2SA1160
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
• Low saturation voltage
: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −20 V
Collector-emitter voltage VCEO −10 V
Emitter-base voltage VEBO −6 V
DC IC −2
Collector current
Pulsed (Note 1) ICP −4
A
Base current IB −2 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characte ristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −20 V, IE = 0 ⎯ ⎯ −100 nA
Emitter cut-off current IEBO V
EB = −6 V, IC = 0 ⎯ ⎯ −100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V
Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −6 ⎯ ⎯ V
DC current gain hFE (1)
(Note 2) VCE = −1 V, IC = −0.5 A 140 ⎯ 600
Collector-emitter saturation voltage hFE (2) V
CE = −1 V, IC = −4 A 60 120 ⎯
Base-emitter saturation voltage VCE (sat) I
C = −2 A, IB = −50 mA ⎯ −0.20 −0.50 V
Base-emitter voltage VBE V
CE = −1 V, IC = −2 A ⎯ −0.83 −1.5 V
Transition frequency fT V
CE = −1 V, IC = −0.5 A ⎯ 140 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 50 ⎯ pF
Note 2: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
2SA1160
2004-07-07
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Mark ing
A1160
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1160
2004-07-07
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
IC – VBE
Base-emitter voltage VBE (V)
DC current gain hFE
Collector current IC (A)
hFE – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Common emitter
Ta = 25°C
0
0
−4
−1
IB = −1 mA
−2
−3
−0.8 −1.6 −2.4
−50
0
−30
−20
−100
−4.0
−5
−10
−3
−2
−3.2
Common emitter
VCE = −1 V
0
0
−4
−1
Ta = 100°C
−2
−3
−0.4 −0.8 −1.2 −1.6 −2.0
25
−25
1.6
0
0 40 80 120 160
0.4
0.8
1.2
200
−0.01
3000
30
Ta = 100°C
100
300
1000
−0.03 −0.1 −0.3 −1 −3
25
−25
−5
Common emitter
VCE = −1 V
* : Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−3
−0.05
−0.5
−0.1
−0.3
−0.1 −0. 3 −1 −3 −10 −30
VCEO max
10 ms*
100 ms*
−1
−5
−10
IC max (continuous)
IC max (pulsed)*
DC operation
Ta = 25°C
−1
−0.01
−0.5
−0.03
−0.05
−0.1
−0.3
−0.01 −0.03 −0.1 −0.3 −1 −5
Ta = 100°C
−25
25
Common emitter
IC/IB = 40
−3
2SA1160
2004-07-07
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030619EAA
RESTRICTIONS ON PRODUCT USE
