NDS351AN N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. * 1.4 A, 30 V. RDS(ON) = 160 m @ VGS = 10 V RDS(ON) = 250 m @ VGS = 4.5 V * Ultra-Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. * Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities * High performance trench technology for extremely low RDS(ON) D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed TJ, TSTG Units 30 V 20 V 1.4 A 10 Power Dissipation for Single Operation PD Ratings (Note 1a) 0.5 (Note 1b) 0.46 W -55 to +150 C (Note 1a) 250 C/W (Note 1) 75 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 351A NDS351AN 7'' 8mm 3000 units 2003 Fairchild Semiconductor Corporation NDS351AN Rev E(W) http://store.iiic.cc/ NDS351AN June 2003 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 A BVDSS Drain-Source Breakdown Voltage VGS = 0 V, BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 A,Referenced to 25C VDS = 24 V, 30 V 26 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55C IGSS Gate-Body Leakage On Characteristics VGS = 20 V, VDS = 0 V ID = 250 A mV/C 1 A 10 A 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 A,Referenced to 25C 0.8 2.1 -4 3 V 92 120 114 ID(on) On-State Drain Current VGS = 10 V, ID = 1.4 A VGS = 4.5 V, ID = 1.2 A VGS = 10 V, ID = 1.4 A, TJ = 125C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 1.4 A 4 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 145 pF 35 pF 15 pF mV/C 160 250 214 3.5 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 1.6 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 3 6 ns 8 16 ns (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 16 29 ns tf Turn-Off Fall Time 2 4 ns Qg Total Gate Charge 1.3 1.8 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, VGS = 4.5 V ID = 1.4 A, 0.5 nC 0.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD trr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 1.4 A, IS = 0.42 A (Note 2) diF/dt = 100 A/s 0.8 0.42 A 1.2 V 11 nS 4 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% NDS351AN Rev E(W) http://store.iiic.cc/ NDS351AN Electrical Characteristics NDS351AN Typical Characteristics 5 2.8 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V ID, DRAIN CURRENT (A) 6.0V 4 3 3.5V 2 1 3.0V 2.6 2.4 VGS = 3.5V 2.2 2 1.8 1.6 4.0V 4.5V 1.4 5.0V 1.2 6.0V 10V 1 0.8 0 0 0.5 1 1.5 0 2 1 2 Figure 1. On-Region Characteristics. 5 0.25 ID = 1.4A VGS = 10V ID = 0.7A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.225 0.2 0.175 TA = 125oC 0.15 0.125 0.1 TA = 25oC 0.075 0.6 -50 -25 0 25 50 75 100 125 3 150 4 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 5 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 3 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 4 3 2 TA = 125oC 1 25oC -55oC 0 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 2 2.5 3 3.5 4 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS351AN Rev E(W) http://store.iiic.cc/ NDS351AN Typical Characteristics 10 200 VGS, GATE-SOURCE VOLTAGE (V) ID =1.4A VDS = 10V 180 15V 8 CAPACITANCE (pF) 20V 6 4 140 120 100 2 80 60 COSS 40 20 CRSS 0 0 0 0.5 1 1.5 2 2.5 0 3 5 Qg, GATE CHARGE (nC) 15 20 25 30 Figure 8. Capacitance Characteristics. 100 5 P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100s 10 RDS(ON) LIMIT 1ms 10ms 100ms 1 1s VGS = 10V SINGLE PULSE RJA = 270oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 270C/W TA = 25C 4 3 2 1 0 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1 MHz VGS = 0 V CISS 160 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 RJA = 270 C/W o 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. NDS351AN Rev E(W) http://store.iiic.cc/ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 http://store.iiic.cc/