1SS226
1
Switching Diodes Silicon Epitaxial Planar
1SS226
1SS226
1SS226
1SS226
Start of commercial production
1982-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
Ultra-High-Speed Switching
2.
2.
2.
2. Features
Features
Features
Features
(1) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
S-Mini
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1SS226
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
PD
IFSM
Tj
Tstg
Note
(Note 1)
(Note 1)
(Note 2)
(Note 1), (Note 3)
Rating
85
80
300
100
150
2
125
-55 to 125
Unit
V
mA
mW
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min
Typ.
0.60
0.72
0.90
0.9
1.6
Max
1.20
0.1
0.5
3.0
4.0
Unit
V
µA
pF
ns
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (trr
rr
rr
rr) Test circuit
) Test circuit
) Test circuit
) Test circuit
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1SS226
3
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
7.
7.
7.
7. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 S-Mini (Unit: mm)
S-Mini (Unit: mm)
S-Mini (Unit: mm)
S-Mini (Unit: mm)
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1SS226
4
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
IF
F
F
F - V
- V
- V
- VF
F
F
FFig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
IR
R
R
R - V
- V
- V
- VR
R
R
R
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 C
C
C
Ct
t
t
t - V
- V
- V
- VR
R
R
RFig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 P
P
P
PD
D
D
D - T
- T
- T
- Ta
a
a
a
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1SS226
5
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 12 mg (typ.)
Package Name(s)
TOSHIBA: 2-3F1S
Nickname: S-Mini
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1SS226
6
https://toshiba.semicon-storage.com/
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
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and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
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CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products
(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2018-11-16
Rev.4.0
©2017-2018
Toshiba Electronic Devices & Storage Corporation