BUK9230-55A - NXP - Datasheet.Live

BUK9230-55A

N-channel TrenchMOS logic level FET

Rev. 04 — 15 June 2010 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive and general purpose

power switching

Motors, lamps and soleno ids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source

voltage Tj≥25 °C; Tj≤175°C --55V

IDdrain current VGS =5V; T

mb =25°C;

see Figure 1; see Figure 3 --38A

Ptot total power

dissipation Tmb = 25 °C; see Figure 2 --88W

Static characteristics

RDSon drain-source

on-state

resistance

VGS =4.5V; I

D=15A;

Tj=25°C --33mΩ

VGS =10V; I

D=15A;

Tj=25°C - 2327mΩ

VGS =5V; I

D=15A;

Tj=25°C;

see Figure 12; see Figure 13

- 2630mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=34A; V

sup ≤55 V;

RGS =50Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--57.8mJ

Product data sheet Rev. 04 — 15 June 2010 2 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 G gate

SOT428 (DPAK)

2 D drain

3Ssource

mb D mounting base; connected to

drain

mbb076

Table 3. Orderi ng information

Type number Package

Name Description Version

BUK9230-55A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped) SOT428

Product data sheet Rev. 04 — 15 June 2010 3 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

4. Limiting values

[1] Peak drain current is limited by chip, not package.

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175°C --55V

VDGR drain-gate voltage RGS =20Ω--55V

VGS gate-source voltage -10 - 10 V

IDdrain current Tmb =25°C; V

GS =5V; see Figure 1;

see Figure 3 --38A

Tmb =100°C; V

GS =5V; see Figure 1 --27A

IDM peak drain current Tmb =25°C; t

p≤10 µs; pu lsed;

see Figure 3 [1] - - 154 A

Ptot total power dissipation Tmb =25°C; see Figure 2 --88W

Tstg storage temperature -55 - 175 °C

Tjjunction temperature -55 - 175 °C

VGSM peak gate-source

voltage pulsed; tp≤50 µs -15 - 15 V

Source-drain diode

ISsource current Tmb =25°C --38A

ISM peak source current tp≤10 µs; pulsed; Tmb = 25 °C - - 154 A

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID=34A; V

sup ≤55 V; RGS =50Ω;

VGS =5V; T

j(init) = 25 ° C; unclamped - - 57.8 mJ

Product data sheet Rev. 04 — 15 June 2010 4 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

Fig 1. Normalized continuous drain current as a

function of mounting base temperature Fig 2. Normalized total po we r dissi pa tio n as a

function of mounting ba s e te mp e rature

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Tmb (°C)

0 20015050 100

03aa24

120

Ider

(%)

Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

03na89

102

103

1 10 102

VDS (V)

(A)

D.C.

100 ms

10 ms

RDSon = VDS / ID

1 ms

tp = 10 μs

100 μs

δ =

Product data sheet Rev. 04 — 15 June 2010 5 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

--1.7K/W

Rth(j-a) thermal resistance

from junction to

ambient

see Figure 4 - 71.4 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

03na90

Single Shot

0.2

0.1

0.05

0.02

10−2

10−1

10−610−510−410−310−210−1 1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

Product data sheet Rev. 04 — 15 June 2010 6 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=0.25mA; V

GS =0V; T

j=25°C 55--V

ID=0.25mA; V

GS =0V; T

j= -55 °C 50 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 11 --2.3V

ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 11 11.52V

ID=1mA; V

DS =V

GS; Tj= 175 °C;

see Figure 11 0.5--V

IDSS drain leakage current VDS =55V; V

GS =0V; T

j= 175 °C - - 500 µA

VDS =55V; V

GS =0V; T

j= 25 °C - 0.05 10 µA

IGSS gate leakage current VDS =0V; V

GS =10V; T

j= 25 °C - 2 100 nA

VDS =0V; V

GS =-10V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =4.5V; I

D=15A; T

j=25°C --33mΩ

VGS =10V; I

D=15A; T

j= 25 °C - 23 27 mΩ

VGS =5V; I

D=15A; T

j= 175 °C;

see Figure 12 ; see Figure 13 --60mΩ

VGS =5V; I

D=15A; T

j=25°C;

see Figure 12 ; see Figure 13 - 2630mΩ

Dynamic characteristics

Ciss input capacitance VGS =0V; V

DS =25V; f=1MHz;

