MegaMOSFET N-Channel Enhancement Mode Lf IXTN 79N20 s Symbol Test Conditions Maximum Ratings Voss T, =25Cto 150C 200 Vv Voar T, =25C to 150C; R,, = 10 kQ 200 V Ves Continuous +20 V Vasm Transient +30 Vv loos T, =25C 85 A lon T, =25C, pulse width limited by T,,, 340 A P, T, =25C 400 Ww T, -40 ...+150 C Tyy 150 C Tag -40 ... +150 C Visor 50/60 Hz t=1min 2500 V~ Iso. 1 MA t=1s 3000 V~ M, Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/b.in. Weight 30 g Symbol Test Conditions Characteristic Values (T,= 25C, unless otherwise specified) min. | typ. | max. Voss Veg =OV,1,=1mMA 200 Vv Vas) Vos = Ves: lp =20mMA 2 5 V loss Veg = 120 Vig: Vong = 0 4500 nA luss Vog = 0.8 * Vise T,=25C 400 LA Vos =OV T,=125C 2 mA Rosiony Vos = 10V,1,=0.51,,. 0.025 Q Pulse test, t <300 us, duty cycle ds 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 1999 IXYS All rights reserved V = DSS 200 V =85A = 25 mQ D25 DS(on) miniBLOC, SOT-227 B TAL E153432 G=Gate S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source D = Drain Features International standard package miniBLOC (ISOTOP compatible) * Isolation voltage 3000 V~ * Low Rag (4,, HDMOS process * Rugged polysilicon gate cell structure Low drain-to-case capacitance (< 50 pF) * Low package inductance (< 10 nH) - easy to drive and to protect Applications * AC motor speed control DC servo and robot drives Uninterruptible power systems (UPS) Switch-mode and resonant-mode power supplies DC choppers Advantages Easy to mount with 2 screws Space savings Highpower density C2-14Symbot Test Conditions Characteristic Values (T,= 25C, unless otherwise specified) min. | typ. | max. 9. Vag = 10V;1,=0.51,,,, pulsed 44 58 Ss Ci. 9000 pF Cc... Ves =OV,V,,= 25 V, f= 1 MHz 1600 pF C..s 600 pF Caron) 70 ~=ons t, Veg = 10V, Vio = 0.5 Vig, |, = 0.5 loos 80 ns tarot R,=1 Q, (External) 200 ns t, 100 ns Qs on) 380] 450 nc Q,, Vos =10V, Vi, =0.5* Vics, |, = 0.5 Ino. 70} 110 nc Qa. 190| 230 nc Rec 0.31 K/W Rinck 0.05 K/W Source-Drain Diode Characteristic Values {T, = 25C, unless otherwise specified) miniBLOC, SOT-227 B M4 screws (4x) supplied A _T Dim. Millimeter Min. Max. Inches Min. Max. 31.5 7.8 31.7 8.2 1.241 1.249 0.307 0.323 4.0 4.1 4.3 0.158 : 0.162 0.169 4.1 14.9 4.3 15.1 0.162 0.169 0.587 0.595 30.1 38.0 30.3 38.2 1.186 1.193 1.497 1.505 11.8 8.9 12.2 9.7 0.465 0.481 0.351 0.382 0.75 12.6 0.85 12.8 0.030 0.033 0.496 0.504 25.2 1.95 25.4 2.05 0.993 1.001 0.077 0.081 VIOZZr|[xc|rolnmMioo|w 5.0 + 0.197 Symbol Test Conditions min. | typ. | max. I, Veg = OV 8 A lone Repetitive; pulse width limited by T,,, 340 A Vep I, =I, Veg = OV, 12 V Pulse test, t <300 ps, duty cycle ds 2 % e I, =,, -di/dt = 100 A/us, V, = 100 V 400 ns IXYS reserves the right to change limits, test conditions, and dimensions. !XYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 C2 -15ly 250 200 10VA OV _ A Ya BY A Vg = 30 V T, = 25C I 200 7 I, LT 7Vv ice 100 6V 100 50 50 T, = 125C Veg =5V 4) | 0 0 1 2 3 4 5 v 6 0 2 4 6 v 8 Vos *" Ves Fig. 1 Typical output characteristics |, = f (V,.) Fig. 2 Typical transfer characteristics |, = f (V,,.) 1.6 2.00 Rosion) norm. y Poston norm. } t 50 + Vgg = 10 V vi / Ip=42.5A YA 1.2 4 1.25 ZA 7 4 Vag = 15 VI | La 1.00 1.0 4 _ + 0.75 j= 0.8 0.50 0 50 100 150 200 A 250 0 -25 O 25 650 75 100 C 150 I _- T, Fig. 3 Typical normalized R,,..,., = f (Ip) Fig. 4 Typical normalized R,,.,,., = f (T,) A T Vesin 80 12 bs I Voss Ky Voss f Vesey s 60 norm. IN a ' 1.0 s _ NN 40 a 0.8 DN 20 0 0.6 0 25 50 75 400 125 C 150 -0 -25 O 25 50 75 = 100 C 150 ___ Ty es T, Fig. 5 Continuous drain current |, =f (T,) Fig. 6 Typical normalized V,., =f (T,), Vesa = f(T.) (XYS reserves the right to change limits, test conditions, and dimensions. 1999 IXYS Allrights reserved C2-16V1 V5 = 100V 10 +1, =42.5A Ves Ig =10mA {8 a 6 7 4 / 2 0 0 100 200 300 400 nc 500 > Q, Fig. 7 Typical turn-on gate charge characteristics 100 nF 10 Cc | 0.1 0 5 10 15 20. y 2 Vos Fig. 9 Typical capacitances C =f (V,,), f= 1 MHz 8 80 g fs { 60 40 20 0 40 80 120 160 A 200 = Ip Fig. 11 Typical transconductance g,, = f (I,) IXYS reserves the right to change limits, test conditions, and dimensions. I, 0.001 1 10 100 Vv 1000 - V,; Fig. 8 Forward Safe Operating Area, |, = f (V,.) 200 A 150 / 100 L T, = 25C T= 125C 50 / 0 __ 0 0.25 0.50 0.75 1.00 V 1.25 Vso Fig. 10 Typical forward characteristics of reverse diode, |, =f(V so) 0.001 0.01 0.1 1 _ t s 10 Fig. 12 Transient thermal resistance Z,,,, =f (t,) 1999 IXYS All rights reserved C2-17