2729GN-150 Rev 1 2729GN - 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 330 W Device Dissipation @ 25C Maximum Voltage and Current 150 V Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d R/L VSWR-T jc * Characteristics Output Power Power Gain Drain Efficiency Input Return Loss Load Mismatch Tolerance Thermal Resistance Test Conditions Pin=8W, Freq=2.7, 2.8, 2.9 GHz Pin=8W, Freq=2.7, 2.8, 2.9 GHz Pin=8W, Freq=2.7, 2.8, 2.9 GHz Pin=8W, Freq=2.7, 2.8, 2.9 GHz Pout=150W, Freq= 2.7 GHz Pulse Width=100uS, Duty=10% Min 150 12.7 50 -9 Typ 165 13.2 60 Max 5:1 1.1 Units W dB % dB C/W Bias Condition: Vdd=+60V, Idq=250mA peak current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 2mA 2.5 2 250 mA mA V Issue July 2011 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729GN-150 Rev 1 2729GN - 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz Typical Performance Data: Frequency Pin (W) 2700 MHz 2800 MHz 2900 MHz 8 8 8 Pout (W) Id (A) RL (dB) Nd (%) G (dB) 152 155 168 0.42 0.40 0.38 -11 -12 -10 12.8 12.8 13.2 60 64 74 M odel 2729GN-150: Pin vs. Pout & Gain 20 180 160 18 140 16 100 80 14 Gp (dB) Pout (W) 120 60 40 12 20 0 10 3.0 4.0 5.0 6.0 7.0 Pin (W ) 8.0 2.7GHz 9.0 2.8GHz 2.9GHz Model 2729GN-150: Pin vs. Efficiency Efficiency (%) 100% 80% 60% 40% 20% 0% 3.0 4.0 5.0 6.0 Pin (W) 7.0 8.0 2.7GHz 2.8GHz 9.0 2.9GHz MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729GN-150 Rev 1 2729GN - 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz Transistor Impedance Information Impedance Data Freq (GHz) Zs Zl 2.7 5.62 - j11.20 5.28 - j3.20 2.8 5.27 - j10.74 5.37 - j2.74 2.9 4.94 - j10.34 5.49 - j2.28 Note: Z in is looking into the input circuit; Z Load is looking into the output circuit. MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729GN-150 Rev 1 2729GN - 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz Test Circuit Diagram Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 2729GN-150 Rev 1 2729GN - 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz 55-QP Package Dimension Dimension A B C D E F G H I J K L Min (mil) 213 798 560 258 43 226 235 235 60 81 116 4 Min (mm) 5.41 20.26 14.22 6.55 1.09 5.74 5.96 5.96 1.52 2.06 2.94 .102 Max (mil) 217 802 564 362 47 230 239 239 62 82 118 6 Max (mm) 5.51 20.37 14.32 9.19 1.19 5.84 6.07 6.07 1.57 2.08 2.99 .152 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.