MIXERS - SUB-HARMONIC - CHIP
3
3 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
v01.0209
General Description
Features
Functional Diagram
Wide IF Bandwidth: DC - 3 GHz
RF Frequency: 54 to 64 GHz
LO Frequency: 27 to 32 GHz
High Image Rejection: 30 dB
Passive; No DC Bias Required
Die Size: 1.54 x 1.41 x 0.1 mm
Electrical Speci cations*, TA = 25 °C, IF = 1 GHz, LO = +10 dBm
Typical Applications
This HMC-MDB218 is ideal for:
• Short-Haul / High Capacity Radios
• SATCOM
• Military Radar, ECM & EW
• Sensors
• Test & Measurement Equipment
The HMC-MDB218 is a sub-harmonically pumped (x2)
MMIC Mixer which can be used as either an image
reject mixer (IRM) or a single sideband upconverter.
This passive MMIC mixer is fabricated with GaAs
Heterojunction Bipolar Transistor (HBT) Shottky diode
technology. For downconversion applications, an
external quadrature hybrid can be used to select the
desired sideband while rejecting image signals. All
bond pads and the die backside are Ti/Au metallized
and the Shottky devices are fully passivated for reliable
operation. The HMC-MDB218 Sub Harmonic IRM is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes.
HMC-MDB218
Parameter Min. Typ. Max. Units
Frequency Range, RF 54 - 64 GHz
Frequency Range, LO 27 - 32 GHz
Frequency Range, IF DC - 3 GHz
Conversion Loss 12.5 14 dB
1 dB Compression (Input) -2 dBm
Image Rejection 30 dB
LO to RF Isolation 30 dB
LO to IF Isolation 30 dB
IP3 (Input) 7dBm
Amplitude Balance 0.3 dB
Phase Balance 1Deg
* Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 179
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
IF Port Return Loss [2]
Downconverter Conversion Loss [1]
HMC-MDB218
v01.0209
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
[1] LO = 27 - 30 GHz
IF = 1 GHz
PLO = +10 dBm
PRF = -20 dBm
[2] LO = 29.5 GHz, PLO = 10 dBm
Note 1: Measured Performance Characteristics (TOP = 25°C)
Note 2: Single side band measurement without 90º hybrid, and second IF port terminated.
RF Port Return Loss [2]
-16
-15
-14
-13
-12
-11
-10
54 55 56 57 58 59 60 61 62 63 64
CONVERSION LOSS (dB)
RF FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
54 55 56 57 58 59 60 61 62 63 64 65
RF RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
012345
IF1 Return Loss (dB)
IF2 Return Loss (dB)
IF RETURN LOSS (dB)
FREQUENCY (GHz)
Absolute Maximum Ratings
LO Drive 16 dBm
Storage Temperature -65 °C to 150 °C
Operating Temperature -55 °C to 85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 180
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB218
v01.0209
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Pad Number Function Pin Description Interface Schematic
1, 3 IF1, IF2 This pad is DC coupled.
2 RF This pad is DC coupled and matched to 50 Ohms.
4 LO This pad is DC coupled and matched to 50 Ohms.
Pad Descriptions
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 181
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB218
v01.0209
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Application Circuits
Application circuit 1 shows the mixer equivalent circuit. Application Circuit 2 depicts the mixer with a 90°hybrid used to
achieve signal image rejection. All RF parameters are speci ed with an ideal 90° hybrid on IF output ports. Conversion
loss is measured (on wafer) at IF1 and/or IF2 (Application Circuit 1) with the second IF port terminated into 50 ohms.
Three dB is then added to compensate for an ideal hybrid. The IP3 is stated as an input IP3 number and is obtained
via a two-tone measurement.
Application Circuit 1
Application Circuit 2
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 182
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB218
v01.0209
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
MIXERS - SUB-HARMONIC - CHIP
3
3 - 183
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-MDB218
v01.0209
GaAs MMIC SUB-HARMONIC
IRM MIXER, 54 - 64 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
