VUO28-12NO7
3~ Rectifier Bridge
Standard Rectifier Module
K N DH A
Part number
VUO28-12NO7
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
ECO-PAC1
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
RRM
1200
I30
FSM
120
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130322aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO28-12NO7
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.20
R2.5 K/W
R
min.
30
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
mA0.7V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
50 WT = 25°C
C
RK/W0.4
10
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.61
T = 25°C
VJ
150
V
F0
V0.84T = °C
VJ
150
r
F
28.8 mΩ
V1.14T = °C
VJ
I = A
F
V
10
1.68
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
4
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
120
130
50
50
A
A
A
A
100
110
72
70
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20130322aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO28-12NO7
Ratings
XXX XX-XXXXX
YYCW Lot#
Made in Germany
Circuit Diagram
Part Number Date Code
Logo
Package
T
VJ
°C
M
D
Nm2
mounting torque 1.5
T
stg
°C125
storage temperature -40
Weight g19
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
ECO-PAC1
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO28-12NO7 479632Box 25VUO28-12NO7Standard
2500
3000
ISOL
threshold voltage V0.84
mΩ
V
0 max
R
0 max
slope resistance * 27.6
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130322aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO28-12NO7
K N DH A
Outlines ECO-PAC1
IXYS reserves the right to change limits, conditions and dimensions. 20130322aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO28-12NO7
011
10
100
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
10
-3
10
-2
10
-1
10
0
40
60
80
100
1 10 100 1000 10000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150 175051015
0
10
20
30
0 25 50 75 100 125 150
0
10
20
30
40
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 1.359 0.1015
20.3286 0.1026
30.1651 0.4919
40.6473 0.62
0.8 x V
RRM
50 Hz
T
VJ
=45°C T
VJ
=45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C T
VJ
=25°C
T
VJ
=150°C
T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
g
. 6 Transient thermal im
p
edance
j
unction to case vs. time
p
er diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130322aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
