© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 0
1Publication Order Number:
NOA1211/D
NOA1211
Ambient Light Sensor with
Dark Current Compensation
Description
The NOA1211 is a very low power ambient light sensor (ALS) with
an analog current output and a power down mode to conserve power.
Designed primarily for handheld device applications, the active power
dissipation of this chip is less than 8 mA at dark and its quiescent
current consumption is less than 200 pA in power down mode. The
device can operate over a very wide range of voltages from 2 V to
5.5 V. The NOA1211 employs proprietary CMOS image sensing
technology from ON Semiconductor, including built−in dynamic dark
current compensation to provide large signal to noise ratio (SNR) and
wide dynamic range (DR) over the entire operating temperature range.
The photopic optical filter provides a light response similar to that of
the human eye. Together the photopic light response and dark current
compensation insures accurate light level detection.
Features
•Senses Ambient Light and Provides an Output Current Proportional
to the Ambient Light Intensity
•Photopic Spectral Response
•Dynamic Dark Current Compensation
•Two Selectable Output Current Gain Modes
•Power Down Mode
•Less than 18 mA at 100 lux Active Power Consumption in Normal
Operation (Less than 8 mA at Dark)
•Less than 200 pA Quiescent Power Dissipation in Power Down
Mode at All Light Levels
•Linear Response Over the Full Operating Range
•Senses Intensity of Ambient Light from ~0 lux to Over 100,000 lux
•Wide Operating Voltage Range (2 V to 5.5 V)
•Wide Operating Temperature Range (−40°C to 85°C)
•Drop−in Replacement Device in 1.6 x 1.6 mm Package
•These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
Applications
•Saves display power in applications such as:
♦Cell Phones, PDAs, MP3 players, GPS
♦Cameras, Video Recorders
♦Mobile Devices with Displays or Backlit Keypads
♦Laptops, Notebooks, Digital Signage
♦LCD TVs and Monitors, Digital Picture Frames
♦Automobile Dashboard Displays and Infotainment
♦LED Indoor/Outdoor Residential and Street Lights Figure 1. Typical Application Circuit
hn
Photo
Diode Amp
GB2GB1
IOUT
PDB
RL
VDD
VSS
CL
ADC
C1
1m
Vin = 2 to 5.5V
IC1
NOA1211
IC2
Photo
Diode Amp
GB2GB1
IOUT
PDB
RL
VDD
VSS
CL
ADC
C1
Vin = 2 to 5.5V
IC1
NOA1211
IC2
Device Package Shipping†
ORDERING INFORMATION
NOA1211CUTAG* CUDFN6
(Pb−Free)
2500 /
Tape & Reel
CUDFN6
CU SUFFIX
CASE 505AE
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PIN ASSIGNMENT
(Top View)
1
2
3
6
5
4
VDD
VSS
GB1
IOUT
NC
GB2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Temperature Range: −40°C to 85°C.
