General Purpose Transistors General Purpose Transistors FHT807-16/25/40 DESCRIPTION & FEATURES Excellent hFE Linearity hFE SOT-23 PIN ASSIGNMENT PIN NAME FUNCTION PIN NUMBER SOT-23 B 1 BASE E 2 EMITTER C 3 COLLECTOR MAXIMUM RATINGS(Ta=25) CHARACTERISTIC Symbol Rating Unit Collector-Emitter Voltage - -45 Vdc VCEO Collector-Base Voltage - VCBO -50 Vdc Emitter-Base Voltage - -5.0 Vdc VEBO Collector Current--Continuous - -500 mAdc IC THERMAL CHARACTERISTICS CHARACTERISTIC Symbol Max Unit Total Device Dissipation 225 mW FR-5 Board(1) (TA=25 =25) PD mW/ Derate above25 25 1.8 /W Thermal Resistance Junction to Ambient R JA 556 Total Device Dissipation Alumina Substrate,(2) TA=25 300 mW PD mW/ Derate above25 25 2.4 /W Thermal Resistance Junction to Ambient RJA 417 150 Tj, Junction and Storage Temperature -55 ~150 Tstg DEVICE MARKING FHT807-16=5A100~250FHT807-25=5B160~400FHT807-40=5C250~600 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Symbol Test Condition Min Type Max Unit Characteristic Collector Cutoff Current Collector-Emitter Breakdown Voltage (3) - ICBO VCB =-20Vdc -- V(BR)CEO Ic=-10 mAdc, IB=0 -45 Collector-Base Breakdown Voltage - V(BR)CBO Ic=-10Adc, IE=0 Emitter-Base Breakdown Voltage - V(BR)EBO DC Current Gain Collector-Emitter Saturation Voltage - hFE(1) hFE(2) V CE(sat) IE=-1.0Adc, IC=0 Ic=-100mAdc, VCE=-1.0Vdc Ic=-500mAdc, VCE=-1.0Vdc Ic=-500mAdc, IB=-50mAdc 1 -100 nAdc -- -- Vdc -50 -- -- Vdc -5.0 -- -- Vdc 100 -- 600 -- 40 -- -- -- -- -- -0.7 Vdc General Purpose Transistors General Purpose Transistors Base-Emitter On Voltage - V BE(on) Current-Gain-Bandwidth Product - fT Output Capacitance Cobo 1. 2. FR-5=1.0x0.75x0.062 in. Alumina=0.4x0.3x0.024 in. 99.5% alumina. 3. Pulse Width300s; Duty Cycle2.0%. FHT807-16/25/40 Ic=-500mAdc, VCE=-1.0Vdc Ic=-10mAdc, VCE=-5.0Vdc, f=100MHz VCB=-10Vdc,IE=0, f=1.0MHz 2 -- -- -1.2 Vdc 100 -- -- MHz -- -- 10 pF