BD750L2FP3-C - ROHM SEMICONDUCTOR

BTM7700G

TrilithIC

Data Sheet, Rev. 1.0, June 2007

Automotive Power

Data Sheet 1 Rev. 1.0, 2007-06-12

BTM7700G

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.2 Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.3 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.4 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.5 Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4.6 Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table of Contents

PG-DSO-28-22

Type Package Marking

BTM7700G PG-DSO-28-22 BTM7700G

Data Sheet 1 Rev. 1.0, 2007-06-12

TrilithIC

BTM7700G

1 Overview

Features

• Quad D-MOS switch driver

• Free configurable as bridge or quad-switch

• Optimized for DC motor management applications

•Low RDS ON

High side: 110 mΩ typ. @ 25°C, 280 mΩ max. @ 150°C

Low side: 80 mΩ typ. @ 25°C, 200 mΩ max. @ 150°C

• Peak current: typ. 9.5 A @ 25 °C

• Very low quiescent current: typ. 5 µA @ 25 °C

• Small outline, enhanced power PG-DSO-package

• Operates up to 40 V

• PWM frequencies up to 1 kHz

• Load and GND-short-circuit-protection

• Overtemperature shut down with hysteresis

• Undervoltage detection with hysteresis

• Status flag diagnosis

• Internal clamp diodes

• Isolated sources for external current sensing

• Green Product (RoHS compliant)

•AEC Qualified

Description

The BTM7700G is part of the TrilithIC family containing three dies in one package: One double high-side switch

and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.

The sources are connected to individual pins, so the BTM7700G can be used in H-bridge- as well as in any other

configuration. The double high-side switch is manufactured in SMART SIPMOS® technology which combines low

RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low

RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.

Data Sheet 2 Rev. 1.0, 2007-06-12

BTM7700G

Description

2 Pin Configuration

2.1 Pin Assignment

Figure 1 Pin Assignment BTM7700G (Top View)

28 DL1

25 DL1

27 SL1

26 SL1

24 DHVS

23 SH1

22 SH1

21 SH2

20 SH2

19 DHVS

18 DL2

15 DL2

16 SL2

17 SL2

1DL1

5DHVS

4N.C.

3DL1

2IL1

6GND

7IH1

8ST

9IH2

10DHVS

DL2

N.C.

DL2

IL2

HS-Leadframe

LS-Leadframe

BTM7700G

Description

Data Sheet 3 Rev. 1.0, 2007-06-12

Pins written in bold type need power wiring.

Table 1 Pin Definitions and Functions

Pin No. Symbol Function

1, 3, 25, 28 DL1 Drain of low-side switch1, leadframe 11)

1) To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.

2IL1 Analog input of low-side switch1

4N.C. not connected

5, 10, 19, 24 DHVS Drain of high-side switches and power supply voltage, leadframe 21)

6GND Ground

7 IH1 Digital input of high-side switch1

8ST Status of high-side switches; open Drain output

9 IH2 Digital input of high-side switch2

11 N.C. not connected

12, 14, 15, 18 DL2 Drain of low-side switch2, leadframe 31)

13 IL2 Analog input of low-side switch2

16,17 SL2 Source of low-side switch2

20,21 SH2 Source of high-side switch2

22,23 SH1 Source of high-side switch1

26,27 SL1 Source of low-side switch1

Data Sheet 4 Rev. 1.0, 2007-06-12

BTM7700G

Description

2.2 Terms

Figure 2 Terms BTM7700G

Table 2

HS-Source-Current Named during Short Circuit Named during Leakage-Cond.

