2729GN-150 Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
GENERAL DESCRIPTION
The 2729GN-150 is an internally matched, COMMON SOURCE, class AB
GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF
output power at 100µs pulse width, 10% duty factor across the 2700 to 2900
MHz band. The transistor has internal pre-match for optimal performance. This
hermetically sealed transistor is specifically designed for S-band radar
applications. It utilizes gold metallization and eutectic attach to provide highest
reliability and superior ruggedness.
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissi pa tion
Device Dissipation @ 25°C 330 W
Maximum Voltage an d Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Tempe r at u r e s
Storage Temperature (TSTG) -55 to +125 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pin=8W, Freq=2.7, 2.8, 2.9 GHz 150 165 W
Gp Power Gain Pin=8W, Freq=2.7, 2.8, 2.9 GHz 12.7 13.2 dB
ηd Drain Efficiency Pin=8W, Freq=2.7, 2.8, 2.9 GHz 50 60 %
R/L Input Return Loss Pin=8W, Freq=2.7, 2.8, 2.9 GHz -9 dB
VSWR-T Load Mismatch Tolerance Pout=150W, Freq= 2.7 GHz 5:1
Өjc Thermal Resistance Pulse Width=100uS, Duty=10% 1.1 °C/W
• Bias Condition: Vdd=+60V, Idq=250mA pea k current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERIS TICS @ 25°C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 2.5 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 2 mA
BVDSS Drain-source breakdown voltage Vgs =-8V, ID = 2mA 250 V
Issue July 2011
2729GN – 150
150 Watts - 60 Volts, 100 μs, 10%
Radar 2700 - 2900 MHz
2729GN-150 Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
Typical Performance Data:
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB)
2700 MHz 8 152 0.42 -11 60 12.8
2800 MHz 8 155 0.40 -12 64 12.8
2900 MHz 8 168 0.38 -10 74 13.2
Model 2729G N-150: P in vs. Pout & Gain
0
20
40
60
80
100
120
140
160
180
3.0 4.0 5.0 6.0 7.0 8.0 9.0
Pin (W )
Pout (W)
10
12
14
16
18
20
Gp (dB)
2.7GHz 2.8GHz 2.9GHz
Model 2729GN-150: Pin vs. E ff iciency
0%
20%
40%
60%
80%
100%
3.0 4.0 5.0 6.0 7.0 8.0 9.0
Pi n (W)
Eff i ci ency ( % )
2.7GHz 2.8GHz 2.9GHz
2729GN – 150
150 Watts - 60 Volts, 100 μs, 10 %
Radar 2700 - 2900 MHz
2729GN-150 Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
Transistor Impedance Information
Impedance Data
Freq (GHz) Zs Zl
2.7 5.62 – j11.20 5.28 – j3.20
2.8 5.27 – j10.74 5.37 – j2.74
2.9 4.94 – j10.34 5.49 – j2.28
Note: in
Z is looking into the input circuit;
Load
Z is looking into the output circuit.
2729GN – 150
150 Watts - 60 Volts, 100 μs, 10 %
Radar 2700 - 2900 MHz
2729GN-150 Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
Test Circuit Diagram
Board Material: Roger Duroid 6002 @ 20 mils thickness, 1 oz Cu, Er = 2.9
2729GN – 150
150 Watts - 60 Volts, 100 μs, 10 %
Radar 2700 - 2900 MHz
2729GN-150 Rev 1
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
55-QP Package Dimension
Dimension Min (mil) M in (mm) Max (mil) Ma x (mm)
A 213 5.41 217 5.51
B 798 20.26 802 20.37
C 560 14.22 564 14.32
D 258 6.55 362 9.19
E 43 1.09 47 1.19
F 226 5.74 230 5.84
G 235 5.96 239 6.07
H 235 5.96 239 6.07
I 60 1.52 62 1.57
J 81 2.06 82 2.08
K 116 2.94 118 2.99
L 4 .102 6 .152
2729GN – 150
150 Watts - 60 Volts, 100 μs, 10 %
Radar 2700 - 2900 MHz
