 A) * Low saturation voltage : VCE (sat) = -0.5 V (max) (IC = -2 A, IB = -50 mA) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -6 V IC -2 ICP -4 Base current IB -2 A Collector power dissipation PC 900 mW Junction temperature Tj 150 C Tstg -55 to 150 C Collector current DC Pulsed (Note 1) Storage temperature range A JEDEC TO-92MOD JEITA TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -20 V, IE = 0 -100 nA Emitter cut-off current IEBO VEB = -6 V, IC = 0 -100 nA Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -10 V Emitter-base breakdown voltage V (BR) EBO IE = -1 mA, IC = 0 -6 V 140 600 VCE = -1 V, IC = -4 A 60 120 DC current gain hFE (1) VCE = -1 V, IC = -0.5 A (Note 2) Collector-emitter saturation voltage hFE (2) VCE (sat) IC = -2 A, IB = -50 mA -0.20 -0.50 V Base-emitter voltage VBE VCE = -1 V, IC = -2 A -0.83 -1.5 V Transition frequency fT VCE = -1 V, IC = -0.5 A 140 MHz VCB = -10 V, IE = 0, f = 1 MHz 50 pF Base-emitter saturation voltage Collector output capacitance Note 2: hFE (1) Classification Cob A: 140 to 280, B: 200 to 400, C: 300 to 600 1 2004-07-07 2SA1160 Marking A1160 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1160 IC - VCE IC - VBE -4 -100 -10 -2 -5 -3 -1 -2 -3 -0.8 -1.6 -2.4 Collector-emitter voltage Ta = 100C (V) -0.4 -0.8 1000 Ta = 100C 25 300 -25 100 30 -0.01 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE VCE = -1 V -0.3 -0.1 Ta = 100C -0.05 -0.03 25 -25 -0.01 -0.03 -0.1 -0.3 -1 -3 -5 -0.01 -0.03 -0.1 -0.3 -3 -1 -5 Collector current IC (A) Safe Operating Area PC - Ta -10 PC (W) 1.6 IC max (pulsed)* 10 ms* IC max (continuous) Collector power dissipation 100 ms* IC (A) (V) Common emitter -0.5 IC/IB = 40 Collector current IC (A) Collector current VBE -2.0 -1 Common emitter -1 -0.5 -1.6 VCE (sat) - IC hFE - IC -5 -1.2 Base-emitter voltage 3000 -3 -25 -1 0 0 -4.0 -3.2 VCE -2 25 IB = -1 mA 0 0 0 Common emitter VCE = -1 V IC (A) -20 Collector current Collector current Common emitter Ta = 25C -30 -3 IC (A) -50 -4 DC operation Ta = 25C -0.3 * : Single nonrepetitive pulse Ta = 25C Curves must be derated -0.1 linearly with increase in temperature. -0.05 -0.1 -0. 3 -1 1.2 0.8 0.4 VCEO max -3 Collector-emitter voltage -10 VCE 0 0 -30 (V) 40 80 120 Ambient temperature 3 160 Ta 200 (C) 2004-07-07 2SA1160 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07