AO7414
20V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 2A
R
DS(ON)
(at V
GS
=4.5V) < 62mΩ
R
DS(ON)
(at V
GS
=2.5V) < 70mΩ
R
DS(ON)
(at V
GS
=1.8V) < 85mΩ
Symbol
V
DS
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
The AO7414 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT-323 footprint. It
can be used for a wide variety of applications, including
load switching, low current inverters and low current DC-
DC converters.
20V
Drain-Source Voltage
20
V
Maximum Units
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Pulsed Drain Current
B
°C
Thermal Characteristics
Power Dissipation
A
P
D
T
A
=25°C W
0.35
0.22
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
A
A
I
D
2
1.5
25
V±8Gate-Source Voltage
Drain-Source Voltage
20
V
Maximum Junction-to-Lead
C
°C/W
°C/W
Maximum Junction-to-Ambient
A
280 425
320
340
UnitsParameter Typ Max °C/W
R
θJA
300 360
Maximum Junction-to-Ambient
A
www.aosmd.com Page 1 of 4
AO7414
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.5 0.68 1 V
I
D(ON)
25 A
50 62
T
J
=125°C 70 90
56 70 mΩ
66 85 mΩ
g
FS
15 S
V
SD
0.7 1 V
I
S
0.35 A
C
iss
260 320 pF
C
oss
48 pF
C
rss
27 pF
R
g
3 4.5 Ω
Q
g
2.9 3.8 nC
Q
gs
0.4 nC
Q
gd
0.6 nC
t
D(on)
2.5 ns
t
3.2
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
=4.5V, V
=10V, R
=5
Ω
,
Reverse Transfer Capacitance V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=4.5V, V
DS
=10V, I
D
=2A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=2A
V
GS
=2.5V, I
D
=1.8A
Forward Transconductance
Diode Forward Voltage
V
GS
=1.8V, I
D
=1A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=2A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±8V
t
r
3.2
ns
t
D(off)
21 ns
t
f
3 ns
t
rr
14 19 ns
Q
rr
3.4 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=4.5V, V
DS
=10V, R
L
=5
Ω
,
R
GEN
=6Ω
Body Diode Reverse Recovery Charge I
F
=2A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=2A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev.2.0: April 2013 www.aosmd.com Page 2 of 4
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
60
80
100
120
012345678910
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
VGS=4.5V 0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=2A
VGS=2.5V
ID=1.8A
VGS=1.8V
ID=1A
25°C
125°C
VGS=1.8V
VGS=2.5V
0
5
10
15
20
25
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=1.5V
2V
2.5V
4.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
40
60
80
100
120
12345678
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=2A
25°C
125°C
Rev.2.0: April 2013 www.aosmd.com Page 3 of 4
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 0.5 1 1.5 2 2.5 3 3.5
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
50
100
150
200
250
300
350
400
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=10V
ID=2A
0.1
1
10
100
1000
0.000010.00010.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TJ(Max)=150°C
TA=25°C
0.1
1.0
10.0
100.0
0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100us
100ms
1s
10ms
Ambient (Note F)
Safe Operating Area (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=250°C/W
Rev.2.0: April 2013 www.aosmd.com Page 4 of 4