ISH1,2 ISCP H IDL LK

SH2

DHVS

IL1

GND

IH1

SL2

5,10,19,24

20,21

16,17

Biasing and Protection

22,23

1,3,25,28

IH2

IL2

26,27

12,14,15,18

SL1

DL2

SH1

DL1

GND

LKCL

=12V

100µF

470nF

FH1,2

SH2

DL2

SH1

DL1

DL LK 2

DL LK 1

DSL1

-V

FL1

DSL2

-V

FL2

-V

FH2

DSH2

-V

FH1

DSH1

UVON

UVOFF

SL2

SL1

SCP L 1

SCP L 2

IL2

IL th 2

IL1

IL th 1

STL

STZ

IH1

IH2

Gate

Driver

Gate

Driver

Diagnosis

ST LK

IH1

IL1

IL2

BTM7700G

Description

Data Sheet 5 Rev. 1.0, 2007-06-12

3 Block Diagram

Figure 3 Block Diagram BTM7700G

SH2

DHVS

IL1

GND

IH1

SL2

IH2

IL2

SL1

DL2

SH1

DL1

5,10,19,24

20,21

16, 17

Biasing and ProtectionDiagnosis

Driver

OUT

0 L L

0 1 L H

1 0 H L

1 1 H H

22, 23

1,3,25,28

26, 27

12,14,15,18

BTM7700G

Data Sheet 1 Rev. 1.0, 2007-06-12

4 Circuit Description

4.1 Input Circuit

The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are

driven by these stages and convert the logic signal into the necessary form for driving the power output stages.

The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard

N-channel vertical power-MOS-FETs.

4.2 Output Stages

The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body

diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as

single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by

integrated power clamp diodes.

4.3 Short Circuit Protection

The outputs are protected against short circuit to ground and short circuit over load

An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal

reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction

temperature and the drop voltage.

4.4 Overtemperature Protection

The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off

the output transistors and sets the status output to low.

4.5 Undervoltage Lockout

When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output

transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF.

4.6 Status Flag

The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the

application circuit in Figure 4 “Application Example BTM7700G” on Page 15. Various errors as listed in the

table “Diagnosis” are reported by switching the open drain output ST to low.

Data Sheet 2 Rev. 1.0, 2007-06-12

BTM7700G

Table 3 Truth table and Diagnosis (valid only for the High-Side-Switches)

Flag IH1 IH2 SH1 SH2 ST Remarks

Inputs Outputs

Normal operation;

identical with functional truth table

stand-by mode

switch2 active

switch1 active

both switches active

Overtemperature high-side switch1 0

detected

Overtemperature high-side switch2 X

detected

Overtemperature both high-side switches 0

detected

Under voltage X X L L 1 not detected

Inputs: Outputs: Status:

0 = Logic LOW Z = Output in tristate condition 1 = No error

1 = Logic HIGH L = Output in sink condition 0 = Error

X = don’t care H = Output in source condition

X = Voltage level undefined

BTM7700G

Data Sheet 3 Rev. 1.0, 2007-06-12

5 Electrical Characteristics

5.1 Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Absolute Maximum Ratings1)

– 40 °C < Tj < 150 °C

1) Not subject to production test; specified by design

Pos. Parameter Symbol Limit Values Unit Remarks

min. max.

High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)

5.1.1 Supply voltage VS– 0.3 42 V –

5.1.2 Supply voltage for full short circuit

protection

VS(SCP) –28 V

5.1.3 HS-drain current2)

2) Single pulse

IS– 7 3)

3) Internally limited

ATA = 25°C; tP < 100 ms

5.1.4 HS-input current IIH – 5 5mA Pin IH1 and IH2

5.1.5 HS-input voltage VIH – 10 16 VPin IH1 and IH2

Status Output ST

5.1.6 Status pull up voltage VST – 0.3 5.4 V

5.1.7+ Status Output current IST – 5 5mA Pin ST

5.1.8 Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)

5.1.9 Drain-Source-Clamp voltage VDSL 55 – V VIL = 0 V; ID ≤ 1 mA

Tj = 25°C

5.1.10 LS-drain current2) IDL – 7 6 A TA = 25°C; tP < 100 ms

5.1.11 – 8 A TA = 25°C; tP < 10 ms

5.1.12 –18 ATA = 25°C; tP < 1 ms

5.1.13 LS-input voltage VIL – 20 20 VPin IL1 and IL2

Temperatures

5.1.14 Junction temperature Tj– 40 150 °C –

5.1.15 Storage temperature Tstg – 55 150 °C –

ESD Protection4)

4) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)

5.1.16 Input LS-Switch VESD –0.3 kV

5.1.17 Input HS-Switch VESD – 1 kV

5.1.18 Status HS-Switch VESD – 2 kV

5.1.19 Output LS and HS-Switch VESD – 8 kV all other pins connected

to Ground

Data Sheet 4 Rev. 1.0, 2007-06-12

BTM7700G

5.2 Functional Range

Note: Within the functional range the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the related electrical characteristics table

5.3 Thermal Resistance

Pos. Parameter Symbol Limit Values Unit Remarks

min. max.

