T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 1 of 6
2N6300 and 2N6301
Available
NPN Darlington Power Silicon Transistor
Qualified per MIL-PRF-19500/539
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This high speed NPN transistor is rated at 8 amps and is military qualified up to a JANTXV
level. This TO-213AA i solated package features a 180 degree lead orientation.
TO-213A A ( TO-66)
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6300 and 2N6301
• Hermet ically sealed
• JAN, JANTX, and J A NTXV qualifications are available per MIL-PRF-19500/539
• RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
• Convenient package
• Mechanically rugged
• Military, space and other high reliability applications
MAXIMUM RATINGS @ TC = 25 ºC unless otherwise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +200
oC
Thermal Resi stan ce Jun cti on-to-Case
RӨJC
2.66
oC
2N6300
2N6301
V
CBO
60
80
V
2N6300
2N6301
V
CEO
60
80
V
V
EBO
5
V
IC
8
A
Base Current
IB
120
mA
Total Power Dissipation (1)
@ T
C
= 0 ºC
@ TC = 100 ºC
P
T
75
37
W
NOTES: 1. Derate linearly at 0.428 W/ºC above TC > 0 ºC.
T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 2 of 6
2N6300 and 2N6301
MECHANICAL and PACKAGING
• CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap.
• TERMINALS: Solder dipped ( Sn63/Pb37) over nickel plated alloy 52. RoHS compli ant matte-tin plating is also available on
commercial grade only.
• MARKING: MSC, part number, date code, polarity symbol
• WEIGHT: Approximately 5.7 gram s
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6300 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IB
Base current: The value of the dc current into the bas e ter minal.
IC
Collector curre nt : The value of the dc current into the collector terminal.
IE
Emitter current: The value of the dc current into the emitter terminal.
TC
Case temperature: The temperature measured at a specified location on the case of a device.
VCB
Collector-base voltage: The dc voltage between the collector and the base.
VCBO
Collector-base volta ge, ba se open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
VCC
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
VEB
Emitter-base voltage: The dc voltage between the emitter and the base
VEBO
Emitter-base voltage, colle ctor open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 3 of 6
2N6300 and 2N6301
ELECTRICA L CHARACTERISTICS @ 25 ºC unless otherwise stated
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mA
2N6300
2N6301
V(BR)CEO
60
80
V
Collector-Emitter Cutoff Current
VCE = 60 VBE = 1.5 V
V
CE
= 80 V
BE
= 1.5 V
2N6300
2N6301
ICEX
10
µA
Collector-Emitter Cutoff Current, Base Open
VCE = 30 V
VCE = 40 V
2N6300
2N6301
ICEO
0.5
mA
Emitter-Base Cutoff Current
V
EB
= 5 V IEBO 2.0 mA
Forward Current Transfer Ratio
IC = 1 A, VCE = 3 V
IC = 4 A, VCE = 3 V
IC = 8 A, VCE = 3 V
hFE
500
750
100
18000
Collector-Emitter Saturation Voltage
IC = 4.0 A, IB = 16 mA
IC = 8.0 A, IB = 80 mA
VCE(sat)
2.0
3.0
V
Base-Emitter Saturation Voltage
VCE = 3.0 V, IC = 4 A
IC = 8.0 A, IB = 80 mA
VBE(sat) 2.8
4.0 V
DYNAMIC CHARA CTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
VCE = 3.0 V, IC = 3.0 A, f = 1 MHz
|hfe| 25 350
Common Emitter Small-Sig nal Sh ort-Circuit
Forward Current Trans-Ratio
VCE = 3 V, IC = 3 A, f = 1 kHz
hfe 300
Common Base Output
VCB = 10 V, IE = 0 A, 100 kHz ≤ f ≤ 1 MHz
Cobo 200 pF
T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 4 of 6
2N6300 and 2N6301
ELECTRICA L CHARACTERISTICS @ TC = 25 oC unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On time
VCC = 30 V, IC = 4 A, IB1 = 16 mA
ton 2.0 µs
Turn-Off time
VCC = 30 V, IC = 4 A, IB1 = -IB2 = 16 mA
toff 8.0 µs
SAFE OPERATING AREA (See Figures 1 and 2 and MIL-STD-750,Test Method 3053)
DC Tests
TC = +25 °C, t = 1 second, duty cycle ≤ 10%
Test 1
VCE = 8 V, IC = 8 A
Test 2
VCE = 20 V, IC = 2.0 A
Test 3
VCE = 60 V, IC = 100 mA (2N6300)
VCE
= 80 V, IC
= 100 mA (2N6301)
T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 5 of 6
2N6300 and 2N6301
SAFE OPERATING AREA
VCE – Collector to Emitter Voltage (Volts)
FIGURE 1 – Maximum Safe Operating Area (dc)
L – Inductance (millihenries)
FIGURE 2 – Safe Operating Area for switching between saturation and cutoff (unclamped inductive load)
IC = Collector Current (Amperes)
IC = Collector Current (Amperes)
T4-LDS-0171, Rev. 2 (11/18/13) ©2013 Microsemi Corporation Page 6 of 6
2N6300 and 2N6301
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. These dimensions should be measured at points 0.050 inch (1.27 mm)
+0.005 inch (0.13 mm) -0.000 inch (0.00 mm) below seating plane.
When gauge is not used, measurement will be made at the seating
plane.
4. Two places.
5. The seating plane of the header shall be flat within 0.001 inch (0.03
mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch
(23.62 mm) diameter circle on the center of the header and flat within
0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall.
6. Lead diameter shall not exceed twice LD within L1.
7. Lead number 1 is the emitter, lead 2 is the base, case is the collector.
8. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
SCHEMATIC
DIM
INCH
MILLIMETERS
Notes
MIN
MAX
MIN
MAX
CB
0.470
0.500
11.94
12.70
CD
-
0.620
-
15.76
CH
0.250
0.340
6.35
8.64
HR
-
0.350
-
8.89
HT
0.050
0.075
1.27
1.91
HR1
0.115
0.145
2.92
3.68
4
LD
0.028
0.034
0.71
0.86
4, 6
LL
0.360
0.500
9.14
12.70
L1
-
0.050
-
1.27
6
MHD
0.142
0.152
3.61
3.86
4
MHS
0.958
0.962
24.33
24.43
PS
0.190
0.210
4.83
5.33
3
PS1
0.093
0.107
2.36
2.73
3
S
0.570
0.590
14.48
14.99
T1
Base
T2
Emitter
Case
Collector