Semiconductor Group 1 Sep-12-1996
BSP 299
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
V
GS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 299 500 V 0.4 A 4 SOT-223 BSP 299
Type Ordering Code Tape and Reel Information
BSP 299 Q67000-S225 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
A = 44 °C
I
D 0.4 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls 1.6
Avalanche energy, single pulse
I
D = 1.2 A,
V
DD = 50 V,
R
GS = 25
L
= 163 mH,
T
j = 25 °C
E
AS
130
mJ
Gate source voltage
V
GS ± 20 V
Power dissipation
T
A = 25 °C
P
tot 1.8 W
Semiconductor Group 2 Sep-12-1996
BSP 299
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA 70 K/W
Therminal resistance, junction-soldering point 1)
R
thJS 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 0 °C
V
(BR)DSS 500 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 500 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 500 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
- 10
0.1 100
1 µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 0.4 A
R
DS(on) - 3.5 4
Semiconductor Group 3 Sep-12-1996
BSP 299
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS 2 *
I
D *
R
DS(on)max,
I
D = 0.4 A
g
fs 0.3 1.2 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 300 400 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 40 60
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 15 25
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.3 A
R
GS = 50
t
d(on)
- 8 12
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.3 A
R
GS = 50
t
r
- 15 22
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.3 A
R
GS = 50
t
d(off)
- 55 70
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.3 A
R
GS = 50
t
f
- 30 40
Semiconductor Group 4 Sep-12-1996
BSP 299
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 0.4 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - 1.6
Inverse diode forward voltage
V
GS = 0 V,
I
F = 0.8 A,
T
j = 25 °C
V
SD - 0.9 1.2 V
Reverse recovery time
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 300 - ns
Reverse recovery charge
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 2.5 - µC
Semiconductor Group 5 Sep-12-1996
BSP 299
Power dissipation
P
tot = ƒ(
T
A)
020 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS10 V
020 40 60 80 100 120 °C 160
T
A
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
A
0.45
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25°C Transient thermal impedance
Z
th JA = ƒ(
t
p)
parameter:
D = t
p /
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 Sep-12-1996
BSP 299
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs ,
T
j = 25 °C
0 2 4 6 8 10 12 V 16
V
DS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
A
0.9
I
D
V
GS [V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 2W
l 20.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.00 0.10 0.20 0.30 0.40 A 0.60
I
D
0
1
2
3
4
5
6
7
8
9
10
11
13
R
DS (on)
V
GS [V] =
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
l
20.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
012345678V10
V
GS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
A
2.6
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
0.0 0.4 0.8 1.2 1.6 A 2.2
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
S
2.6
g
fs
7 Sep-12-1996
Semiconductor Group
BSP 299
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 0.4 A,
V
GS = 10 V
-60 -20 20 60 100 °C 160
T
j
0
1
2
3
4
5
6
7
8
10
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0 5 10 15 20 25 30 V 40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
iss
C
oss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-2
10
-1
10
0
10
1
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 Sep-12-1996
BSP 299
Avalanche energy
E
AS = ƒ(
T
j)
parameter:
I
D = 1.2 A,
V
DD = 50 V
R
GS = 25 ,
L
= 1 6 3 mH
20 40 60 80 100 120 °C 160
T
j
0
10
20
30
40
50
60
70
80
90
100
110
120
mJ
140
E
AS
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
450
460
470
480
490
500
510
520
530
540
550
560
570
580
V
600
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25°C
Semiconductor Group 9 Sep-12-1996
BSP 299
Package outlines
SOT-223
Dimensions in mm