5.2.20 Supply voltage VSVUVOFF 42 VAfter VS rising above

VUVON

5.2.21 Input voltage HS VIH – 0.3 15 V –

5.2.22 Input voltage LS VIL – 0.3 20 V –

5.2.23 Status output current IST 0 2 mA –

5.2.24 Junction temperature Tj– 40 150 °C –

Pos. Parameter Symbol Limit Values Unit Conditions

Min. Typ. Max.

5.3.25 LS-junction to soldering point1)

1) Not subject to production test, specified by design.

RthJSP – – 20 K/W measured to pin 3 or 12

5.3.26 HS-junction to soldering point1) RthJSP – – 20 K/W measured to pin 19

5.3.27 Junction to Ambient1)

RthJA = Tj(HS) / (P(HS)+ P(LS))

RthJA –36 –K/W 2)

2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product

(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).

BTM7700G

Data Sheet 5 Rev. 1.0, 2007-06-12

5.4 Electrical Characteristics

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Pos. Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Current Consumption HS-switch

5.4.28 Quiescent current IS–59µAIH1 = IH2 = 0 V

Tj = 25 °C

– – 13 µAIH1 = IH2 = 0 V

5.4.29 Supply current;

one HS-switch active

IS– 1 2.5 mA IH1 or IH2 = 5 V

VS = 12 V

5.4.30 Supply current;

both HS-switches active

IS–25mA IH1 and IH2 = 5 V

VS = 12 V

5.4.31 Leakage current of

high-side switch

ISH LK ––6µAVIH = VSH = 0 V

VS = 12 V

5.4.32 Leakage current through logic GND

in free wheeling condition

ILKCL = IFH +

ISH

– – 10 mA IFH = 3 A

VS = 12 V

Current Consumption LS-switch

5.4.33 Input current IIL –10 100 nA VIL = 20 V;

VDSL = 0V

5.4.34 Leakage current of low-side switch IDL LK – – 10 µAVIL = 0 V

VDSL = 40V

Under Voltage Lockout HS-switch

5.4.35 Switch-ON voltage VUVON – – 4.8 VVS increasing

5.4.36 Switch-OFF voltage VUVOFF 1.8 –3.5 VVS decreasing

5.4.37 Switch ON/OFF hysteresis VUVHY – 1 – V VUVON – VUVOFF

Output stages

5.4.38 Inverse diode of high-side switch;

Forward-voltage

VFH –0.8 1.2 VIFH = 3 A

5.4.39 Inverse diode of low-side switch;

Forward-voltage

VFL –0.8 1.2 VIFL = 3 A

5.4.40 Static drain-source on-resistance of

high-side switch

RDS ON H –110 – mΩISH = 1 A; VS = 12 V

Tj = 25 °C

–200 280 mΩISH = 1 A; VS = 12 V

Tj = 150 °C

5.4.41 Static drain-source

on-resistance of low-side switch

RDS ON L –80 – mΩISL = 1 A; VIL = 5 V

Tj = 25 °C

–140 200 mΩISL = 1 A; VIL = 5 V

Tj = 150 °C

Data Sheet 6 Rev. 1.0, 2007-06-12

BTM7700G

Short Circuit of high-side switch to GND

5.4.42 Initial peak SC current

tdel = 100 µs; VS = 12 V; VDSH = 12V

ISCP H 911 13 ATj = – 40 °C

–9.5 – A Tj = + 25 °C

5.5 79ATj = + 150 °C

Short Circuit of high-side switch to VS

5.4.43 Output pull-down-resistor RO12 22 50 kΩVDSL = 3 V

Thermal Shutdown1)

5.4.44 Thermal shutdown junction

temperature

Tj SD 155 180 190 °C –

5.4.45 Thermal switch-on junction

temperature

Tj SO 150 170 180 °C –

5.4.46 Temperature hysteresis

∆Τ

–10 –°C

∆Τ

= TjSD – TjSO

Status Flag Output ST of high-side switch

5.4.47 Low output voltage VST L –0.2 0.6 VIST = 1.6 mA

5.4.48 Leakage current IST LK – – 10 µAVST = 5 V

5.4.49 Zener-limit-voltage VST Z 5.4 – – V IST = 1.6 mA

Switching times of high-side switch1)

