1SS226 Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications * Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 S-Mini Start of commercial production (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 1 1982-09 2018-11-16 Rev.4.0 1SS226 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Peak reverse voltage Note Rating Unit V VRM 85 Reverse voltage VR 80 Peak forward current IFM (Note 1) 300 Average rectified current IO (Note 1) 100 PD (Note 2) 150 mW IFSM (Note 1), (Note 3) 2 A Power dissipation Non-repetitive peak forward surge current Junction temperature Tj 125 Storage temperature Tstg -55 to 125 mA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating x 70% Note 2: Mounted on a glass epoxy circuit board of 20 mm x 20 mm, Pad dimension of 4 mm x 4 mm. Note 3: Measured with a 10 ms pulse. 5. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Reverse current Symbol Test Condition Min Typ. Max Unit V VF(1) IF = 1 mA 0.60 VF(2) IF = 10 mA 0.72 VF(3) IF = 100 mA 0.90 1.20 IR(1) VR = 30 V 0.1 IR(2) A VR = 80 V 0.5 Total capacitance Ct VR = 0 V, f = 1 MHz 0.9 3.0 pF Reverse recovery time trr IF = 10 mA See Fig. 5.1. 1.6 4.0 ns Fig. 5.1 Reverse recovery time (trr) Test circuit (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 2 2018-11-16 Rev.4.0 1SS226 6. Marking Fig. 6.1 Marking 7. Land Pattern Dimensions (for reference only) Fig. 7.1 S-Mini (Unit: mm) (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 3 2018-11-16 Rev.4.0 1SS226 8. Characteristics Curves (Note) Note: Fig. 8.1 IF - VF Fig. 8.2 IR - VR Fig. 8.3 Ct - VR Fig. 8.4 PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 4 2018-11-16 Rev.4.0 1SS226 Package Dimensions Unit: mm Weight: 12 mg (typ.) Package Name(s) TOSHIBA: 2-3F1S Nickname: S-Mini (c)2017-2018 Toshiba Electronic Devices & Storage Corporation 5 2018-11-16 Rev.4.0 1SS226 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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