D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-2 Package devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 1200V Low Conduction Loss : VCE(sat) = 1.8 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-2 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 1200 V VGES Gate-Emitter Voltage - 20 V IC Collector Current Tc = 25 275 A Tc = 80 200 A - 400 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current Tc = 100 200 A IFM Diode Maximum Forward Current - 400 A TSC Short Circuit Withstand Time Tc = 100 10 uS PD Maximum Power Dissipation Tc = 25 1350 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds - 260 4.0 N.m 2.0 N.m Mounting screw Torque :M6 Power terminals screw Torque :M5 - Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 1.0mA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 1200 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =5.0mA , VCE = VGE 5 - 8 V ICES Collector cutoff Current VCE = 1200V , VGE = 0V - - 2.0 mA IGES G - E leakage Current VGE =20V - - 300 nA VCE(sat) Collector to Emitter IC=200A, VGE=15V @TC= 25 - 1.8 2.75 V saturation voltage IC=200A, VGE=15V @TC=100 - 2.0 - V Cies Input capacitance VGE = 0V , f = 1 - 15 - nF Coes Output capacitance VCE = 25V - 1.1 - nF Cres Reverse transfer capacitance - 0.7 - nF td(on) Turn on delay tim e VCC = 600V , IC = 200A - 180 - nS Turn on rise time VGE = 15V - 85 - nS Turn off delay tim e RG = 5.1 - 520 - nS Turn off fall time Inductive Load=60nH - 100 - nS tr td(off) tf Min. Eon Turn on Switching Loss - 13 - mJ Eoff Turn off Switching Loss - 9 - mJ Ets Total Switching Loss - 22 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 600V, VGE = 15V RG =5.1 @TC = 100 Qg Total Gate Charge VCC = 600V - 1400 - nC Qge Gate-Emitter Charge VGE = 15V - 250 - nC Qgc Gate-Collector Charge IC = 200A - 800 - nC Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=200A Min. Typ. Max. Tc =25 - 2.3 3.0 Tc =100 - 2.1 - Diode Reverse IF=200A, VR=600V Tc =25 - 200 - Recovery Tim e di/dt= -200A/uS Tc =100 - 220 - Diode Peak Reverse Tc =25 - 75 - Recovery Current Tc =100 - 90 - Diode Reverse Tc =25 - 3000 - Recovery Charge Tc =100 - 12500 - Unit V nS A nC Thermal Characteristics and Weight Values Symbol Parameter Conditions Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.09 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.22 /W RCS Case-to-Sink ( Conductive grease applied) 0.025 - - /W Weight Weight of Module - - 250 g Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 Performance Curves 400 Common Emitter TC=25 20V 15V Common Emitter TC=125 12V Collector Current, IC [A] Collector Current, IC [A] 400 300 10V 200 100 20V 15V 12V 300 10V 200 100 V GE=8V V GE = 8V 0 0 0 1 2 3 0 4 1 Collector - Emitter Voltage, VCE [V] 2 3 4 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 300 300 Load Current [A] Collector Current, IC [A] 250 T C=25 200 T C=125 100 200 150 100 Duty cycle = 50% TC=125 Power Dissipation = 250W 50 0 0 0 1 2 0.1 3 1 Collector - Emitter Voltage, VCE [V] 20 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 4. Load Current vs. Frequency Common Emitter TC=25 15 10 200A 5 300A IC=150A 0 0 5 10 15 100 Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics 20 10 20 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Common Emitter TC=125 15 10 200A 5 300A IC=150A 0 0 5 10 15 Gate - Emitter Voltage, VGE [V] Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 20 D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 20 Gate - Emitter Voltage, VGE [V] 100 Capacitance [pF] Cies 10 Coes Cres 1 Common Emitter VGE=0V, f=1MHZ TC=25 0.1 0 Common Emitter VCE=600V, IC=200A TC=25 15 V CC=600V V CC=800V 10 5 0 20 40 60 80 0 100 0.2 0.4 Collector - Emitter Voltage, VCE [V] 1 1.2 1.4 Fig 8. Gate Charge characteristics 400 2000 TJ = 150 VGE 15V TJ 150 PD = f(Tc) 1500 PD [ W ] 300 Ic [ A ] 0.8 Gate Charge, Qg [nC] Fig 7. Capacitance characteristics 350 0.6 250 200 1000 150 500 100 50 0 0 0 20 40 60 80 100 120 140 0 160 20 40 60 80 120 140 160 Tc [ ] Tc [ ] Fig 10. Power Dissipation vs. Case Temperature Fig 9. rated Current vs. Case Temperature 400 1 350 Forward Current, IF [A] Thermal Response Zthjc [/W] 100 0.1 0.01 0.001 1.E-05 IGBT : DIODE : TC=25 2.E-01 4.E-01 6.E-01 8.E-01 300 250 200 T C=125 150 T C=25 100 50 0 1.E+00 Rectangular Pulse Duration Time [sec] Fig 11. Transient Thermal Impedance 0 1 2 3 4 Forward Drop Voltage, VF [V] Fig 12. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 5 D W DAWIN Electronics Preliminary TM DM2G200SH12AE Apr. 2008 Package Out Line Information 7DM-2 Dimensions in mm 940.3 800.3 230.5 230.5 M5 DP7 130.3 5 4 110.5 1 100.2 100.2 LABEL PLATE 190.5 2.80.05 MAX 31 100.2 480.5 70.2 220.5 10.05 Bolt Depth 10.80.05 70.2 160.2 6.80.5 480.5 3 7 6 2 40.3 180.5 40.3 6.4 0.2 91.50.5 Copyright@Dawin Electronics Corp. All right reserved 45.50.5