NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-
istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-
rent flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
DMaximum Safe–Area–of–Operation
DLow Saturation Voltages
DHigh Voltage Rating: VCER(sus) = 375V
DHigh Dissipation Rating: PT = 45W
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Sustaining Voltage
With Base Open, VCEO(sus) 350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With Reverse Bias (VBE) of –1.5V, VCEX(sus) 375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus) 375V. . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, IB4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, Topr –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL+230°C. . . . . . .
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC 3.9°C/W. . . . . . . . . . . . . . . . .