AO7414
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 0.5 0.68 1 V
I
D(ON)
25 A
50 62
T
J
=125°C 70 90
56 70 mΩ
66 85 mΩ
g
FS
15 S
V
SD
0.7 1 V
I
S
0.35 A
C
iss
260 320 pF
C
oss
48 pF
C
rss
27 pF
R
g
3 4.5 Ω
Q
g
2.9 3.8 nC
Q
gs
0.4 nC
Q
gd
0.6 nC
t
D(on)
2.5 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Reverse Transfer Capacitance V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=4.5V, V
DS
=10V, I
D
=2A
Gate Source Charge
Gate Drain Charge
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=2A
V
GS
=2.5V, I
D
=1.8A
Forward Transconductance
Diode Forward Voltage
V
GS
=1.8V, I
D
=1A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=2A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±8V
r
t
D(off)
21 ns
t
f
3 ns
t
rr
14 19 ns
Q
rr
3.4 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
GS
DS
L
R
GEN
=6Ω
Body Diode Reverse Recovery Charge I
F
=2A, dI/dt=100A/µs
Turn-Off DelayTime
I
F
=2A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev.2.0: April 2013 www.aosmd.com Page 2 of 4