40TPS16PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A DESCRIPTION/FEATURES 2 (A) TO-247AC 1 (K) (G) 3 PRODUCT SUMMARY VT at 40 A < 1.45 V ITSM 500 A VRRM 1600 V The 40TPS16PbF High Voltage Series of silicon Pb-free controlled rectifiers are specifically designed for Available medium power switching and phase control RoHS* applications. The glass passivation technology COMPLIANT used has reliable operation up to 125 C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix). MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES Sinusoidal waveform UNITS 35 A IRMS 55 VRRM/VDRM 1600 V ITSM 500 A 1.45 V dV/dt 1000 V/s dI/dt 100 A/s - 40 to 125 C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 C mA 1600 1700 10 VT 40 A, TJ = 25 C TJ VOLTAGE RATINGS PART NUMBER 40TPS16PbF * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94389 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 40TPS16PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch TEST CONDITIONS VALUES TC = 79 C, 180 conduction half sine wave 55 IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Low level value of threshold voltage VT(TO)1 High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 10 ms sine pulse, rated VRRM applied A 500 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied UNITS 35 600 Initial TJ = TJ maximum 1250 10 ms sine pulse, no voltage reapplied 1760 t = 0.1 to 10 ms, no voltage reapplied 12 500 1.02 1.23 TJ = 125 C 9.74 7.50 A2s A2s V m Maximum peak on-state voltage VTM 110 A, TJ = 25 C 1.85 V Maximum rate of rise of turned-on current dI/dt TJ = 25 C 100 A/s Maximum holding current IH Maximum latching current IL Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage IRRM/IDRM 150 300 TJ = 25 C TJ = 125 C 0.5 VR = Rated VRRM/VDRM mA 10 dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open 1000 V/s SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage PGM 10 PG(AV) 2.5 IGM 2.5 - VGM 10 TJ = - 40 C Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD TJ = 25 C 4.0 Anode supply = 6 V resistive load TJ = 125 C 1.7 TJ = - 40 C 270 TJ = 25 C 150 TJ = 125 C 80 TJ = 25 C, for 40TPS08A www.vishay.com 2 2.5 TJ = 125 C, VDRM = Rated value For technical questions, contact: diodes-tech@vishay.com W A V mA 40 0.25 V 6 mA Document Number: 94389 Revision: 06-Jun-08 40TPS16PbF High Voltage Series Phase Control SCR, 35 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device Document Number: 94389 Revision: 06-Jun-08 UNITS - 40 to 125 C 0.6 C/W 40 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Case style TO-247AC For technical questions, contact: diodes-tech@vishay.com 40TPS16 www.vishay.com 3 40TPS16PbF High Voltage Series Maximum Averag e On-state Power Loss (W) 130 40TPS.. Series R thJC (DC) = 0.6 C/ W 120 110 Conduction Angle 100 30 60 90 90 120 180 80 70 0 10 20 30 DC 180 120 90 60 30 70 60 50 40 RMSLimit 30 Conduction Period 20 40TPS.. Series TJ = 125 C 10 0 0 10 20 30 40 50 60 Average On-state Current (A) Avera ge On-sta te Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics 130 40TPS.. Series RthJC (DC) = 0.6 C/ W 120 110 Conduction Period 100 30 90 60 90 120 180 80 DC 70 0 10 20 30 40 50 60 RMS Limit 30 20 Conduction Angle 40TPS.. Series TJ= 125C 10 0 0 5 10 15 20 25 30 35 40 Peak Half Sine Wa ve On-state Current (A) 40 500 450 400 350 300 40TPS.. Series 250 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 60 50 At Any Ra ted Load Condition And With Rated V RRM Ap plied Following Surge. Initia l TJ= 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 1 Fig. 2 - Current Rating Characteristics 180 120 90 60 30 550 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) Maximum Avera g e On-state Power Loss (W) 80 40 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Vishay High Power Products Phase Control SCR, 35 A 600 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reap p lied Rated VRRM Reap p lied 550 500 450 400 350 300 40TPS.. Series 250 0.01 0.1 1 Avera ge On-sta te Current (A) Pulse Tra in Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94389 Revision: 06-Jun-08 40TPS16PbF High Voltage Series Phase Control SCR, 35 A Vishay High Power Products Instanta neous On-sta te Current (A) 100 10 TJ= 25C TJ= 125C 40TPS.. Series 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) 1 TJ = -40 C TJ = 125 C TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 40TPS.. 0.01 0.1 Frequenc y Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Transient Thermal Impeda nc e Z thJC (C/W) Fig. 8 - Gate Characteristics 1 0.1 Steady State Value (DC Opera tion) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 40TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94389 Revision: 06-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 40TPS16PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A ORDERING INFORMATION TABLE Device code 40 T P S 16 PbF 1 2 3 4 5 6 1 - 2 - Current rating (40 = 40 A) Circuit configuration: T = Thyristor 3 - 4 - 5 - 6 - Package: P = TO-247 Type of silicon: S = Standard recovery rectifier Voltage rating (16 = 1600 V) None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95024 Part marking information http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94389 Revision: 06-Jun-08 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) O P E B (2) R/2 N A2 S (Datum B) O K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1