MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data * * * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD202, Method 208 Weight: 0.008 grams (approximate) C SOT23 E B C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4 & 5) Product MMBT2222A-7-F MMBT2222A-13-F MMBT2222AQ-7-F Notes: Compliance AEC-Q101 AEC-Q101 Automotive Marking K1P / C1P K1P / C1P K1P Reel size (inches) 7 13 7 Tape width (mm) 8 8 8 Quantity per reel 3,000 10,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code YM K1P K = SAT (Shanghai Assembly / Test site) 1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2010 X Jan 1 2011 Y Feb 2 MMBT2222A Document number: DS30041 Rev. 13 - 2 Mar 3 2012 Z Apr 4 C = CAT (Chengdu Assembly / Test site) 1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2013 A May 5 Jun 6 1 of 7 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D August 2012 (c) Diodes Incorporated MMBT2222A Maximum Ratings (@TA = +25C unless otherwise specified) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value 75 40 6.0 600 800 Unit V V V mA mA Thermal Characteristics (@TA = +25C unless otherwise specified) Characteristic Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA RJL TJ,TSTG Value 310 350 403 357 350 -55 to +150 Unit mW C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 8,000 400 Unit V V JEDEC Class 3B C 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT2222A Document number: DS30041 Rev. 13 - 2 2 of 7 www.diodes.com August 2012 (c) Diodes Incorporated MMBT2222A Thermal Characteristics 400 Thermal Resistance (C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100 D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT2222A Document number: DS30041 Rev. 13 - 2 3 of 7 www.diodes.com August 2012 (c) Diodes Incorporated MMBT2222A Electrical Characteristics @TA = 25C unless otherwise specified Characteristic (Note 9) OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO 75 40 6.0 Collector Cutoff Current ICBO 10 Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 9) ICEX IEBO IBL 10 10 20 V V V nA A nA nA nA hFE 35 50 75 100 40 50 35 300 Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 2.0 V Cobo Cibo -- 8 25 pF pF fT 300 MHz NF 4.0 dB Delay Time td 10 ns Rise Time tr 25 ns Storage Time ts 225 ns Fall Time tf 60 ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100A, RS = 1.0k, f = 1.0kHz SWITCHING CHARACTERISTICS Notes: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 3.0V, IC = 150mA, IB1 = 15mA, VBE(OFF) = 0.5V VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT2222A Document number: DS30041 Rev. 13 - 2 4 of 7 www.diodes.com August 2012 (c) Diodes Incorporated MMBT2222A 1,000 0.5 VCE(SAT), COLLECTOR -EMITTER SATURATION VOLTAGE (V) IC IB = 10 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = 25C 10 0.4 TA = 25C 0.3 T A = 150C 0.2 0.1 TA = -50C VCE = 1.0V 0 1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 35 1.0 f = 1MHz VCE = 5V 0.9 30 TA = -50C 0.8 25 0.7 CAPACITANCE (pF) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.1 TA = 25C 0.6 0.5 TA = 150C 0.4 Cibo 15 10 Cobo 5 0.3 0.2 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Figure 3 Base-Emitter Turn-On Voltage vs. Collector Current 0 100 8 10 12 14 16 18 20 6 VR, REVERSE VOLTS (V) Figure 4 Typical Capacitance Characteristics 2 4 2.0 1,000 VCE = 5V VCE, COLLECTOR-EMITTER VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) 20 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Gain Bandwidth Product vs. Collector Current MMBT2222A Document number: DS30041 Rev. 13 - 2 100 5 of 7 www.diodes.com 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 100 1 IB, BASE CURRENT (mA) Figure 6 Typical Collector Saturation Region 0.01 August 2012 (c) Diodes Incorporated MMBT2222A Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 Y Z C X MMBT2222A Document number: DS30041 Rev. 13 - 2 E 6 of 7 www.diodes.com August 2012 (c) Diodes Incorporated MMBT2222A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com MMBT2222A Document number: DS30041 Rev. 13 - 2 7 of 7 www.diodes.com August 2012 (c) Diodes Incorporated