CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.95
0.92
-
-
dV/dt V/μs
R
θJC
R
θJA
T
JO
C
T
STG O
C
Document Number: DS_D1308048 Version: J13
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-220AC
Polarity: As marked
MBR735 thru MBR7150
Taiwan Semiconductor
Schottk
y
Barrier Rectifier
FEATURES
MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
TO-220AC
MBR
7100
MBR
7150 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 5 in-lbs maximum
Weight: 1.85 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current 7.5
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz) I
FRM
15
0.72
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
150 A
Peak repetitive reverse surge current (Note 1) 1 0.5
0.65 0.82
0.84
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5 A, T
J
=25℃
I
F
=7.5 A, T
J
=125℃
I
F
=15 A, T
J
=25℃
I
F
=15 A, T
J
=125℃
V
F
--
--
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
0.1
V
- 0.75 0.92
0.57
mA
15 10 5
Voltage rate of change (Rated V
R
)10000
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Typical thermal resistance 5
15
O
C/W
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +175
PART NO.
PART NO.
MBR760
MBR760
MBR760
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308048 Version: J13
MBR735 thru MBR7150
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
Note 1: "xx" defines voltage from 35V (MBR735) to 150V (MBR7150)
EXAMPLE
MBR7xx
(Note 1) Prefix "H" C0 Suffix "G" TO-220AC 50 / Tube
AEC-Q101 qualified
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBR760 C0 C0
RATINGS AND CHARACTERISTICS CURVES
MBR760 C0G C0 G Green compound
MBR760HC0 H C0
0
2
4
6
8
10
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
MBR735-MBR745
MBR750-MBR7150
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
TJ=75℃
TJ=125℃
TJ=25℃
MBR735-745
MBR750-7150
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
TJ=125℃
Pulse Width=300μs
1% Duty Cycle
TJ=25℃
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 0.00 1.60 0.000 0.063
H 13.19 14.79 0.519 0.582
I 4.95 5.20 0.195 0.205
J 4.42 4.76 0.174 0.187
K 1.14 1.40 0.045 0.055
L 5.84 6.86 0.230 0.270
M 2.20 2.80 0.087 0.110
N 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308048 Version: J13
MARKING DIAGRAM
MBR735 thru MBR7150
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
10
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION. (sec)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308048 Version: J13
MBR735 thru MBR7150
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
