AMERICAN POWER DEVICES S95E D M@@ 0737135 OOO0064 643 MAP) american Tt Power devices, inc. 1N4565-1N4584 1N4565A-1N4584A 500 mW temperature compensated zener reference diodes FEATURES MAXIMUM RATINGS *6.4 V stable references Junction Temperature: -65C to +200C * Guaranteed maximum %/c Storage Temperature: -65C to +200C *Hermetically sealed glass package + DC Power Dissipation: 500mW @ T,<S0C * Derate above 50C: 3.33mW/C These silicon devices are low-level, temperature compensated, zener reference diodes. Oxide-passivated junctions give them stability and make these diodes highly reliable reference sources. Glass-enclosed construction provides a rugged, hermetically sealed unit. ELECTRICAL CHARACTERISTICS @T,= 25C MECHANICAL CHARACTERISTICS 107 MAX 2.72 DIA o.o22 > oe OIA FIGURE 4 all dimensions In INCH mm CASE: Hermetically sealed glass package (DO-7) FINISH: Corrosion resistant. Leads are tin plated. THERMAL RESISTANCE: 250C/W (typ) junction to ambient, POLARITY: Cathode banded. WEIGHT: 0.2 grams (typ). This series also offered in DO-35 package. Consult factory tor availability. VOLTAGE TEMPERATURE MAX, DYNAMIC EFFECTIVE STABILITY ENER SEDEC ZENER TEST TEMPERATURE (Vz MAX) TEMPERATURE IMPEDANCE epee CURRENT COEFFICIENT fhote t RANGE (Note 1) mA FC mv 6 OHMS yNASES 5 01 48 Oto 75C 200 _INGSEBA 5 03 96 +5510 = 100 200 NA566 5 005 24 Dio+ 75C 200, 1N4566A 5 005 48 -55 to 300C 200 1N4567 5 002 10 Dto+ 75C 200 IN4SE7A 5 002 19 -5S to + 100C 200 1nagee 5 001 5 Oto* 75C 200 ING568A 5 001 9 -55 to 300C 200 1N4569 0005 25 Oto 75C 200 1N4569A 5 0005 5 -5$10 100C 200 1N4570 10 oO! 28 Oto 75C 100 1Na570A 10 ol 96 -55 10 +100C 100 1N4572 10 05 24 Oto+ 75C 100 ANAQS71A 10 Dos 4B -55 to +100C 100 1N4572 10 002 10 Oto+ 75C 100 1NAS72A 10 002 19 5510 #100C 100 1N4573 10 001 5 Oto 75C 400 1Na573A 10 ool 9 -55 to 100C 100 IN4574 10 0005 25 Owe 75C 100 1N4574A 10 0008 5 -55 10 *100C 100 1N4875 20 O1 48 Olo* 75C 50 1N4575A 20 ol 96 -55 to *100C 50 1N4576 20 05 "24 Oto 75C 50 1N4576A 20 005 48 -55 to 100C 50 1N4577 20 002 10 Dto> 75C $0 INa577A 20 002 19 -55 to +100C 50 1N4578 20 O08 5 Oto+ 75C 50 IN4578A 20 00} 3 -55 to +100C 50 IN4579 20 0005 25 Dw 75C 50 ING579A 20 0005 5 -55t0 +100C 50 _ 1N4580 20 7) 48 Oto+ 75C 25 E _1NaSB08 20 01 96 +55 to 100C 25 g 1N4S81 40 005 24 Dto* 75C 25 = IN4581A 0 005 4B -55 19 100C 25 : 1N4SB2_ ~ 0 002 40 Olo* 78C 25 5 1N45B24 40 002 19 -55 19 100C 35 3 1N4583 20 001 5 Dio> 75C 25 s INA5B3A 40 00} h 3 5510 100C 25 : } = 1N45B4 20 0005 25 Otor 75C 25 = INQ5B4A 20 0005 5 +5510 + 100C 25 ? < = s Note 1 The maximum allowable change over the entre temperature range. 1.e. the diade voltage wil} not exceed the specified mV at any discrete temperature between the established limits Note 2 The zener impedance is derived from the 60 Hz ac voliage, which resulls when an ac current having an rms value equal to 10% of the DC zener current (I__) is superimposed on ty. Zener impedance is measured al two porns to insure a sharp knee al breakdown thus eliminating unstable Gevices. ye LL ve Ty LEAG TEMPERATURE (8) Figure 2 POWER DERATING 69 bennet street. lvnn. ma 01905-3067 tel.: 617 592-6090 + fax: 617 592-0677AMERICAN POWER DEVICES. SSE D M@@ 0737135 O0000b5 7&T MHAPD " 4N4565-1N4584 american 1N4565A-1N4584A Penny power devices, inc. TYPICAL CHARACTERISTICS +0015 + 1N4565 i * N4570 1N4574 +0008 ~ 0085 Jd 4 4 4 a 3 4 3B 4 Lo 1s OPERATING CURRENT I2z7 (mA) OPERATING CURRENT iz (mA) ay! : : soe . + 7 4N@5751N4579 1N4580 1Na584 CHANGE IN TEMPERATURE COEFFICIENT (%7C) 45 200035 300 35 ce. 1 30 OPERATING CURRENT Iz1 (mA) OPERATING CURRENT Iz (mA) Figure 3 CHANGE OF TEMPERATURE COEFFICIENT VERSUS CHANGE IN OPERATING CURRENT 50 ZENER IMPEDANCE 271 (OHMS) Ss ZENER IMPEDANCE Zz: (OHMS) 50 i t > ' ' ! i 10 = - i Do a %5 10 1S 20 28 30 38 10 70 30 40 So) O68 OPERATING CURRENT tz? (mA) OPERATING CURRENT I77 (mA) Figure 4 CHANGE OF ZENER IMPEDANCE VERSUS CHANGE IN OPERATING CURRENT 69 bennett street, lynn, ma 01905-3067 = 1el.: 617 592-6090 fax: 617 592-0677