5.4.50 Turn-ON-time to 90% VSH tON –75 160 µs RLoad = 12 Ω

VS = 12 V

5.4.51 Turn-OFF-time to 10% VSH tOFF –60 160 µs

5.4.52 Slew rate on 10 to 30% VSH dV/dtON – – 1.9 V/µs

5.4.53 Slew rate off 70 to 40% VSH -dV/dtOFF – – 2.7 V/µs

Switching times of low-side switch1)

5.4.54 Turn-ON Delay Time td(on) –5–ns resistive load

ISL= 3A; VDSL=12V

VIL = 5V; RG = 16Ω

5.4.55 Rise Time tr–22 –ns

5.4.56 Switch-OFF Delay Time td(off) –13 –ns

5.4.57 Fall Time tf–18 –ns

Gate charge of low-side switch1)

5.4.58 Input to source charge QIS –1–nC ISL = 3 A; VDSL=12 V

5.4.59 Input to drain charge QID –3–nC ISL = 3 A; VDSL=12 V

5.4.60 Input charge total QI– 7 15 nC ISL = 3 A; VDSL=12 V

VIL = 0 to 5 V

5.4.61 Input plateau voltage V(plateau) –2.8 - V ISL = 3 A; VDSL=12 V

1)Not subject to production test; specified by design

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Pos. Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

BTM7700G

Data Sheet 7 Rev. 1.0, 2007-06-12

Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical

characteristics specified mean values expected over the production spread. If not otherwise specified,

typical characteristics apply at TA = 25 °C and the given supply voltage.

Control Inputs of high-side switches IH 1, 2

5.4.62 H-input voltage VIH High – – 2.5 V –

5.4.63 L-input voltage VIH Low 1 – – V –

5.4.64 Input voltage hysteresis VIH HY –0.3 – V –

5.4.65 H-input current IIH High 15 30 60 µAVIH = 5 V

5.4.66 L-input current IIH Low 5 – 20 µAVIH = 0.4 V

5.4.67 Input series resistance RI2.7 45.5 kΩ–

5.4.68 Zener limit voltage VIH Z 5.4 ––VIIH = 1.6 mA

Control Inputs IL1, 2

5.4.69 Gate-threshold-voltage VIL th 0.9 1.7 2.35 VIDL = 0.5 mA

1) Not subject to production test; specified by design

ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V

unless otherwise specified

Pos. Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

BTM7700G

Data Sheet 1 Rev. 1.0, 2007-06-12

6 Application Information

Note: The following simplified application examples are given as a hint for the implementation of the device only

and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the

device. The function of the described circuits must be verified in the real application

Figure 4 Application Example BTM7700G

SH2

DHVS

IL1

GND

IH1

SL2

5,10,19,24

20,21

16,17

TLE

4278G

=12V

D01

Z39

10µF

47nF

Reset

Watchdog

22µF

WD R

GND

µP

Biasing and Protection

22,23

1,3,25,28

IH2

IL2

26,27

12,14,15,18

SL1

DL2

SH1

DL1

100 k

Ω

10 k

Ω

Gate

Driver

Gate

Driver

Diagnosis

XC866

BTM7700G

Green Product (RoHS compliant)

Data Sheet 1 Rev. 1.0, 2007-06-12

7 Package Outlines

Figure 5 PG-DSO-28-22 (Plastic Transistor Single Outline Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e

Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

114

1528

18.1-0.4

Index Marking

2.45

-0.1

7.6

10.3 ±0.3

-0.2

0.2

2.65 max

-0.2

1.27

0.23 +0.09

0.1

0.4

0.35 x 45˚

+0.8

+0.15

0.35 2)

8˚ max

0.2 28x

2) Does not include dambar protrusion of 0.05 max per side

1) Does not include plastic or metal protrusions of 0.15 max rer side

GPS05123

Dimensions in mm

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages.

BTM7700G

Data Sheet 1 Rev. 1.0, 2007-06-12

8 Revision History

Rev. Date Changes

1.0 2007-06-12 Initial Version

Edition 2007-06-12

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.