A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 100 mA 18
BVEBO IE = 10 mA 4.0 V
ICES VCE = 12.5 V 15 mA
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0 MHz 380 pF
PG
η
ηη
ηC VCE = 12.5 V POUT = 80 W f = 175 MHz 7.0
60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB80-12
DESCRIPTION:
The ASI VHB80-12 is Designed for
Class C, 12.5 V Hig h Band
Applications up to 175 MHz.
FEATURES:
• Internal I nput Matching Network
• PG = 7.0 dB at 80 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
VCBO 36 V
VCEO 16 V
VCES 36 V
VEBO 4.0 V
PDISS 230 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.75 °C/W
PACKAGE STYLE .500 6L FLG
ORDER CODE: ASI10718
MINIMUM
inch es / m m
.490 / 12.45
.210 / 5.33
.003 / 0.08
B
C
D
E
F
G
A
MAXIMUM
.220 / 5.59
.007 / 0.18
.510 / 12.95
inch es / m m
.725 / 18.42
H
DIM
K
L
I
J.970 / 24.64 .980 / 24.89
.170 / 4.32
N
M.120 / 3.05 .135 / 3.43
.150 / 3.43 .160 / 4.06
.125 / 3.1 8
.090 / 2.29 .105 / 2.67
.285 / 7.24
.150 / 3.81
.045 / 1.1 4
E
F
.725/18,42
I
G
J
KL
M
A
D
C
B
2x ØN
FU LL R
H
.835 / 21.21 .865 / 21.97
.210 / 5.33.200 / 5.08
