This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com April 2003
The Communications Edg e TM
AH210
1 Watt, High Gain HBT Amplifier Preliminary Product Information
Product Features
• 1500 – 2300 MH z
• 25 dB Gain @ 1960 MHz
• +30 dBm P1dB
• +49 dBm Output IP3
• Single Positive Supply (+5 V)
• SOIC-8 SMT P ackage
Product Description
The AH210 is a high gain, high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior
performance over a broad frequency range with a gain of
25dB, +49 dBm OIP3 and +30 dBm of compressed 1-dB
power. The part is housed in an industry standard SOIC-8
SMT package. All devices are 100% RF and dc tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high gain, high linearity and high power are
required. The internal active bias allows the AH210 to
maintain high performance over temperature and the
active bias circuitry allows it to operate directly off a +5
V supply.
Functional Di agram
Function Pin No.
Vc1 1
Vbias 2
Input 3
Bias Control 4
Output / Vc2 5,6,7,8
GND Slug
Target Specifications
Parameters Units Min Typ Max
Frequency Range MHz 1500 1960 2300
S21 - Gain dB 25
S11 - Input R.L. dB -15
S22 - Output R.L. dB -15
Output P1dB dBm +30
Output IP32 dBm +47
Noise Figure dB 5.0
IS-95 Channel Power
@ -55 dBc ACPR, 9 Ch .Fwd., 1960 MHz dBm +21.5
IS-95 Channel Power
@ -65 dBc ACPR, 9 Ch .Fwd., 1960 MHz dBm +19
W-CDMA Channel Power
@ -50 dBc, 2140MHz, 64 DPCH dBm +20
W-CDMA Channel Power
@ -55 dBc, 2140MHz, 64 DPCH dBm +19
Operating Current Range mA 440
Device Voltage V 5
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 1960 MHz, in recommended application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Specifications
Parameters Units Typical
Frequency MHz 1850 1960 2140
S21 - Gain dB 26 25 24
S11 - Input R.L. dB -14 -15 -16
S22 - Output
R.L. dB -14 -15 -17
Output P1dB dBm 30 +30 +29.5
Output IP32 dBm 47 +47 +49
Noise Figure dB 5.0 5.0 5.0
Supp ly Bias +5 V @ 440 mA
Typical parameters reflect performance in an application circuit:
Absolute Maximum Rating Ordering I nformation
Parameters Rating Part No. Description
RF Input Power (continuous) +10 dBm AH210 1 Watt, High Linearity HBT Amplifier
dc Voltage +6 V (Available in Tape & Reel)
Operation of this device above any of these parameters may cause permanent damage.
Thermal Information
Parameters Rating
Operating Case Temperature -40 to +85 °C
Stor age Te mperat ure -55 to +150 °C
Thermal Resistance 33 °C/W
. To ensure MTTF > 1x10e6 hrs
4
2
3
1
5
Bias
Active 7
6
8