FSBB30CH60CT Motion SPM® 3 Series
January 2014
©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FSBB30CH60CT Rev. C3
FSBB30CH60CT
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC Sub-
strate
• Built-In Bootstrap Diodes and De dicated Vs Pins Sim-
plify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
•AN-9044 - Motion SPM® 3 Seri es Users Guide
General Description
FSBB30CH60CT is an advanced Motion SPM® 3 mod-
ule providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC, and PMSM
motors. These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while a lso
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, and
fault reporting. The built-in, high-speed HVIC requires
only a single supp ly voltage and translates the incoming
logic-level gate inputs to the high-voltage, high-current
drive signals required to properly drive the module's
internal IGBTs. Separate negative IGBT terminals are
available for each phase to support the widest variety of
control algorithms.
Package Mark ing and Ordering Information
Figure 1. Package Overview
Device Device Marking Package Packing Type Quantity
FSBB30CH60CT FSBB30CH60CT SPMCC-027 Rail 10
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Integrated Power Functions
• 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3 )
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high- voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Pin Descriptions
Pin Number Pin Name Pin Description
1V
CC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
3IN
(UL) Signal Inpu t for Low-Side U-Phase
4IN
(VL) Signal Input for Low-Side V-Phase
5IN
(WL) Signal Input for Low-Side W-Phase
6V
FO Fault Output
7C
FOD Capacitor for Fault Output Duration Selection
8C
SC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
9IN
(UH) Signal Input for High-Side U-Phase
10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
13 IN(VH) Signal Input for High-Side V-Phase
14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving
17 IN(WH) Signal Input for High-Side W-Phase
18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
21 NUNegative DC-Link Input for U-Phase
22 NVNegative DC-Link Input for V-Phase
23 NWNegative DC-Link Input for W-Phase
24 U Output for U-Phase
25 V Output for V-Phase
26 W Output for W-Phase
27 P Positive DC-Link Input
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (21)
NV (22)
NW (23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W)
(19) VB(W)
(16) VS(V)
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN(VH)
(12) VS(U)
(11) VB(U)
(10) VCC(H)
(9) IN(UH)
VSL
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150C (at TC 125C).
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
2nd Notes:
2. For the measurement point of case temp erature (TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW500 V
VCES Collector - Emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C, TJ 150°C 30 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width 60 A
PCCollector Dissipation TC = 25°C per Chip 78 W
TJOperating Junction Temperature (2nd Note 1) - 40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM -0.3 ~ VCC + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V
IFO Fault Output Current Sink Current at VFO pin 5 mA
VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V
Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C, TJ 150°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, TJ 150°C Under 1 ms Pulse
Width 2.0 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s400 V
TCModule Case Operation Temperature -40CTJ 150C, See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate 2500 Vrms
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module) - - 1.60 °C / W
Rth(j-c)F Inverter FWDi Part (per 1 / 6 module) - - 2.40 °C / W
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
3. tON and tOFF include the prop ag ation delay of the intern al dr iv e IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Control Part
2nd Notes:
4. Short-ci rcuit protection is functioning only at the low-s ides.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F]
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation
Voltage VCC = VBS = 15 V
VIN = 5 V IC = 30 A, TJ = 25°C - 2.0 2.6 V
VFFWDi Forward Voltage VIN = 0 V IF = 30 A, TJ = 25°C - 1.9 2.5 V
HS tON Switching Times VPN = 300 V, VCC = VBS = 15 V
IC = 30 A
VIN = 0 V 5 V, Inductive Load
(2nd Note 3)
-0.75- s
tC(ON) -0.2- s
tOFF -0.4- s
tC(OFF) -0.1- s
trr -0.1- s
LS tON VPN = 300 V, VCC = VBS = 15 V
IC = 30 A
VIN = 0 V 5 V, Inductive Load
(2nd Note 3)
-0.55- s
tC(ON) -0.35- s
tOFF -0.4- s
tC(OFF) -0.1- s
trr -0.1- s
ICES Collector - Emitter Leakage
Current VCE = VCES --1mA
Symbol Parameter Conditions Min. Typ. Max. Unit
IQCCL Quiescent VCC Supply
Current VCC = 15 V
IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA
IQCCH VCC = 15 V
IN(UH, VH, WH) = 0 V VCC(H) - COM - - 600 A
IQBS Quiescent VBS Supply
Current VBS = 15 V
IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
- - 500 A
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V
VSC(ref) Short-Circuit Current
Trip Level VCC = 15 V (2nd Note 4) 0.45 0.50 0.55 V
TSD Over-Temperature
Protection Temperature at LVIC - 160 - °C
TSD Over-Temperature
Protection Hysterisis Temperature at LVIC - 5 - °C
UVCCD Supply Circuit
Under-Voltage Protection Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.4 V
UVBSD Detection Level 10 11 12 V
UVBSR Reset Level 10.5 11.5 12.5 V
tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL),
IN(VL), IN(WL) - COM 2.8 - - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Figure 4. Switching Time Definition
Figure 5. Switching Loss Characteristics (Typical)
VCE IC
VIN
tON tC(ON)
VIN(ON) 10% IC10% VCE
90% IC
100% IC
trr
