SCHOTTKY DETECTOR DIODES MSS 20,000 SERIE ERO BI r | P S 20,00 S ZERO BIAS ws mater tetas CORPORATION FEATURES e No DC Bias Required e Low I/F Noise Detectors to 40 GHz e Packages, Chips, or Beam Leads Available TINGS MAXIMUM RA a4 jbo Operating Temperature ............. -65C to + 150C mS == Storage Temperature ............... -65C to + 150C CW Power Dissipation ................00006- 100 mW (derated to zero at + 150C) =f of 1. Soldering Temperature.............. + 230C for 5 sec. CHIP & PACKAGE: ELECTRICAL SPECIFICATIONS AT 25C Tangential Video vodeL-Case ct Seneivity mpenanee Senevity fetid Style* (pF) (dBm) (Ohms) (mV/mW) (GHz) MAX TYP MIN MAX TYP MAX MSS20, 046-C15 0.10 -58 1000 - 2000 5000 18 | MSS20, 046-H27 0.22 -58 1000 - 2000 5000 18 MSS20, 046-E26 0.18 -58 1000 ~ 2000 5000 18 MSS20, 046-786 0.28 -58 1000 - 2000 5000 18 MSS20, 047-C15 0.10 -59 2000 - 6000 8000 18 MSS20, 047-H27 0.22 -59 2000 - 6000 8000 18 MSS20, 047-E26 0.18 -59 2000 - 6000 8000 18 MSS20, 047-T86 0.28 -59 2000 - 6000 8000 18 MSS20, 050-C15 0.15 -58 1000 - 2000 5000 12 MSS20, 050-H27 0.27 -58 1000 - 2000 5000 12 _ MSS20, 050-E26 0.23 -58 1000 - 2000 5000 12 = MSS20, 050-T86 0.33 -58 1000 - 2000 5000 12 <= MSS20, 051-C15 0.15 -59 2000 - 6000 8000 12 -_ MSS20, 051-H27 0.27 -~59 2000 - 6000 8000 12 on MSS20, 051-E26 0.23 -59 2000 - 6000 8000 12 MSS20, 051-T86 0.33 -59 2000 - 6000 8000 12 = MSS20, 054-C15 0.20 -58 4000 2000 5000 8 = MSS20, 054-H27 0.32 -58 1000 - 2000 5000 8 MSS20, 054-E26 0.28 -58 1000 - 2000 5000 8 MSS20, 054-T86 0.38 -58 1000 - 2000 5000 8 MSS20, 055-C15 0.20 -59 2000 - 6000 8000 8 MSS20, 055-H27 0.32 -59 2000 - 6000 8000 8 MSS20, 055-E26 0.28 -59 2000 - 6000 8000 8 MSS20, 055-T86 0.38 -59 2000 - 6000 8000 8 Test = 1 MHz f = 10 GHz Pin = -30 dBm Conditions Va at G = Os NF = 3dB Video BW = 500 KHz RL = 1 Mohm *See Outiine Drawings. Other Packages Available. Date: 3-1-90State-of-the-Art Microwave Diodes DESCRIPTION The Metelics MSS20, 000 Series zero bias Schottky detector microstrip, or hybrid useage. diodes are P-Type with silicon oxide passivation. They are intended for use as zero-bias detector devices from 0.1 GHz to The beam-lead types are provided with short beams for low as high as 40 GHz. Packages are available for coax, waveguide, inductance and tuning nearer the junction. BEAM LEAD DIODES: ELECTRICAL SPECIFICATIONS AT 25C Tangential Video Sensi . ct Sensitivity Impedance ensitivity eoueney Model-Case Tss Rv Style (pF) (dBm) (Ohms) (mV/mW) (GHz) MAX TYP MIN MAX TYP MAX MSS20, 140-B10D 0.08 -58 1000 - 2000 5000 40 MSS20, 141-B10D 0.08 -59 2000 - 6000 8000 40 MSS20, 142-B10D 0.10 -58 1000 - 2000 5000 26 MSS20, 143-B10D 0.10 -59 2000 - 6000 8000 26 MSS20, 145-B10D 0.12 ~58 1000 ~ 2000 5000 18 MSS20, 146-B10D 0.12 -59 2000 ~ 6000 8000 18 Test f = 1MHz f = 10 GHz Piy = -30 dBm Conditions Vg atG = Os NF = 3dB Video BW = 500 KHz RL = 1 Mohm ZERO BIAS SCHOTTKY DETECTOR ZERO BIAS SCHOTTKY DETECTOR TRANSFER CHARACTERISTICS VIDEO RESISTANCE vs. POWER 1V : 3000 High y LZ 2000 iN 100 mV yf > IN & W~ Low E 1000 NS 2 10mv o z 8 3 2 500 N Ss imv 4 $ a 300 g N Amv If f = 10 GHz, f = 10 Ghz, Tuned, RL = t Mohm Tuned at -30 dBm .01 mV 100 1 1 -60 -40 -20 0 +20 -60 -50 -40 -30-20 -10 0 +10 Power (dBm) RF Input Power (dBm) TYPICAL ZERO BIAS SCHOTTKY OUTLINE DRAWINGS DETECTOR OUTPUT vs. TEMPERATURE PACKAGE OUTLINE B10D PACKAGE OUTLINE C15 Ry = 2 Kohms @ +1 zB =e 5 0 coi BASE OF CHIP 3s N co.npan ANODE oo > \ ANODE tb - LEAD 2 * 4 < Efe +s Oo \ SCHEMATIC yy a 4 T F \ . gages 3 $e -50 0 +50 +100 +150 Temperature (C) Cp = .015 pF Lp = 1nH Dimension in mils