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VTP Process Photodiodes VTP6060
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. Cathode is
common to the case. These d iodes exhib it low
dark current under reverse bias and fast speed
of response.
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .032 in
2
(20.6 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St orage Tem perat ure: -40°C to 110° C
Oper ati ng Temp er atur e: -4 0°C to 110°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTI C TEST CONDIT IONS VTP6060 UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 28 50 120 200 µA
TC ISC ISC Temperature Coefficient 2850 K .20 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 350 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 50 V 35 nA
RSH Shunt Resistance H = 0, V = 10 mV 100 GΩ
CJJunction Capacitance H = 0, V = 15 V 60 pF
Re Responsivity 940 nm .14 A/(W/cm2)
SRSensitivity @ Peak .55 A/W
λrange Spectral Application Range 400 1150 nm
λpSpectral Respo nse - Peak 925 nm
VBR Breakdown Voltage 50 140 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±45 Degrees
NEP Noise Equiv alent Power 1.9 x 10-13 (Typ.)
D* Specif ic Detectivit y 2.3 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
Excelitas Technologies, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.excelitas.com
