CPH6339 Ordering number : ENA1199 P-Channel Silicon MOSFET CPH6339 General-Purpose Switching Device Applications Features * * * Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --45 V 20 V --3 A ID Drain Current (Pulse) IDP PW10s, duty cycle1% --12 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS IDSS typ ID=--1mA, VGS=0V VDS=--45V, VGS=0V VGS=16V, VDS=0V --45 VDS=--10V, ID=--1mA --1.2 yfs RDS(on)1 VDS=--10V, ID=--1.5A 2.0 ID=--1.5A, VGS=--10V RDS(on)2 RDS(on)3 ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V IGSS VGS(off) Marking : YR (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Ratings min Unit max V --1 A 10 A --2.6 V 82 107 m 128 180 m 140 196 m 3.4 S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: CPH6339/D CPH6339 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time min pF 75 pF VDS=--20V, f=1MHz See specified Test Circuit. 50 pF 10 ns See specified Test Circuit. 12 ns See specified Test Circuit. 54 ns See specified Test Circuit. 27 ns 14 nC 2.2 nC Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD IS=--3A, VGS=0V Qg Gate-to-Source Charge Qgs 2.9 0V --10V 0.15 2.9 4 ID= --1.5A RL=16 VIN 0.2 0.6 V VDD= --24V VIN D 0.05 1.6 2.8 --1.2 Switching Time Test Circuit unit : mm (typ) 7018A-003 5 nC --0.85 Package Dimensions 6 Unit max 680 VDS=--24V, VGS=--10V, ID=--3A VDS=--24V, VGS=--10V, ID=--3A VDS=--24V, VGS=--10V, ID=--3A Total Gate Charge typ VDS=--20V, f=1MHz VDS=--20V, f=1MHz td(off) tf Fall Time Ratings Conditions VOUT PW=10s D.C.1% 2 0.95 3 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.4 0.9 0.2 0.6 G 1 CPH6339 P.G 50 S SANYO : CPH6 5V . --3 --5 --3 --2 5C 25 --25 C C VGS= --3.0V --1.0 --4 Ta= 7 --1.5 VDS= --10V Drain Current, ID -- A V --10.0V --8. 0V --6.0 V --2.0 ID -- VGS --6 --16.0 Drain Current, ID -- A --2.5 --4. 5 --4 V .0V ID -- VDS --3.0 --1 --0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 Drain-to-Source Voltage, VDS -- V --1.0 0 IT13630 Rev.0 I Page 2 of 4 I www.onsemi.com --1 --2 --3 --4 Gate-to-Source Voltage, VGS -- V --5 IT13631 CPH6339 RDS(on) -- VGS 300 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- m 200 ID= --1.0A --1.5A 150 100 50 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 3 C -25 =a C T 75 C 25 7 5 3 2 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 40 60 80 100 120 140 160 IT13633 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 --0.2 5 7 --10 IT13634 7 --1.2 IT13635 td(on) tr Ciss 7 Ciss, Coss, Crss -- pF 2 7 --1.0 1000 tf 10 --0.8 f=1MHz 5 3 --0.6 Ciss, Coss, Crss -- VDS 2 VDD= --10V VGS= --10V td(off) --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 100 Switching Time, SW Time -- ns 20 3 2 0.1 Drain Current, ID -- A 5 3 2 100 Coss Crss 7 5 5 3 3 2 --0.1 2 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 7 0 3 2 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 3 2 --1 3 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Total Gate Charge, Qg -- nC --20 --25 --30 --35 --40 IT13637 ASO IDP= --12A PW10s 1m 1 s 00 s 10 m s 10 0m DC s op er ati on ID= --3A 3 2 --2 0 --15 --1.0 7 5 --0.1 7 5 0 --10 Drain-to-Source Voltage, VDS -- V VDS= --24V ID= --3A --9 --5 IT13636 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 0 --10 7 5 5 1.0 --20 Ambient Temperature, Ta -- C VDS= --10V 2 --40 IT13632 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 7 0 --60 --16 yfs -- ID 10 A --1.0 I D= , V .0 A = --4 --1.0 I D= VGS , V .5 = --4 VGS .5A = --1 0V, I D 1 -= VGS --25 C 250 Ta=7 5C 25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) --0.01 --0.01 2 3 IT13638 Rev.0 I Page 3 of 4 I www.onsemi.com 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT13639 CPH6339 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 When mounted on ceramic substrate (900mm20.8mm) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT13640 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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