CPH6339
Rev.0 I Page 1 of 4 I www.onsemi.com
Ordering number : ENA1199
CPH6339 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•High-speed switching.
•4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --45 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--3 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --12 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
✕0.8mm)
1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --45 V
Zero-Gate Voltage Drain Current IDSS VDS=--45V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--1.5A 2.0 3.4 S
RDS(on)1 ID=--1.5A, VGS=--10V 82 107 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--1A, VGS=--4.5V 128 180 mΩ
RDS(on)3 ID=--1A, VGS=--4V 140 196 mΩ
Marking : YR Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
CPH6339/D
CPH6339
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=--20V, f=1MHz 680 pF
Output Capacitance Coss VDS=--20V, f=1MHz 75 pF
Reverse T ransfer Capacitance Crss VDS=--20V, f=1MHz 50 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns
Rise T ime trSee specified Test Circuit. 12 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 54 ns
Fall T ime tfSee specified Test Circuit. 27 ns
Total Gate Charge Qg VDS=--24V, VGS=--10V, ID=--3A 14 nC
Gate-to-Source Charge Qgs VDS=--24V, VGS=--10V, ID=--3A 2.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--24V, VGS=-- 10V, ID=--3A 2.9 nC
Diode Forward Voltage VSD IS=--3A, VGS=0V -- 0.85 -- 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7018A-003
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
321
645
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --1.5A
RL=16Ω
VDD= --24V
VOUT
CPH6339
VIN
0V
--10V
VIN
ID -- VDS ID -- VGS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0
--1.0
--0.5
--1.5
--2.0
--2.5
--3.0
0--0.2 --0.4 --0.6 --0.8 --1.0
IT13630
0--2 --5--4--1 --3
0
--2
--4
--6
--1
--3
--5
IT13631
--4.0V
VGS= --3.0V
--3.5V
--4.5V
--16.0V
--6.0V
--8.0V
--10.0V
VDS= --10V
Ta=75°C
--25°C
25°C
CPH6339
Rev.0 I Page 3 of 4 I www.onsemi.com
IS -- VSD
yfs -- ID
Forward T ransfer Admittance,
y
fs -- S
Drain Current, ID -- A
Source Current, IS -- A
Diode Forward Voltage, VSD -- V
SW Time -- IDCiss, Coss, Crss -- VDS
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
Drain Current, ID -- A A S O
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT13634 IT13635
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
0.1
1.0
7
7
5
5
3
2
10
7
5
3
2
--0.01 --0.1 223 57 --10
23 57
--1.0
357 --0.01
2
3
--0.1
2
7
5
3
--1.0
2
7
5
--0.1 --1.0
23 57 723 5
IT13636
0--5--10 --15
2
1000
7
5
5
3
3
2
100
7
2--20 --40--30--25 --35
IT13637
10
2
3
2
7
3
5
100
7
5
0--4--2 --8 --12--6 --10 --14 --16
50
100
150
200
250
300
0
IT13632 IT13633
Ta=25°C
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
300
100
200
250
50
150
015135792468 11 141310 12
IT13639
IT13638
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
3
--10
7
5
--0.01
3
2
3
5
2
7
3
5
7
2
3
2
5
7
--10
--1.0
--0.1
--10--1.0
772357723523 5 23 57
--0.1--0.01
ID= --1.0A --1.5A
VGS= --4.0V, ID= --1.0A
VGS= --
4.5
V, ID= --
1.0
A
VGS= --
10
V
,
ID= --
1.5
A
Ta= --25
°
C
VDS= --10V
75°C
25
°
C
VGS=0V
Ta=75°C
25
°
C
--25°C
VDD= --10V
VGS= --10V
td(on)
td(off)
tf
tr
Ciss
Coss
Crss
f=1MHz
VDS= --24V
ID= --3A
ID= --3A
IDP= --12A
Operation in this
area is limited by RDS(on).
DC operation
100ms
10ms
1ms
100
µ
s
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
PW≤10µs
CPH6339
Rev.0 I Page 4 of 4 I www.onsemi.com
IT13640
020406080100 120 140 160
0
0.4
0.8
1.4
1.6
2.0
0.2
0.6
1.0
1.2
1.8
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
When mounted on ceramic substrate
(900mm
2
✕0.8mm)
CPH6339/D
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