Tj=25°C; see Figure 14 - 1294 1725 pF

Coss output capacitance - 210 252 pF

Crss reverse transfer

capacitance - 142 195 pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =5V;

RG(ext) =10Ω; Tj=25°C -14-ns

trrise time - 125 - ns

td(off) turn-off delay time - 64 - ns

tffall time - 68 - ns

LDinternal drain

inductance measured from drain lead from package

to centre of die ; Tj=25°C -2.5-nH

LSinternal source

inductance measured from source lead from

package to source bond pad ;

Tj=25°C

-7.5-nH

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 15 - 0.85 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs;

VGS =-10V; V

DS =30V; T

j=25°C -35-ns

Qrrecovered charge - 70 - nC

Product data sheet Rev. 04 — 15 June 2010 7 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

Fig 5. Output characteristics: drain current as a

function of drain-source volta ge; typ ical values Fig 6. Drain-source on-state re sistance as a function

of gate-source voltage; typical value s

Fig 7. Sub-threshold drain current as a function of

gate-source voltage Fig 8. Forward transconductance as a function of

drain current; typical values

03na86

120

160

0246810

VDS (V)

(A)

2.2

VGS (V) = 10 9

03na84

246810

VGS (V)

RDSon

(mΩ)

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

(A)

maxtypmin

03na85

020406080

ID (A)

gfs

(S)

Product data sheet Rev. 04 — 15 June 2010 8 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

Fig 9. Transfer characteristics: drain curre nt as a

function of gate-source voltage; typical values Fig 10. Gate-source voltage as a function of turn-on

gate charge; typical values

Fig 11. Gate-source threshold voltage as a function of

junction temperature Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

03na81

100

0123456

VGS (V)

(A)

Tj = 175 °C

Tj = 25 °C

03na83

0102030

QG (nC)

VGS

(V)

VDD = 44 V

VDD = 14 V

03aa33

0.5

1.5

2.5

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

max

typ

min

03na87

0 102030405060708090

ID (A)

RDSon

(mΩ)

3.2 3.4

3.6 3.8 4

VGS(V) = 3

Product data sheet Rev. 04 — 15 June 2010 9 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

Fig 15. Reverse diode curren t as a function of reverse diod e voltage; typical values

Tj (°C)

−60 180120060

03aa28

1.2

0.6

1.8

2.4

03na88

500

1000

1500

2000

2500

3000

3500

10−210−1 1 10 102

VDS (V)

(pF)

Crss

Coss

Ciss

03na82

100

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD (V)

(A)

Tj = 175 °C

Tj = 25 °C

Product data sheet Rev. 04 — 15 June 2010 10 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

7. Package outline

Fig 16. Package outline SOT428 (DPAK)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT428 SC-63

TO-252

SOT428

06-02-14

06-03-16

DIMENSIONS (mm are the original dimensions)

Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

D1HD

LL1

mounting

base

b1c

0 5 10 mm

scale

UNIT

mm 0.93

0.46 5.46

5.00 0.56

0.20 6.22

5.98 6.73

6.47 10.4

9.6 2.95

2.55

2.38

2.22

1.1

0.9

b1e1

0.89

0.71

bcD

0.9

0.5

2.285 4.57

4.0

min

4.45

min

0.5

min

HDLw

0.2

max

0.2

Product data sheet Rev. 04 — 15 June 2010 11 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9230-55A v.4 20100615 Product data sheet - BUK9230-55A v.3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BUK9230-5 5A v.3

(9397 750 07741) 20010130 Product Specification - -

Product data sheet Rev. 04 — 15 June 2010 12 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have changed since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. The product is not designed, authorized or warranted to be

suitable for use in medica l, military, aircraft, space or life suppo rt equipment,

nor in applications where failure or malf unction of an NXP Semiconductors

product can reasonably be expected to result in personal injury, death or

severe property or environmental damage. NXP Semiconductors accepts no

liability for inclusion and/or use of NXP Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third par ty

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or mo re limiting values (as defin ed in the

Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 04 — 15 June 2010 13 of 14

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

9.4 Trademarks

Notice: All referenced brand s, product names, service names and trademarks

are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFAR E Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BUK9230-55A

N-channel TrenchMOS logic level FET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 June 2010

Document identifier: BUK9230-55A

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .1 2

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1 3

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13