NOA1211
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2
hn
Photo
Diode
Reference
Diode
Amp
GB2 GB1
IOUT
‘0’PDB
RL
VOUT
h
Photo
Diode
Reference
Diode
Amp
GB2 GB1
IOUT
‘0’PDB
RL
VOUT
Figure 2. Simplified Block Diagram Configured for M−Gain and Power−Down
Table 1. PIN FUNCTION DESCRIPTION
Pin Pin Name Description
1 VDD Power pin.
2 VSS Ground pin.
3 GB1 In conjunction with GB2, selects between two gain modes and power down.
4 GB2 In conjunction with GB1, selects between two gain modes and power down.
5 NC Not connected. This may be connected to ground or left floating.
6 IOUT Analog current output.
EP VSS Exposed pad, internally connected to ground. Should be connected to ground.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input power supply VDD 6 V
Input voltage range VIN −0.3 to VDD + 0.3 V
Output voltage range VOUT −0.3 to VDD + 0.2 V
Output current range Io0 to 15 mA
Maximum Junction Temperature TJ(max) −40 to 85 °C
Storage Temperature TSTG −40 to 85 °C
ESD Capability, Human Body Model (Note 1) ESDHBM 2 kV
ESD Capability, Charged Device Model (Note 1) ESDCDM 750 V
ESD Capability, Machine Model (Note 1) ESDMM 150 V
Moisture Sensitivity Level MSL 5 −
Lead Temperature Soldering (Note 2) TSLD 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: v 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
NOA1211
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3
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C <
TA < 85°C)
Rating Test Conditions Symbol Min Typ Max Unit
Power supply voltage VDD 2 3.0 5.5 V
Power supply current VDD = 3.0 V, Ev = 0 lux, M−Gain IDD_0 6 8 12 mA
Power supply current VDD = 3.0 V, Ev = 100 lux, M−Gain IDD_100 13 14 18 mA
Power down current All light levels IDD_PD 0.2 5 nA
Output current, medium−gain Ev = 100 lux, white LED Io_med 2.66 5.2 7.98 mA
Output current, low−gain Ev = 100 lux, white LED Io_low 0.266 0.52 0.798 mA
Dark output current, medium−gain VDD = 3.0 V, Ev = 0 lux Io_dark 1 nA
Wavelength of maximum response lm540 nm
White LED/fluorescent current
ratio
Ev = 100 lux rLF 1.0
Incandescent/fluorescent current
ratio
Ev = 100 lux rIF 1.45
Maximum output voltage Ev = 100 lux, RL = 220 kW, M−Gain VOMAX VDD–0.4 VDD–0.1 VDD V
Power down time Ev = 100 lux, M−Gain to PD tPD 1.5 ms
Wake up time Ev = 100 lux, PD to M−Gain twu 300 ms
Low level input voltage VIL −0.2 0.25
VDD
V
High level input voltage VIH 0.75
VDD
VDD +
0.2
V
Operating free−air temperature
range
TA−40 85 °C
NOA1211
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TYPICAL CHARACTERISTICS
Figure 3. Spectral Response (Normalized) Figure 4. Light Source Dependency (Normalized to
Flouroscent Light, Medium Gain Mode)
Figure 5. Output Current vs. Ev Figure 6. Output Current vs. Ev (Medium Gain)
Figure 7. Output Current vs. Ev, 0−1000 lux
(Medium Gain Mode)
Figure 8. Output Current vs. Ev, 0−100 lux
(Medium Gain Mode)
0 0.5 1 1.5 2
Incandescent
(2850K)
Fluorescent
(2700K)
White LED
(5600K)
Fluorescent
(5000K)
Ratio
WAVELENGTH (nm)
0.5
200 300 400 500 600 700 800 900 1000
ALS
Human Eye
0.4
0.3
0.2
0.1
0
0.8
0.6
0.7
1.0
0.9
OUTPUT CURRENT (Normalized)
Ev (lux)
1
0.01 0.1 1 10 100 1000 10000 100000 1000000
Medium Gain
Low Gain
0.1
0.01
0.001
0.0001
0.00001
1000
10
100
10000
OUTPUT CURRENT (mA)
VDD = 3.3 V
Ev (lux)
1
1 10 100 1000 10000 100000
No Load
1 kW Load
10 kW Load
100 kW Load
1000
10
100
10000
OUTPUT CURRENT (mA)
VDD = 3.3 V
Ev (lux)
OUTPUT CURRENT (mA)
50
0 200 400 600 800 1000
White LED (5600K)
40
30
20
10
0
60
Ev (lux)
OUTPUT CURRENT (mA)
5
0 20 40 60 80 100
White LED (5600K)
4
3
2
1
0
6
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TYPICAL CHARACTERISTICS
Figure 9. Output Current vs. Angle (End View,
Normalized, Medium Gain Mode)
Figure 10. Output Current vs. Angle (End View,
Normalized, Medium Gain Mode)
Figure 11. Output Current at 0 lux vs.
Temperature (Medium Gain)
Figure 12. Output Current at 100 lux vs.
Temperature (Medium Gain)
Figure 13. Supply Current at 0 lux vs.
Temperature (Medium Gain)
Figure 14. Supply Current at 100 lux vs.
Temperature (Medium Gain)
TEMPERATURE (°C)
OUTPUT CURRENT (nA)
0.5
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
0.4
0.3
0.2
0.1
0.0
0.7
0.6
TEMPERATURE (°C)
OUTPUT CURRENT (Normalized to 20C)
1.0
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
0.8
0.6
0.4
0.2
0.0
1.6
1.2
1.4
Medium Gain Mode
Low Gain Mode
TEMPERATURE (°C)
IDD (mA)
5
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
4
3
2
1
0
8
6
7
10
9
TEMPERATURE (°C)
IDD (mA)
10
−60 −40 −20 0 20 40 60 80 100
VDD = 3.3 V
8
6
4
2
0
16
12
14
20
18
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
010 20 30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
−170
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30 −20 −10
Q
END VIEW
1
2
3
6
5
4
TOP VIEW
−90
o90o
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
010 20 30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
−170
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30 −20 −10
Q
SIDE VIEW
TOP VIEW
1
2
3
6
5
4
−90
o90o
NOA1211
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6
TYPICAL CHARACTERISTICS
Figure 15. Output Current at 100 lux vs. Supply
Voltage (Medium Gain)
Figure 16. Supply Current vs. Ev (Medium Gain)
Figure 17. Supply Current vs. Supply Voltage
(Medium Gain)
VDD (V)
OUTPUT CURRENT (Normalized)
1.0
0123456
0.8
0.6
0.4
0.2
0.0
1.6
1.2
Lux (Ev)
SUPPLY CURRENT (mA)
50
0 200 400 600 800 1000
White LED (5600K)
40
30
20
10
0
80
60
70
1.4
VDD (V)
SUPPLY CURRENT (mA)
10
0123456
8
6
4
2
0
16
12
14
NOA1211
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7
DESCRIPTION OF OPERATION
Ambient Light Sensor Architecture
The NOA1211 employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The major components of this sensor are as
shown in Figure 2 . The photons which are to be detected
pass through an ON Semiconductor proprietary color filter
limiting extraneous photons and thus performing as a band
pass filter on the incident wave front. The filter only
transmits photons in the visible spectrum which are
primarily detected by the human eye and exhibits excellent
IR rejection. The photo response of this sensor is as shown
in Figure 3.
