
Semiconductor Group 2 Sep-12-1996
BSP 299
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1)
R
thJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 0 °C
V
(BR)DSS 500 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 500 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 500 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
- 10
0.1 100
1 µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 0.4 A
R
DS(on) - 3.5 4 Ω