1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
801.11.2003
BC 556 ... BC 559 General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Power dissipation – Verlustleistung 500 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 556 BC 557 BC 558/559
Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V
Collector-Base-voltage E open - VCB0 80 V 50 V 30 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 500 mW 1)
Collector current – Kollektorstrom (DC) - IC100 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 55…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 2 mA hFE 110...220 200...460 420...800
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung hfe typ. 220 typ. 330 typ. 600
Input impedance – Eingangsimpedanz hie 1.6...4.5 kS3.2...8.5 kS6...15 kS
Output admittance – Ausg.-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 100 mA, - IB = 5 mA -VCEsat – – 300 mV
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
9
01.11.2003
General Purpose Transistors BC 556 ... BC 559
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung
- IC = 100 mA, - IB = 5 mA - VBEsat – – 1 V
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 5 V, - IC = 2 mA - VBE 580 mV 660 mV 700 mV
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 60 V BC 556 - ICE0 – – 0.1 :A
- VCE = 40 V BC 557 - ICE0 – – 0.1 :A
- VCE = 25 V BC 558 - ICE0 – – 0.1 :A
- VCE = 25 V BC 559 - ICE0 – – 0.1 :A
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz fT150 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – – 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, f = 1 MHz CEB0 – 9 pF –
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A BC 556... F – 2 dB 10 dB
RG = 2 kS f = 1 kHz, BC 558
)f = 200 Hz BC 559 F – 1 dB 4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC 546 ... BC 549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C
