1C6D10065E Rev. A, 05-2020
C6D10065E
Silicon Carbide Schottky Diode
Z-Rec® 
Features
• New 6th Generation Technology
• Low Forward Voltage Drop (VF)
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• Low Leakage Current (Ir)
• Temperature-Independent Switching Behavior
• F
Benets
• 
• Increase System Power Density
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Server/Telecom Power Supplies
• Industrial Power Supplies
• Solar
• UPS
Package
TO-252-2
Maximum Ratings (TC = 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
650 V
IFContinuous Forward Current
35
18
10
A
TC
TC
TC
Fig. 3
IFRM Repetitive Peak Forward Surge Current
41
24
ATCP 
TCP 
IFSM Non-Repetitive Peak Forward Surge Current
78
68
ATCP 
TCP  Fig. 8
IF,Max Non-Repetitive Peak Forward Surge Current 1100
1000 ATCP 
TCP  Fig. 8
Ptot Power Dissipation
99
43 WT
C

T
C

Fig. 4
TJ , Tstg Operating Junction and Storage Temperature
-55 to
+175 
Part Number Package Marking
C6D10065E TO-252-2 C6D10065
VRRM = 650 V
IF (TC=155˚C) = 10 A
Qc = 34 nC
PIN 1
PIN 2 CASE
2C6D10065E Rev. A, 05-2020
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.27
1.37
1.50
1.60 VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C Fig. 1
IRReverse Current 2
15
50
200 μA VR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 34 nC VR = 400 V, TJ = 25°C Fig. 5
CTotal Capacitance
611
67
53
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 5.2 μJ VR = 400 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 1.51 °C/W Fig. 9
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
IF (A)
VF (V)
IR (mA)
VR (V)
0
2
4
6
8
10
12
14
16
18
20
0.50 0.75 1.00 1.25 1.50 1.75 2.00
Foward Current, I
F
(A)
Foward Voltage, V
F
(V)
TJ= -55°C
TJ= 25°C
TJ= 75°C
TJ= 175°C
TJ= 125°C
IF (A)
VF (V)
0
20
40
60
80
100
0100 200 300 400 500 600 700 800
Reverse Leakage Current, I
RR
(uA)
Reverse Voltage, V
R
(V)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
TJ= -55 °C
TJ= 25 °C
IR (mA)
VR (V)
3C6D10065E Rev. A, 05-2020
Figure 3. Current Derating Figure 4. Power Derating
6
8
10
12
14
0
2
4
25 50 75 100 125 150 175
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
4
6
8
10
12
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
2
4
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
60
80
100
120
140
160
180
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
20
40
60
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
IF(peak) (A)
PTot (W)
TC ˚C
QC (nC)
VR (V)
C (pF)
TC ˚C
IF(peak) (A)
PTot (W)
TC ˚C
C (pF)
VR (V)
0
20
40
60
80
100
120
25 50 75 100 125 150 175
I
F(A)
TC(°C)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
IF(peak) (A)
TC ˚C
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
P
TOT
(W)
TC(°C)
PTot (W)
TC ˚C
QC (nC)
VR (V)
Conditions:
Vtest = 25 mV
C (pF)
VR (V)
4C6D10065E Rev. A, 05-2020
Typical Performance
Figure 7. Capacitance Stored Energy
Figure 9. Transient Thermal Impedance
Thermal Resistance (˚C/W)
T (Sec)
Thermal Resistance (˚C/W)
T (Sec)
Thermal Resistance (˚C/W)
T (Sec)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (Sinusoidal Waveform)
0
2
4
6
8
10
12
14
0100 200 300 400 500 600 700
Capacitance Stored Energy, E
C
(mJ)
Reverse Voltage, V
R
(V)
EC(mJ)
VR (V)
10
100
1,000
10E-6 100E-6 1E-3 10E-3
I
FSM
(A)
Time, t
p
(s)
TJ_initial = 25 °C
TJ_initial = 110 °C
IFSM (A)
tp (s)
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C6D10065E Rev. A, 05-2020
Recommended Solder Pad Layout
Part Number Package Marking
C6D10065E TO-252-2 C6D10065
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Package Dimensions
Package TO-252-2
Tjb June 2015
MX+DI+PSI
TO-252-2
SYMBOL
MILLIMETERS
MIN
MAX
A
2.159
2.413
A1
0
0.13
b
0.64
0.89
b
2
0.653
1.143
b
3
5.004
5.6
c
0.457
0.61
c2
0.457
0.864
D
5.867
6.248
D1
5.21
-
E
6.35
6.73
E1
4.32
-
e
4.58 BSC
H
9.65
10.414
L
1.106
1.78
L2
0.51 BSC
L3
0.889
1.27
L4
0.64
1.01
Ɵ
0°
8°
66 C6D10065E Rev. A, 05-2020
Copyright © 2020 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/power/tools-and-support/product-ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air trac control systems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Related Links