Absolute Maximum Ratings Values Symbol Conditions 1) VDS VDGR ID IDM VGS PD Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25 C Tcase = 100 C 1 ms AC, 1 min., 200 A DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750 20 1000 -40 ... +150 (125) 2 500 Class F 40/125/56 V V A A A V W C V 250 1000 A A SEMITRANS(R) M Power MOSFET Modules 250 A, 200 V, 8,6 m SKM 253 B 020 Inverse Diode IF = -ID IFM = -I DM 10 s SEMITRANS M3 Characteristics 1) min. typ. max. Units VGS = 0, ID = 0,5 mA VGS = VDS , I D = 1 mA VGS = 0 Tj = 25 C Tj = 125 C VDS = 200 V VGS = 20 V, VDS = 0 VGS = 10 V, ID = 150 A VDS = 25 V, ID = 150 A 200 2,1 - - - - - - 3,0 - - - 8 200 - 4,0 125 1250 100 8,6 - V V A A nA m S Symbol Conditions V(BR)DSS VGS(th) IDSS IGSS 3) RDS(on) gfs CCHC Ciss Coss Crss LDS VGS = 0 VDS = 25 V f = 1 MHz - - - - - - 34 6,5 2,5 - 700 39 7,5 3,5 20 pF nF nF nF nH td(on) tr td(off) tf VDD = 30 V ID = 150 A VGS = + 10 V RG = 4,7 - - - - 100 100 700 250 - - - - ns ns ns ns - - - - - - 160 - 12 - 1,5 - - - - V ns ns C - - - - 0,12 0,038 C/W C/W 3 27 2,5 22 - - - - - - - - 5 44 5 44 5x9,81 325 Nm lb.in. Nm lb.in. m/s 2 g Inverse Diode 8) VSD trr Qrr IRR IF = 250 A, VGS = 0 V T j = 25 C 3) T j = 150 C 3) T j = 25 C 3) T j = 150 C 3) Thermal characteristics Rthjc Rthch per MOSFET M 1, surface 10 m, per module Mechanical Data M1 M2 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units (M6) (M6) a w Case 1) 3) B 5 - 42 D 56 T case = 25 C, unless otherwise specified IF = 250 A, VR = 100 V, -diF/dt = 100 A/s (c) by SEMIKRON 0898 Features * N Channel, enhancement mode * Short internal connections and low inductance case avoid oscillations * Isolated copper baseplate using Al2O3 ceramic Direct Copper Bonding Technology (DCB) * All electrical connections on top for easy busbaring * Large clearance (13 mm) and creepage distances (20 mm) * UL recognized, file no. E63 532 Typical Applications * DC servo and robot drives * DC choppers * UPS equipment * Plasma cutting * Not suitable for linear amplification This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Suitable mounting hardware: Ident No. 33321100 (for 10 SEMITRANS 3) Screws B 6 - 4 B 5 - 39 SKM 253 B 020 M 253B020.X LS-2 M 253B020.XLS-1 1,2 1000 kW A Tjm = 150 C Tc = 25 C D = 0,01 tp=10s 1 100s 0,8 100 DC 1ms 0,6 10ms 0,4 10 100ms 0,2 RDSon=VDS/ID ID PD 0 1 0 TCase 40 80 120 C 160 Fig. 1 Rated power dissipation vs. temperature 1 VDS 10 V 100 Fig. 2 Maximum safe operating area, single pulse M 253B020.XLS-3 800 1000 M 253B020.XLS-4 800 Ptot =1,0kW A A V CE=20 10 9 8 7,5 7,0 600 600 6,5 6,0 400 400 5,5 200 5,0 200 ID 4,5 ID 4,0 0 0 0 V DS2 4 6 8 10 V 12 Fig. 3 Output characteristic, tp = 80 s, Tj = 25 C 0 VGS 2 4 6 V 8 Fig. 4 Transfer characteristic, tp = 80 s, VDS = 25 V M 253B020.XLS-6 M 253B020.XLS-5 300 16 A m 12 98% 200 typ. VGS>=10V 8 100 I=150A VGS=10V 4 RDS(on) ID 0 0 0 TJ 40 80 120 Fig. 5 On-resistance vs. temperature B 5 - 40 C 0 160 TCase 40 80 120 C 160 Fig. 6 Rated current vs. temperature 0898 (c) by SEMIKRON M253B 020.X L S -7 M253B 020.X L S -8 230 300 V V 220 200 210 200 100 190 V(BR)DSS VDS 180 0 -50 0 TJ 50 C 100 0 -di/dt 150 1 2 4 kA/s 3 5 Fig. 8 Drain-source voltage derating (LDS) Fig. 7 Breakdown voltage vs. temperature M253B 020.X L S -9 M253B 020.X L S -10 1000 16 nF V 14 ID=150A 12 100 10 Ciss VDS=40V 8 VDS=160V 6 10 Cos 4 Crs C VGS 2 1 0 0 VDS 10 20 40 V 30 0 50 Fig. 9 Typ. capacitances vs. drain-source voltage Qgls 0,5 1 1,5 mC 2 Fig. 10 Gate charge characteristic, IDp = 250 A M253B 020.X L S -11 M253B 020.X L S -14 5 300 A V 98% 4 125C 200 typ. 3 25C 2% 2 100 VDS=V GS ID=1mA 1 IF VGS(th) 0 0 0 VSD 1 2 V Fig. 11 Diode forward characteristic, t p = 80 s (c) by SEMIKRON -50 3 Tj 0 50 100 C 150 Fig. 14 Gate-source threshold voltage 0898 B 5 - 41 SKM 253 B 020 M253B 020.X LS-52 1 C/W D=1 0,1 0, 0,2 0,01 0,1 0,05 0,02 0,01 0,001 tp single pulse Zthjcp 0,0001 0,00001 0,0001 tp tc D=tp/tc =tp*f 0,001 0,01 0,1 s 1 Fig. 52 Thermal impedance under pulse conditions SEMITRANS M 3 Case D 56 SKM 253 B 020 Dimensions in mm B 5 - 42 0898 (c) by SEMIKRON