VTP Process Photodiodes VTP6060 PACKAGE DIMENSIONS inch (mm) CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .032 in2 (20.6 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, pages 45-46) VTP6060 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. Typ. Max. 120 200 A .20 %/C Short Circuit Current H = 100 fc, 2850 ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/C Dark Current H = 0, VR = 50 V RSH Shunt Resistance H = 0, V = 10 mV ISC TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 15 V Re Responsivity 940 nm SR Sensitivity @ Peak 35 nA 100 G 60 pF A/(W/cm2) .14 .55 A/W range Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 45 Degrees NEP Noise Equivalent Power 1.9 x 10-13 (Typ.) Specific Detectivity 2.3 x 10 12 (Typ.) W Hz cm Hz W D* Excelitas Technologies, 10900 Page Ave., St. Louis, MO 63132 USA 400 50 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.excelitas.com 57