100% IC
0
VCE
IC
VIN
tOFF tC(OFF)
VIN(OFF) 10% V CE 10% IC
(a) tu rn-on (b ) tu rn -of f
0 3 6 9 12 15 18 21 24 27 30 33
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200 SWITCHING LOSS(ON) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
T J=25℃
T J=150℃
SWITCHING LOSS, ESW(ON) [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
0 3 6 9 12 15 18 21 24 27 30 33
0
100
200
300
400
500
600
700
800
900 SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
TJ=25℃
TJ=150℃
SWITCHING LOSS, ESW(OFF) [uJ]
COLLECTOR CURRENT, Ic [AMP ER ES ]
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Bootstrap Diode Part
Figure 6. Built-in Bootstrap Diode Characteristics
2nd Notes:
6. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V
trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
13.0 15.0 18.5 V
dVCC / d t,
dVBS / dt Control Supply Variation -1 - 1 V / s
tdead Blanking Time for Preventing
Arm-Short Each Input Signal 2 - - s
fPWM PWM Input Signal -40C TC 125°C, -40C TJ 150°C - - 20 kHz
VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM
(Including Surge Voltage) -4 4 V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 Built-in Bootstrap Diode VF-IF C ha racteristic
TC=25oC
IF [A]
VF [V]
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Mechanical Characteristics and Ratings
Figure 7. Flatness Measurement Position
Parameter Conditions Min. Typ. Max. Unit
Mounting Torque Mounting Screw: M3 Recommended 0.62 N•m 0.51 0.62 0.80 N•m
Device Flatness See Figure 7 0 - +150 m
Weight - 15.00 - g
( + )
( + )
( + )
( + )
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Time Charts of Protective Function
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-Side)
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current.
Figure 9. Under-Voltage Protection (High-Side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1 a3
a2 a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1 b3
b2 b4 b6
b5
High-level (no fault output)
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “LOW”: IGBT OFF state.
c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
Figure 10. Short-Circuit Protection (Low- Side Operation Only)
Internal IGBT
Gate - Emitter Voltage
Lower Arms
Control Input
Output Current
Sensing Voltage
of Shunt Resistance
Fault Output Signal
SC Reference Voltage
CR Circuit Time
Constant Delay
SC
Protection
Circuit State SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Figure 11. Recommended MCU I/O Interface Circuit
3rd Notes:
1. RC coupling at ea ch inpu t migh t chan ge de pendin g on the P WM cont rol sche me in the application and th e wir ing im pedan ce of the application’ s printe d circuit board. The input
signal section of the Motion SPM® 3 product integr ates a 5 k(typ.) pull -down res istor. Therefore, when u sing an e xternal filt ering resist or, please pay attent ion to the sig nal
voltage drop at input termin al.
2. The logic input works with standard CMOS or LSTTL outputs.
Figure 12. Recommended Bootstrap Operation Circuit and Parame ters
3rd Notes:
3. The ceramic capacitor placed between V CC - COM should be over 1 F and mounted as close to th e pins of the Motion SPM 3 product as possible.
MCU
SPM
COM
+5 V
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
1 nF CPF = 1 nF
RPF = 4.7 ㏀
100 Ω
100 Ω
1 nF 1 nF
100 Ω
15 V 22 µF0.1 µF
1000 µF1 µF
One-Leg Diagram of
Motion SP M 3 P roduct
Inverter
Output
P
N
These values depend on PWM control algorithm.
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
VSL
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 13 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Figure 13. Typical Application Circuit
4th Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm).
2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 3 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance (please refer to
Figure11).
4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5. VFO output pulse width sh ou ld be d ete rm ine d b y con ne cting an external cap acitor ( C FOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = 1.8 ms
(typ.)) Please refer to the 2nd note 5 for calculation method.
6. Input signal is active-HIGH type. There is a 5 k resistor insi de the I C to pull down eac h inp ut si gnal lin e to GND. RC cou pling circ uit s sh ould be u sed t o pre vent inpu t si gnal
oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 Ω, CPS = 1 nF).
7. To prevent errors of the protection function , the wiring around RF and CSC should be as short as possible.
8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 s.
9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended.
11 . Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12. CSPC15 should be over 1 F and moun ted as close to the pins of the Motion SPM 3 product as possible.
Fault
+15 V
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
CFOD
+5 V
RPF
CBPF
RS
M
Vdc
CDCS
Gating UH
Gating VH
Gating WH
Gating W L
Gating VL
Gating UL
CPF
M
C
U
RFU
RFV
RFW
RSU
RSV
RSW
CFU
CFV
CFW
W-Pha se Current
V-Phase Current
U-Phase Current
RF
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU(21)
NV(22)
NW(23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W)
(19) VB(W)
(16) VS(V)
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN (WL)
(4) IN(VL)
(3) IN (UL)
(2) C OM
(1) VCC(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN (VH)
(12) VS(U)
(11) VB(U)
(10) VCC(H)
(9) IN (UH)
Input Signal for
Short-Circuit Protection
CSC
VSL
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS CPS CPS
FSBB30CH60CT Motion SPM® 3 Series
©2012 Fairchild Semiconductor Corporation 14 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf
©2012 Fairchild Semiconductor Corporation 15 www.fairchildsemi.com
FSBB30CH60CT Rev. C3