The ambient light signal detected by the photo diode is
converted to an analog output current by an amplifier with
programmable gain. Table 4 shows the gain setting and the
corresponding light sensitivity.
Table 4. PROGRAMMABLE GAIN SETTINGS
GB2 GB1 Mode Output Current @ 100 lux Output Current @ 1000 lux Saturation
0 0 Power Down − − −
1 0 Medium Gain 5.2 mA 52 mA~100,000 lux
1 1 Low Gain 0.52 mA5.26 mA> 100,000 lux
Power Down Mode
This device can be placed in a power down mode by
setting GB1 and GB2 to logic low level.
In order for proper operation of this mode GB1 and GB2
should stay low 1.5 ms.
External Component Selection
The NOA1211 outputs a current in direct response to the
incident illumination. In many applications it is desirable to
convert the output current into voltage. It may also be
desirable to filter the effects of 50/60 Hz flicker or other light
source transients.
Conversion from current to voltage may be accomplished
by adding load resistor RL to the output. The value of RL is
bounded on the high side by the potential output saturation
of the amplifier at high ambient light levels. RL is bounded
on the low side by the output current limiting of the internal
amplifier and to minimize power consumption.
Equation 1 describes the relationship of light input to
current output for the Medium−Gain mode.
IOUT +ǒ5.2 mAń100 luxǓ*E
V(eq. 1)
By adding RL to the output, IOUT is converted into a
voltage according to Equation 2.
VOUT +IOUT *R
L+ǒ5.2 mAń100 luxǓ*E
V*R
L(eq. 2)
The range of the output voltage is limited by the output
stage to the VOMAX parameter value of VDD – 0.4 V at the
maximum desired EV as shown in Equation 3. Equation 4
computes the value for RL (Medium−Gain mode).
VOMAX +ǒ5.2 mAń100 luxǓ*E
VMAX *R
L(eq. 3)
RL+ǒVDD *0.4 VǓńEVMAX *ǒ100 luxń5.2 mAǓ(eq. 4)
For example, consider a 5 V supply with a desired EVMAX
= 1000 lux, the value of RL would be 88.5 kW. The value for
RL can easily be computed for different NOA1211 gain
ranges by substituting the appropriate output current at
100 lux from Table 4.
The optional capacitor CL can be used to form a low−pass
filter to remove 50/60 Hz filter or other unwanted noise
sources as computed with Equation 5.
CL+1ń2pfcRL(eq. 5)
For our example, to filter out 60Hz flicker the value of CL
would be 30 nF.
Power Supply Bypassing and Printed Circuit Board
Design
Power supply bypass and decoupling can typically be
handled with a low cost 0.1 mF to 1.0 mF capacitor.
The exposed pad on the bottom of the package is internally
connected to VSS pin 2 and should be soldered to the printed
circuit board.
NOA1211
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8
PACKAGE DIMENSIONS
CUDFN6, 1.6x1.6
CASE 505AE−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.30mm FROM
THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
SEATING
PLANE
D
E
0.10 C
A3
2X
2X
0.10 C
DIM MAX
MILLIMETERS
0.05 C
0.08 C
A0.10 C
NOTE 3
L
e
D2
E2
b
B
3
6
6X
1
K
4
6X
0.05 C
BOTTOM VIEW
MOUNTING FOOTPRINT
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
A B
TOP VIEW
A
A1
DETAIL A
C
SIDE VIEW
NOTE 4
DETAIL A
END VIEW
d
q
A
A1
b
E2
D
D2
E
K
e
L
q
A3
MIN
0.55
0.00
0.15
0.40
1.00
0.20
0.25
4
0.65
0.05
0.25
0.60
1.20
---
0.35
0.20 REF
10
1.60 BSC
1.60 BSC
0.50 BSC
55
6X
0.52
0.50
PITCH
1.20
1.90
6X
0.25
0.60
1
13
64
A
M
0.10 BC
M
M
A
M
0.10 BC
d--- 0.10
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