1C3D16065D Rev. B, 7-2016
C3D16065D
Silicon Carbide Schottky Diode
Z-Rec® 
Features
• 650-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies(SMPS)
• BoostdiodesinPFCorDC/DCstages
• FreeWheelingDiodesinInverterstages
• AC/DCconverters 
Package
TO-247-3 
Part Number Package Marking
C3D16065D TO-247-3 C3D16065
*PerLeg,**PerDevice
VRRM = 650 V
IF (TC=135˚C) = 22 A**
Qc = 40 nC**
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCBlockingVoltage 650 V
IF
ContinuousForwardCurrent(PerLeg/Device)
23/46
11/22
8/16
A
TC=25˚C
TC=135˚C
TC=150˚C
Fig.3
IFRM
RepetitivePeakForwardSurgeCurrent
(PerLeg/Device) 37.5/75
25.5/51 ATC=25˚C,tP=10ms,HalfSineWave
TC=110˚C,tP=10ms,HalfSineWave
IFSM Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
71/142
60/120 ATC=25˚C,tp=10ms,HalfSineWave
TC=110˚C,tp=10ms,HalfSineWave Fig.8
IFSM
Non-RepetitivePeakForwardSurgeCurrent
(PerLeg/Device)
650/1300
530/1080 ATC=25˚C,tP=10µs,Pulse
TC=110˚C,tP=10µs,Pulse Fig.8
Ptot PowerDissipation(PerLeg) 100*
43.5* WTC=25˚C
TC=110˚C Fig.4
dV/dt DiodedV/dtruggedness 200 V/ns VR=0-600V
∫i2dt i2tvalue(PerLeg) 25
18 A2sTC=25˚C,tP=10ms
TC=110˚C,tP=10ms
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in M3Screw
6-32Screw
2C3D16065D Rev. B, 7-2016
10
15
20
25
30
Reverse Leakage Current, I
RR (mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
5
10
0 100 200 300 400 500 600 700 800 900 1000
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
2.1
1.8
2.4 VIF = 8 A TJ=25°C
IF = 8 A TJ=175°C Fig. 1
IRReverse Current 10
12
51
204  VR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 20 nC
VR = 400 V, IF = 8A
di/dt
TJ = 25°C
Fig. 5
C Total Capacitance
395
37
32
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ
VR = 400 V, TJ
Fig. 6
ECCapacitance Stored Energy 3.0  VR = 400 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 1.5 *
0.75 ** °C/W Fig. 9
* Per Leg, ** Per Device
Typical Performance (Per Leg)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
0 200 400 600 800 1000 1200
8
10
12
14
16
18
20
F
(A)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
0
2
4
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Voltage, V
F
(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D16065D Rev. B, 7-2016
30
40
50
60
70
80
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
10
20
25 50 75 100 125 150 175
Figure3.CurrentDerating Figure4.PowerDerating
40
60
80
100
120
0
20
40
25 50 75 100 125 150 175
Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance (Per Leg)
10
15
20
25
30
Capacitive Charge, Q
C
(nC)
Conditions:
TJ= 25 °C
0
5
10
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
150
200
250
300
350
400
450
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
50
100
150
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D16065D Rev. B, 7-2016
3
4
5
6
7
8
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
1
2
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance (Per Leg)
100
1,000
I
FSM
(A)
T
J_initial
= 25 °C
T
J_initial
= 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
Figure7.CapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
Figure9.TransientThermalImpedance
100E-3
1
0.5
0.3
0.1
0.05
0.02
SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C3D16065D Rev. B, 7-2016
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
T U
WV
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
e
all units are in inches
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Part Number Package Marking
C3D16065D TO-247-3 C3D16065
66 C3D20065D Rev. A, 04-2016
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model (Per Leg)
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT=VT+If*RT
VT=0.95+(TJ*-1.2*10-3)
RT=0.054+(TJ*5.5*10-4)