MOTOROLA SC {DIODES/OPTO} _ 34 DEPese7ess oozaess 2 Of 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38255 D | SOT23 (continued) 7-29-17 pevice No. BCW66F,G,H SMALL-SIGNAL NPN TRANSISTOR top VIEW [] Designed for low-frequency driver stage and switching | applications. | LI LI B E MAXIMUM RATINGS : Device Marking Rating Symbol Value Unit BCW66F EF Collector-Emitter Voltage Voce 45 Vde BCW66G. EG Collector-Base Voltage Veso 75 Vde BCW66H EH Emitter-Base Voltage Ves 5.0 Vde Collector Current Is 800 mAdc ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Parameter Test Conditions Min Typ Max | Unit BV ceo Io = 10 mAde, lp =0 45 _ _ Vde BVeao | le = 10 pAde, Ip = 0 5.0 _ | Vde BV ces lo = 10 wAdc, Vep =0 75 _ _ Vde logs Voge = 45 Vde, Ip = 0 _ - 20 nAde Vee = 45 Vde, Io = 0, Ty = 150C _ 20 pAdc lego Ves = 4.0 Vde, lo =0 _ _ 20 nAdc hee Io = 100 pAde, Vog = 1.0 Vde - BCW66F 35 _ _ _ BCW66G 50 _ BCW66H 80 _ _ Io = 10 mAde, Vog = 1.0 Vde BCW66F 75 _ _ BCW66G | 110 _~ _ BCW66H 180 _ _ Ig = 100 mAde, Veg = 1.0 Vde BCWE66F 100 _ 250 BCW66G | 160 _ 400 BCWE66H | 250 _ 630 Ig = 500 mAdc, Vog = 2.0 Vde BCW66F 35 _ BCW66G 60 _ _ BCW66H 100 _ _ Veetest) Io = 500 mAdc, lp = 50 mAdc _ 0.7 _ Vde Ig = 100 mAdc, I, = 10 mAde _ 0.3 _ continued 15-18 eee we eee ee eee ep I cyepnttht ie eSMOTOROLA SC {DIODES/OPTO} ay dE Peaezess oozsash 4 Ef 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38256 D $OT23 (continued) BCW66F,G,H (continued) T= 29-19 Parameter Test Conditions Min Typ Max Unit Voges) | Ic = 500 mAde, Ip = 50 mAdc _ _ 2.0 Vide f; Io = 20 mAdc, Vog = 10 Vde, f = 100 MHz 100 _ | Mrz : Con Von = 10 Vdo, Ip = 0, f = 1.0 MHz _ 12 pF i Cy | Veg = 0.5 Vo, Ig = 0, f = 1.0 MHz | | 80 | oF NF lo = 0.2 mAdc, Voz = 5.0 Vde, Ag = 1.0 kf, _ 10 dB f = 1.0 kHz, BW = 200 Hz ton ls: = ig2 = 15 mAdc _ _- 100 ns tort lo = 150 mAdc, R, = 150 2 _ _ 400 ns Se hn 15-19