Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions * Adoption of MBIT process. * High breakdown voltage and large current capacity. unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 1.0 1.0 1.0 4.5 6.9 4.0 1.0 0.6 0.5 0.9 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base SANYO : NMP ( ) : 2SA1770 2.54 Specifications 2.54 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)180 Collector-to-Emitter Voltage VCEO (-)160 V Emitter-to-Base Voltage VEBO IC (-)6 V Collector Current Colletor Current (Pulse) ICP PC Collector Dissipation Junction Temperature Tj Storage Temperature Tstg V (-)1.5 A (-)2.5 A 1 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Conditions ICBO IEBO VCB=(-)120V, IE=0 VEB=(-)4V, IC=0 hFE1 hFE2 VCE=(-)5V, IC=(-)100mA VCE=(-)5V, IC=(-)10mA fT VCE=(-)10V, IC=(-)50mA Ratings min typ 100* max Unit (-)1 A (-)1 A 400* 80 120 * ; The 2SA1770/2SC4614 are classified by 100mA hFE as follows : MHz Continued on next page. Rank R S T hFE 100 to 200 140 to 280 200 to 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578-1/4 2SA1770/2SC4614 Continued from preceding page. Parameter Symbol Output Capacitance Ratings Conditions Cob min VCB=(-)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage (-200) IC=(-)500mA, IB=(-)50mA Turn-ON Time ton See specified Test Circuit Storage Time tstg See specified Test Circuit tf See specified Test Circuit Fall Time Unit max (22)14 IC=(-)500mA, IB=(-)50mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 Collector-to-Base Breakdown Voltage typ pF (-500) mV 130 450 mV (-)0.85 (-)1.2 V (-)180 V (-)160 V (-)6 V (40)40 ns (0.7) s 1.2 s (40)80 ns Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT RB OUTPUT VR IB2 50 + 100F RL + 470F --5V 100V IC=10IB1= --10IB2= 0.7A For PNP, the polarity is reversed. IC -- VCE --1.8 --80mA A --60m A m --40 --1.4 --1.2 Collector Current, IC - A A --20m --10mA --5mA --1.0 --0.8 --0.6 --0.4 --2mA --0.2 --1mA 0 --1 --2 --3 --4 2mA 0.4 1mA IB=0 1 2 A Collector Current, IC - A --1.5mA --1.0mA --0.2 A 4.0m A 3.5m 3.0mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA IB=0 0 --10 --20 --30 5 ITR04572 2SC4614 4.5mA --0.5mA 0 4 IC -- VCE 1.0 0.8 --2.0mA 3 Collector-to-Emitter Voltage, VCE -V ITR04571 A --5.0m A .5 4 -- m A --4.0m --3.5mA --3.0mA --2.5mA --0.4 0.6 0 2SA1770 --0.6 10mA 5mA 0.8 0 IC -- VCE --0.8 1.0 --5 Collector-to-Emitter Voltage, VCE -V --1.0 1.2 0.2 IB=0 0 50mA 40mA 30mA 20mA 1.4 5. 0m Collector Current, IC - A 2SC4614 1.6 --1.6 Collector Current, IC - A IC -- VCE 1.8 2SA1770 --40 Collector-to-Emitter Voltage, VCE - V --50 ITR04573 IB=0 0 0 10 20 30 40 Collector-to-Emitter Voltage, VCE - V 50 ITR04574 No.3578-2/4 2SA1770/2SC4614 IC -- VBE --1.6 IC -- VBE 1.6 --1.2 --0.8 --0.4 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V 0 --25C 25C 7 5 1.0 1.2 ITR04576 hFE -- IC 2SC4614 VCE=5V Ta=75C 25C 3 2 --25C 100 7 5 3 2 2 10 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC - A ITR04577 f T -- IC 5 3 ITR04578 Cob -- VCB 100 2SA1770 / 2SC4614 2SA1770 / 2SC4614 7 Output Capacitance, Cob - pF 3 2SC4614 2 2SA1770 100 7 5 3 2 5 2SA 3 177 2 0 2SC 461 4 10 7 5 10 (For 0.01 PNP, minus sign is omitted.) 2 3 5 7 2 0.1 3 5 Collector Current, IC - A 7 3 (For 1.0 2 1.0 ITR04579 PNP, minus sign is omitted.) 2 3 VCE(sat) -- IC 7 2 10 3 7 5 3 2 C 25 --100 5C Ta=7 C --25 7 5 3 7 100 ITR04580 2SC4614 IC / IB=10 2 --1000 5 VCE(sat) -- IC 3 2SA1770 IC / IB=10 5 Collector-to-Base Voltage,VCB- V Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2 0.8 5 3 3 0.6 7 DC Current Gain, hFE Ta=75C 2 100 0.4 Base-to-Emitter Voltage, VBE - V 1000 5 3 0.2 ITR04575 2SA1770 VCE=--5V 7 DC Current Gain, hFE 0.4 --1.2 hFE -- IC 1000 Gain-Bandwidth Product, fT - MHz 0.8 0 0 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 1.2 Ta= 7 5 C 25C --25C Collector Current, IC - A 2SC4614 VCE=5V Ta= 75C 25C --25C Collector Current, IC - A 2SA1770 VCE=--5V 1000 7 5 3 2 100 25 7 C Ta=75C 5 C --25 3 2 2 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC - A 7 --1.0 2 3 ITR04581 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 3 ITR04582 No.3578-3/4 2SA1770/2SC4614 VBE(sat) -- IC --10 5 3 2 --1.0 Ta=--25C 7 75C 5 25C 3 5 3 2 1.0 Ta=--25C 7 75C 5 25C 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 7 0.01 s 1m DC 0.1 7 5 op era tio n 3 2 Ta=25C Single pulse For PNP, minus sign is omitted. 0.01 7 5 3 5 7 1.0 2 3 5 7 10 7 0.1 2 3 5 7 1.0 2 3 ITR04584 2SA1770 / 2SC4614 1.0 Collector Dissipation, PC - W 3 2 5 PC -- Ta 1.2 10 10m 0m s s 1.0 7 5 3 Collector Current, IC - A 2SA1770 / 2SC4614 ICP=2.5A IC=1.5A 3 2 2 ITR04583 ASO 5 Collector Current, IC - A 2SC4614 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) -V Base-to-Emitter Saturation Voltage, VBE (sat) -V 7 VBE(sat) -- IC 10 2SA1770 IC / IB=10 0.8 0.6 0.4 0.2 0 2 3 5 7 100 Collector-to-Emitter Voltage, VCE - V 2 3 ITR04585 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR04586 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.3578-4/4